DG417/418/419
Precision CMOS Analog Switches
Features
D
D
D
D
D
D
D
"15-V
Analog Signal Range
On-Resistance—r
DS(on)
: 20
W
Fast Switching Action—t
ON
: 100 ns
Ultra Low Power Requirements—P
D
:35 nW
TTL and CMOS Compatible
MiniDIP and SOIC Packaging
44-V Supply Max Rating
Benefits
D
Wide Dynamic Range
D
Low Signal Errors and Distortion
D
Break-Before-Make
Switching Action
D
Simple Interfacing
D
Reduced Board Space
D
Improved Reliability
Applications
D
D
D
D
D
D
Precision Test Equipment
Precision Instrumentation
Battery Powered Systems
Sample-and-Hold Circuits
Military Radios
Guidance and Control
Systems
D
Hard Disk Drives
Description
The DG417/418/419 monolithic CMOS analog switches
were designed to provide high performance switching of
analog signals. Combining low power, low leakages, high
speed, low on-resistance and small physical size, the
DG417 series is ideally suited for portable and battery
powered industrial and military applications requiring high
performance and efficient use of board space.
To achieve high-voltage ratings and superior switching
performance, the DG417 series is built on Siliconix’s high
voltage silicon gate (HVSG) process. Break-before-make is
guaranteed for the DG419, which is an SPDT configuration.
An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions
when on, and blocks up to the power supply level when
off.
The DG417 and DG418 respond to opposite control logic
levels as shown in the Truth Table.
Functional Block Diagram and Pin Configuration
DG417
Dual-In-Line and SOIC
S
NC
GND
V+
1
2
3
4
Top View
8
7
6
5
D
V–
IN
V
L
Truth Table
Logic
0
1
DG417
ON
OFF
DG418
OFF
ON
Logic “0” =
v
0.8 V, Logic “1” =
w
2.4 V
DG419
Dual-In-Line and SOIC
D
S
1
GND
V+
1
2
3
4
Top View
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70051.
8
7
6
5
S
2
V–
IN
V
L
Truth Table—DG419
Logic
0
1
SW
1
ON
OFF
SW
2
OFF
ON
Logic “0” =
v
0.8 V, Logic “1” =
w
2.4 V
Siliconix
S-52880—Rev. D, 28-Apr-97
1
DG417/418/419
Ordering Information
Temp Range
DG417/418
8-Pin Plastic MiniDIP
–40 to 85_C
8-Pin Narrow SOIC
–55 to 125_C
8-Pin CerDIP
DG417DJ
DG418DJ
DG417DY
DG418DY
DG417AK, DG417AK/883
DG418AK, DG418AK/883
Package
Part Number
DG419
–40 to 85_C
–55 to 125_C
8-Pin Plastic MiniDIP
8-Pin Narrow SOIC
8-Pin CerDIP
DG419DJ
DG419DY
DG419AK, DG419AK/883
Absolute Maximum Ratings
Voltages Referenced to V–
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
V
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND –0.3 V) to (V+) + 0.3 V
Digital Inputs
a
V
S
, V
D
. . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) + 2 V
or 30 mA, whichever occurs first
Current, (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current (S or D) Pulsed 1 ms, 10% duty cycle . . . . . . . . . . . . . 100 mA
Storage Temperature
(AK Suffix) . . . . . . . . . . . . . . –65 to 150_C
(DJ, DY Suffix) . . . . . . . . . . . –65 to 125_C
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V– will be clamped by
internal diodes. Limit forward diode current to maximum current
ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 75_C
d. Derate 6.5 mW/_C above 25_C
e. Derate 12 mW/_C above 75_C
Power Dissipation (Package)
b
8-Pin Plastic MiniDIP
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW
8-Pin Narrow SOIC
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW
8-Pin CerDIP
e
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
Schematic Diagram (Typical Channel)
V+
S
V
L
Level
Shift/
Drive
V+
GND
D
V-
V-
V
IN
Figure 1.
2
Siliconix
S-52880—Rev. D, 28-Apr-97
DG417/418/419
Specifications
a
Test Conditions
Unless Otherwise Specified
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
V
ANALOG
r
DS(on)
I
S(off)
Switch Off
Leakage Current
I
D(off)
V+ = 16.5 V, V– = –16.5 V
16 5 V V
16 5
V
D
=
#15.5
V
V
S
=
"15.5
V
DG417
DG418
DG419
DG417
DG418
DG419
I
S
= –10 mA, V
D
=
"12.5
V
V+ = 13.5 V, V– = –13.5 V
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
20
–0.1
–0.1
–0.1
–0.4
–0.4
–0.25
–20
–0.25
–20
–0.75
–60
–0.4
–40
–0.75
–60
–15
15
35
45
0.25
20
0.25
20
0.75
60
0.4
40
0.75
60
–0.25
–5
–0.25
–5
–0.75
–12
–0.4
–10
–0.75
–12
–15
15
35
45
0.25
5
0.25
5
0.75
12
0.4
10
0.75
12
nA
V
W
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Symbol
V+ = 15 V, V– = –15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
Channel On
Leakage C
L k
Current
I
D(on)
V+ = 16.5 V, V– = –16.5 V
,
V
S
= V
D
=
"15.5
V
15 5
Digital Control
Input Current
V
IN
Low
Input Current
V
IN
High
I
IL
I
IH
Full
Full
0.005
0.005
–0.5
–0.5
0.5
0.5
–0.5
–0.5
0.5
mA
0.5
Dynamic Characteristics
Turn-On Time
Turn-Off Time
t
ON
t
OFF
t
TRANS
t
D
Q
C
S(off)
f = 1 MHz V
S
= 0 V
MHz,
Drain Off Capacitance
Channel On
Capacitance
C
D(off)
C
D(on)
DG417
DG418
DG417
DG418
DG419
R
L
= 300
W
, C
L
= 35 pF
V
S
=
"10
V
See Switching Time
Test Circuit
R
L
= 300
W
, C
L
= 35 pF
V
S1
=
"10
V
V
S2
=
#10
V
R
L
= 300
W
, C
L
= 35 pF
V
S1
= V
S2
=
"10
V
DG417
DG418
DG417
DG418
DG419
Room
Full
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
13
60
8
8
30
35
5
100
60
175
250
145
210
175
250
5
pC
175
250
145
210
175
250
ns
Transition Time
Break-Before-Make
Time Delay
Charge Injection
Source Off
Capacitance
DG419
C
L
= 10 nF, V
gen
= 0 V, R
gen
= 0
W
p
pF
f = 1 MHz, V
S
= 0 V
,
Power Supplies
Positive Supply
Current
Negative Supply
Current
Logic Supply Current
I+
I–
I
L
I
GND
V+ = 16.5 V, V– = –16.5 V
V
IN
= 0 or 5 V
Room
Full
Room
Full
Room
Full
Room
Full
0.001
–0.001
0.001
–0.000
1
–1
–5
1
5
–1
–5
–1
–5
1
5
–1
–5
1
5
A
mA
1
5
Ground Current
Siliconix
S-52880—Rev. D, 28-Apr-97
3
DG417/418/419
Specifications
a
for Unipolar Supplies
Test Conditions
Unless Otherwise Specified
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
V
ANALOG
r
DS(on)
I
S
= –10 mA, V
D
= 3.8 V
V+ = 10.8 V
Full
Room
40
0
12
0
12
V
W
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Symbol
V+ = 12 V, V– = 0 V
VV
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
t
ON
t
OFF
t
D
Q
R
L
= 300
W
, C
L
= 35 pF, V
S
= 8 V
p ,
S S i hi Ti T Ci i
See Switching Time Test Circuit
R
L
= 300
W
, C
L
= 35 pF
DG419
Room
Room
Room
Room
110
40
60
5
pC
ns
C
L
= 10 nF, V
gen
= 0 V, R
gen
= 0
W
Power Supplies
Positive Supply
Current
Negative Supply
Current
Logic Supply Current
Ground Current
I+
I–
I
L
I
GND
V+ = 13.2 V, V
L
= 5.25 V
V
IN
= 0 or 5 V
Room
Room
Room
Room
0.001
–0.001
0.001
–0.001
mA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
4
Siliconix
S-52880—Rev. D, 28-Apr-97
DG417/418/419
Typical Characteristics
50
r
DS(on)
vs. V
D
and Supply Voltage
I
D
= –10 mA
"5
V
40
r
DS(on)
vs. Temperature
40
"8
V
r
DS(on)
(
W
)
30
"10
V
"12
V
"15
V
"20
V
10
r
DS(on)
(
W
)
30
T
A
= 125_C
20
25_C
–55_C
20
10
0
–20
–15
–10
–5
0
5
10
15
20
V
D
– Drain Voltage (V)
30
20
10
I (pA)
0
–10
–20
–30
–15
–10
–5
0
5
10
15
V
D
or V
S
– Drain or Source Voltage (V)
DG417/418: I
D(on)
DG419: I
D(off)
, I
D(on)
0
–15
–10
–5
0
5
10
15
V
D
– Drain Voltage (V)
200
Leakage Currents vs. Analog Voltage
V+ = 15 V
V– = –15 V
V
L
= 5 V
DG417/418: I
D(off)
, I
S(off)
DG419: I
S(off)
Q (pC)
Drain Charge Injection
V+ = 16.5 V
V– = –16.5 V
V
L
= 5 V
V
IN
= 0 V
C
L
= 10 nF
1 nF
150
100
500 pF
50
100 pF
0
–50
–15
–10
–5
0
5
10
15
V
S
– Source Voltage (V)
3.5
3.0
2.5
V
IN
(V)
Input Switching Threshold vs. Supply Voltages
50
42
40
Operating Voltage Range
1.5
1.0
0.5
V
L
= 5 V
V+ (V)
2.0
V
L
= 7 V
30
20
10
2
0
10
–10
15
–15
20
–10
25
–5
30
0
35
0
40
0
0
(V+) 5
(V–) –5
Siliconix
S-52880—Rev. D, 28-Apr-97
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5 V CMOS
Compatible
F
F
TTL Compatible
V
IN
= 0.8 V, 2.4 V
0
CMOS Compatible
–40
–10
–20
–30
Negative Supply V– (V)
F
= Voltages Used for Production Testing
5
