SPDT analog switches designed for low voltage applications.
The DG2535/DG2536 has on-resistance matching (less than
0.05
Ω
at 2.7 V) and flatness (less than 0.2
Ω
at 2.7 V) that are
guaranteed over the entire voltage range. Additionally, low
logic thresholds make the DG2535/DG2536 an ideal interface
to low voltage DSP control signals.
The DG2535/DG2536 has fast switching speed with
break-before-make guaranteed. In the On condition, all
switching elements conduct equally in both directions.
Off-isolation and crosstalk is - 69 dB at 100 kHz.
The DG2535/DG2536 is built on Vishay Siliconix’s
high-density low voltage CMOS process. An eptiaxial layer is
built in to prevent latchup. The DG2535/DG2536 contains the
additional benefit of 2,000 V ESD protection.
In space saving MSOP-10 and DFN-10 lead (Pb)-free
packages, the DG2535/DG2536 are high performance, low
r
ON
switches for battery powered applications. No lead (Pb) is
used in the manufacturing process either inside the device/
package or on the external terminations. As a committed
partner to the community and the environment, Vishay
Siliconix manufactures this product with the lead (Pb)-free
device terminations. For analog switching products
manufactured in DFN packages, the lead (Pb)-free "-E3/E4"
suffix is being used as a designator. Lead (Pb)-free DFN
products purchased at any time will have either a
nickel-palladium-gold device termination or a 100 % matte tin
device termination. The different lead (Pb)-free materials are
interchangeable and meet all JEDEC standards for reflow and
MSL rating.
FEATURES
•
•
•
•
•
•
Low Voltage Operation
Low On-Resistance - r
ON
: 0.35
Ω
at 2.7 V
- 69 dB OIRR at 2.7 V, 100 kHz
MSOP-10 and DFN-10 Packages
ESD Protection > 2000 V
Latch-Up Current > 300 mA (JESD 78)
RoHS
COMPLIANT
BENEFITS
•
•
•
•
•
Reduced Power Consumption
High Accuracy
Reduce Board Space
1.8 V Logic Compatible
High Bandwidth
APPLICATIONS
•
•
•
•
•
•
Cellular Phones
Speaker Headset Switching
Audio and Video Signal Routing
PCMCIA Cards
Battery Operated Systems
Relay Replacement
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2535
V+
NO1
COM1
IN1
NC1
1
2
3
4
5
Top View
10
9
8
7
6
NO2
COM2
IN2
NC2
GND
TRUTH TABLE
Logic
0
1
NC1 and NC2
ON
OFF
NO1 and NO2
OFF
ON
DG2536
V+
NC1
COM1
IN1
NO1
1
2
3
4
5
Top View
10
9
8
7
6
NC2
COM2
IN2
NO2
GND
ORDERING INFORMATION
Temp Range
Package
MSOP-10
- 40 to 85 °C
DFN-10
Part Number
DG2535DQ-T1-E3
DG2536DQ-T1-E3
DG2535DN-T1-E4
DG2536DN-T1-E4
Document Number: 72939
S-71009-Rev. E, 14-May-07
www.vishay.com
1
DG2535/DG2536
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Referenced V+ to GND
IN, COM, NC, NO
a
Continuous Current (NO, NC, COM)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature (D Suffix)
ESD per Method 3015.7
Power Dissipation (Packages)
b
MSOP-10
c
DFN-10
d
Limit
- 0.3 to + 6
- 0.3 to (V+ + 0.3)
± 300
± 500
- 65 to 150
>2
320
1191
Unit
V
mA
°C
kV
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4.0 mW/°C above 70 °C
d. Derate 14.9 mW/°C above 70 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, V
IN
= 0.5 or 1.4 V
e
Limits
- 40 to 85 °C
Temp
a
Min
b
Typ
c
Max
b
Unit
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
r
ON
Flatness
d
On-Resistance
Match Between Channels
d
Switch Off
Leakage Current
Channel-On
Leakage Current
Digital Control
Input High Voltage
d
Input Low Voltage
Input Capacitance
Input Current
Symbol
V
NO
, V
NC
V
COM
r
ON
r
ON
Flatness
Δr
DS(on)
I
NO(off)
I
NC(off)
I
COM(off)
I
COM(on)
Full
Room
Full
V+ = 2.7 V, V
COM
= 0.6 V/1.5 V, I
NO
, I
NC
= 100 mA
Room
Room
Room
Full
Room
Full
Room
Full
Full
Full
Full
V
IN
= 0 or V+
Full
0
0.35
0.09
V+
0.5
0.6
0.2
0.05
V
Ω
V+ = 3.3 V
V
NO
, V
NC
= 0.3 V/3 V, V
COM
= 3 V/0.3 V
V+ = 3.3 V, V
NO
, V
NC
= V
COM
= 0.3 V/3 V
-1
- 10
-1
- 10
-1
- 10
1.4
1
10
1
10
1
10
nA
V
INH
V
INL
C
in
I
INL
or I
INH
0.5
10
1
1
V
pF
µA
www.vishay.com
2
Document Number: 72939
S-71009-Rev. E, 14-May-07
DG2535/DG2536
Vishay Siliconix
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, V
IN
= 0.4 or 2.0 V
e
Limits
- 40 to 85 °C
Temp
a
Room
Full
V
NO
or V
NC
= 2.0 V, R
L
= 50
Ω,
C
L
= 35 pF
Room
Full
Full
C
L
= 1 nF, V
GEN
= 1.5 V, R
GEN
= 0
Ω
R
L
= 50
Ω,
C
L
= 5 pF, f = 100 kHz
V
IN
= 0 or V+, f = 1 MHz
V
IN
= 0 or V+, f = 1 MHz
Room
Room
Room
Room
Room
Room
Room
Full
1
Min
b
Typ
c
52
43
6
21
- 69
- 69
145
145
406
406
1.0
µA
pF
pC
dB
Max
b
82
90
73
78
ns
Unit
Parameter
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
d
Off-Isolation
d
Crosstalk
d
N
O
, N
C
Off Capacitance
d
Channel-On Capacitance
d
Power Supply
Power Supply Current
Symbol
t
ON
t
OFF
t
d
Q
INJ
OIRR
X
TALK
C
NO(off)
C
NC(off)
C
NO(on)
C
NC(on
I+
V
IN
= 0 or V+
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
Document Number: 72939
S-71009-Rev. E, 14-May-07
www.vishay.com
3
DG2535/DG2536
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.7
0.6
r
ON
- On-Resistance (Ω)
0.5
0.4
0.3
0.2
0.1
0.0
0.0
V+ = 3.3 V
V+ = 1.8 V
V+ = 2.0 V
V+ = 2.7 V
V+ = 3.0 V
T = 25
°C
I
A
= 100 mA
r
ON
- On-Resistance (Ω)
0.8
0.7
0.6
0.5
85
°C
0.4
25
°C
0.3
0.2
0.1
0.0
0.0
- 40
°C
V+ = 3.0 V
I
S
= 100 mA
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.5
1.0
1.5
2.0
2.5
3.0
V
COM
- Analog Voltage (V)
V
COM
- Analog Voltage (V)
r
ON
vs. V
COM
and Supply Voltage
100000
V+ = 3.0 V
V
IN
= 0 V
I+ - Supply Current (A)
100 mA
10 mA
1 mA
100 µA
10 µA
1 µA
100 nA
10 nA
10
1 nA
r
ON
vs. Analog Voltage and Temperature (NC1)
V+ = 3 V
10000
I+ - Supply Current (nA)
1000
100
10
Temperature (°C)
100
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
Supply Current vs. Temperature
10000
V+ = 3.0 V
I
COM(on)
1000
Leakage Current (pA)
Leakage Current (pA)
I
COM(off)
100
300
250
200
150
100
50
0
- 50
- 100
- 150
- 200
- 250
1
- 60
- 40
- 20
0
20
40
60
80
100
Supply Current vs. Input Switching Frequency
V+ = 3.0 V
I
COM(on)
I
NO(off)
, I
NC(off)
I
NO(off)
, I
NC(off)
10
I
COM(off)
- 300
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Temperature (°C)
V
COM
- Analog Voltage (V)
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
www.vishay.com
4
Document Number: 72939
S-71009-Rev. E, 14-May-07
DG2535/DG2536
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
90
t
ON
/ t
OFF
- Switching Time (ns)
80
70
60
50
40
30
20
10
0
- 60
- 90
100 K
1M
10 M
Frequency (Hz)
100 M
1G
t
OFF
V+ = 2 V
t
OFF
V+ = 3 V
t
ON
V+ = 3 V
t
ON
V+ = 2 V
- 10
Loss, OIRR, X
TALK
(dB)
Loss
10
- 30
X
TA LK
OIRR
- 50
V+ = 3.0 V
R
L
= 50
Ω
- 70
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Switching Time vs. Temperature
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
300
250
200
Q - Charge Injection (pC)
2.00
1.75
- Switching Threshold (V)
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0
1
2
3
4
5
6
V+ - Supply Voltage (V)
150
100
50
0
- 50
- 100
- 150
- 200
- 250
- 300
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V+ = 3.0 V
V+ = 2.0 V
V
T
V
COM
- Analog Voltage (V)
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
TEST CIRCUITS
V+
Logic
Input
V+
Switch
Input
NO or NC
IN
Logic
Input
GND
0V
C
L
(includes fixture and stray capacitance)
V
OUT
= V
COM
R
L
R
L
+ R
ON
Logic "1" = Switch On
Logic input waveforms inverted for switches that have
