首页 > 器件类别 > 模拟混合信号IC > 信号电路

DG444BDN

improved quad spst cmos analog switches

器件类别:模拟混合信号IC    信号电路   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

下载文档
器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Vishay(威世)
零件包装代码
QFN
包装说明
HVQCCN, LCC16,.16SQ,25
针数
16
Reach Compliance Code
unknown
模拟集成电路 - 其他类型
SPST
JESD-30 代码
S-XQCC-N16
JESD-609代码
e0
长度
4 mm
标称负供电电压 (Vsup)
-15 V
正常位置
NC
信道数量
1
功能数量
4
端子数量
16
标称断态隔离度
90 dB
最大通态电阻 (Ron)
80 Ω
最高工作温度
85 °C
最低工作温度
-40 °C
输出
SEPARATE OUTPUT
封装主体材料
UNSPECIFIED
封装代码
HVQCCN
封装等效代码
LCC16,.16SQ,25
封装形状
SQUARE
封装形式
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度)
240
电源
12/+-15 V
认证状态
Not Qualified
座面最大高度
1 mm
标称供电电压 (Vsup)
15 V
表面贴装
YES
最长断开时间
200 ns
最长接通时间
300 ns
切换
BREAK-BEFORE-MAKE
技术
CMOS
温度等级
INDUSTRIAL
端子面层
TIN LEAD
端子形式
NO LEAD
端子节距
0.65 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
30
宽度
4 mm
文档预览
DG444B/445B
New Product
Vishay Siliconix
Improved Quad SPST CMOS Analog Switches
FEATURES
D
D
D
D
D
Low On-Resistance: 45
W
Low Power Consumption: 1.0 mW
Fast Switching Action—t
ON
: 120 ns
Low Charge Injection
TTL/CMOS Logic Compatible
BENEFITS
D
D
D
D
D
Low Signal Errors and Distortion
Reduced Power Supply Consumption
Faster Throughput
Reduced Pedestal Errors
Simple Interfacing
APPLICATIONS
D
D
D
D
D
D
Audio Switching
Data Acquisition
Sample-and-Hold Circuits
Communication Systems
Automatic Test Equipment
Medical Instruments
DESCRIPTION
The DG444B/445B are monolithic quad analog switches
designed to provide high speed, low error switching of analog
and audio signals. The DG444B/445B are upgrades to the
original DG444/445.
Combing low on-resistance (45
Ω,
typ.) with high speed (t
ON
120 ns, typ.), the DG444B/445B are ideally suited for Data
Acquisition, Communication Systems, Automatic Test
Equipment, or Medical Instrumentation. Charge injection has
been minimized on the drain for use in sample-and-hold
circuits.
The DG444B/445B are built using Vishay Siliconix’s
high-voltage silicon-gate process. An epitaxial layer prevents
latchup.
When on, each switch conducts equally well in both directions
and blocks input voltages to the supply levels when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG444B
Dual-In-Line and SOIC
IN
1
D
1
S
1
V−
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top View
16
15
14
13
12
11
10
9
IN
2
D
2
S
2
V+
V
L
S
3
D
3
IN
3
TRUTH TABLE
Logic
0
1
DG444B
ON
OFF
Logic “0”
v
0.8 V
Logic “1”
w
2.4 V
DG445B
OFF
ON
DG444B
QFN16 (4x4 mm)
D
1
IN
1
IN
2
D
2
16
15
14
13
ORDERING INFORMATION
Temp Range
Package
16-Pin
16 Pin Plastic DIP
12
11
10
9
S
2
V+
V
L
S
3
16-Pin
16 Pin QFN 4x4 mm
−40
to 85_C
40
16-Pin
16 Pin Narrow SOIC
Part Number
DG444BDJ
DG445BDJ
DG444BDY
DG445BDY
DG444BDN
DG445BDN
S
1
V−
GND
S
4
1
2
3
4
5
6
7
8
D
4
IN
4
IN
3
D
3
Top View
Document Number: 72626
S-32554—Rev. A, 15-Dec-03
www.vishay.com
1
DG444B/445B
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
V+ to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
V
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND
−0.3
V) to (V+) + 0.3 V
Digital Inputs
a
V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . (V−)
−2
V to (V+) +2 V
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−65
to 125_C
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V− will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 75_C
d. Derate 8 mW/_C above 75_C
Power Dissipation (Package)b
16-Pin Plastic DIP
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
16-Pin Narrow Body SOIC
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW
QFN-16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850 mW
New Product
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS FOR DUAL SUPPLIES
Test Conditions
Unless Otherwise Specified
Parameter
Analog Switch
Analog Signal Range
d
Drain-Source On-Resistance
V
ANALOG
r
DS(on)
I
S(off)
Switch Off Leakage Current
I
D(off)
Channel On Leakage Current
I
D(on)
V
D
=
#14
V V
S
=
#14
V
V,
I
S
= 1 mA, V
D
=
#10
V
Full
Room
Full
Room
Full
Room
Full
Room
Full
−0.5
−5
−0.5
−5
−0.5
−10
−15
45
"0.01
"0.01
#0.02
15
80
95
0.5
5
0.5
5
0.5
10
nA
V
W
Limits
−40
to 85_C
Symbol
V+ = 15 V, V− =
−15
V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
V
S
= V
D
=
#14
V
Digital Control
Input Voltage Low
Input Voltage High
Input Current V
IN
Low
Input Current V
IN
High
V
INL
V
INH
I
INL
I
INH
V
IN
under test = 0.8 V, All Other = 2.4 V
V
IN
under test = 2.4 V, All Other = 0.8 V
Full
Full
Full
Full
2.4
−1
−1
−0.01
0.01
1
1
0.8
V
mA
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
e
Off Isolation
e
Crosstalk (Channel-to-Channel)
d
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
t
ON
t
OFF
Q
OIRR
X
TALK
C
S(off)
C
D(off)
C
D(on)
R
L
= 1 kW , C
L
= 35 pF
V
S
=
"10
V, See Figure 2
C
L
= 1 nF, V
S
= 0 V
V
gen
= 0 V, R
gen
= 0
W
R
L
= 50
W
, C
L
= 15 pF, V
S
= 1 V
RMS
f = 100 kHz
V
S
= 0 V f = 100 kHz
V,
V
S
V
D
= 0 V, f = 1 MHz
Room
Room
Room
Room
Room
Room
Room
Room
1
90
95
5
5
16
p
pF
300
200
ns
pC
dB
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
I+
I−
I
IN
V
IN
= 0 or 5 V
Room
Full
Room
Full
Room
Full
−1
−5
1
5
Document Number: 72626
S-32554—Rev. A, 15-Dec-03
1
5
mA
www.vishay.com
2
DG444B/445B
New Product
SPECIFICATIONS FOR UNIPOLAR SUPPLIES
Test Conditions
Unless Otherwise Specified
Parameter
Analog Switch
Analog Signal Range
d
Drain-Source On-Resistance
d
V
ANALOG
r
DS(on)
I
S
= 1 mA, V
D
= 3 V, 8 V
Full
Room
Full
0
90
12
160
200
V
W
Vishay Siliconix
D Suffix
−40
to 85_C
Symbol
V+ = 12 V, V− = 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
t
ON
t
OFF
Q
R
L
= 1 kW , C
L
= 35 pF, V
S
= 8 V
See Figure 2
C
L
= 1 nF, V
gen
= 6 V, R
gen
= 0
W
Room
Room
Room
120
60
4
300
200
ns
pC
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
I+
V
IN
= 0 or 5 V
I−
I
IN
V
L
= 5.25 V, V
IN
= 0 or 5 V
Room
Full
Room
Full
Room
Full
−1
−5
1
5
1
5
mA
Notes:
a. Room = 25_C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production test.
e. V
IN
= input voltage to perform proper function.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
DS(on)
vs. V
D
and Power Supply Voltages
110
r DS(on) Drain-Source On-Resistance (
W
)
r DS(on) Drain-Source On-Resistance (
W
)
100
90
80
70
60
50
40
30
20
10
−20 −16 −12
−8
−4
0
4
8
12
16
20
V
D
Drain Voltage (V)
"20
V
"10
V
"15
V
"5
V
100
90
80
70
60
50
40
30
20
10
0
−15
r
DS(on)
vs. V
D
and Temperature
V+ = 15 V
V− =
−15
V
125_C
85_C
25_C
−55_C
−10
−5
0
5
10
15
V
D
Drain Voltage (V)
Document Number: 72626
S-32554—Rev. A, 15-Dec-03
www.vishay.com
3
DG444B/445B
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
250
r DS(on) Drain-Source On-Resistance (
W
)
r
DS(on)
vs. V
D
and Single Power Supply Voltages
V+ = 5 V
Leakage Currents vs. Analog Voltage
40
30
20
I S,I D
Current (pA)
10
0
−10
−20
−30
−40
−20
I
S(off)
, I
D(off)
V+ = 22 V
V− =
−22
V
T
A
= 25_C
I
D(on)
225
200
175
150
125
100
75
50
25
0
0
2
4
7V
10 V
12 V
15 V
6
8
10
12
14
16
−15
−10
−5
0
5
10
15
20
V
D
Drain Voltage (V)
V
ANALOG
Analog Voltage (V)
1 nA
Leakage Current vs. Temperature
V+ = 15 V
V− =
−15
V
V
S,
V
D
=
"14
V
30
20
10
0
−10
−20
Q
S,
Q
D
Charge Injection vs. Analog Voltage
I S,I D
Current
Q
Charge (pC)
100 pA
V+ = 15 V
V− =
−15
V
I
S(off)
, I
D(off)
10 pA
V+ = 12 V
V− = 0 V
1 pA
−55
−35
−15
5
25
45
65
85
105 125
−30
−15
−10
−5
0
5
10
15
Temperature (_C)
V
ANALOG
Analog Voltage (V)
Off Isolation vs. Frequency
120
110
100
90
80
70
60
50
40
10 k
100 k
1M
10 M
f
Frequency (Hz)
V+ = +15 V
V− =
−15
V
OIRR (dB)
R
L
= 50
W
www.vishay.com
4
Document Number: 72626
S-32554—Rev. A, 15-Dec-03
DG444B/445B
New Product
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
Vishay Siliconix
S
V
L
Level
Shift/
Drive
V−
V
IN
V+
GND
D
V−
FIGURE 1.
TEST CIRCUITS
+5 V
+15 V
Logic
Input
V
L
"10
V
S
IN
3V
GND
V−
Switch
Output
Note:
0V
t
ON
Logic input waveform is inverted for DG445.
V+
D
R
L
1 kW
C
L
35 pF
0V
V
O
Switch
Input
V
S
V
O
t
OFF
80%
80%
3V
50%
50%
t
r
<20 ns
t
f
<20 ns
−15
V
C
L
(includes fixture and stray capacitance)
FIGURE 2.
Switching Time
+5 V
+15 V
DV
O
V
O
R
g
V
L
S
IN
V+
D
C
L
1 nF
V−
V
O
IN
X
(DG444B)
V
g
OFF
ON
OFF
3V
GND
−15
V
IN
X
(DG445B)
OFF
ON
Q =
DV
O
x C
L
OFF
FIGURE 3.
Charge Injection
Document Number: 72626
S-32554—Rev. A, 15-Dec-03
www.vishay.com
5
查看更多>
参数对比
与DG444BDN相近的元器件有:DG445BDN。描述及对比如下:
型号 DG444BDN DG445BDN
描述 improved quad spst cmos analog switches improved quad spst cmos analog switches
是否无铅 含铅 含铅
是否Rohs认证 不符合 不符合
厂商名称 Vishay(威世) Vishay(威世)
零件包装代码 QFN QFN
包装说明 HVQCCN, LCC16,.16SQ,25 HVQCCN, LCC16,.16SQ,25
针数 16 16
Reach Compliance Code unknown unknown
模拟集成电路 - 其他类型 SPST SPST
JESD-30 代码 S-XQCC-N16 S-XQCC-N16
JESD-609代码 e0 e0
长度 4 mm 4 mm
标称负供电电压 (Vsup) -15 V -15 V
正常位置 NC NO
信道数量 1 1
功能数量 4 4
端子数量 16 16
标称断态隔离度 90 dB 90 dB
最大通态电阻 (Ron) 80 Ω 80 Ω
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
输出 SEPARATE OUTPUT SEPARATE OUTPUT
封装主体材料 UNSPECIFIED UNSPECIFIED
封装代码 HVQCCN HVQCCN
封装等效代码 LCC16,.16SQ,25 LCC16,.16SQ,25
封装形状 SQUARE SQUARE
封装形式 CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度) 240 240
电源 12/+-15 V 12/+-15 V
认证状态 Not Qualified Not Qualified
座面最大高度 1 mm 1 mm
标称供电电压 (Vsup) 15 V 15 V
表面贴装 YES YES
最长断开时间 200 ns 200 ns
最长接通时间 300 ns 300 ns
切换 BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE
技术 CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL
端子面层 TIN LEAD TIN LEAD
端子形式 NO LEAD NO LEAD
端子节距 0.65 mm 0.65 mm
端子位置 QUAD QUAD
处于峰值回流温度下的最长时间 30 30
宽度 4 mm 4 mm
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消