DG540/541/542
Wideband/Video “T” Switches
Features
D
D
D
D
D
D
D
Wide Bandwidth: 500 MHz
Low Crosstalk: –85 dB
High Off-Isolation: –80 dB @ 5 MHz
“T” Switch Configuration
TTL Logic Compatible
Fast Switching—t
ON
: 45 ns
Low r
DS(on)
: 30
W
Benefits
D
D
D
D
D
D
D
Flat Frequency Response
High Color Fidelity
Low Insertion Loss
Improved System Performance
Reduced Board Space
Reduced Power Consumption
Improved Data Throughput
Applications
D
D
D
D
D
D
D
D
RF and Video Switching
RGB Switching
Local and Wide Area Networks
Video Routing
Fast Data Acquisition
ATE
Radar/FLR Systems
Video Multiplexing
Description
The DG540/541/542 are high performance monolithic
wideband/video switches designed for switching RF, video
and digital signals. By utilizing a “T” switch configuration
on each channel, these devices achieve exceptionally low
crosstalk and high off-isolation. The crosstalk and
off-isolation of the DG540 are further improved by the
introduction of extra GND pins between signal pins.
To achieve TTL compatibility, low channel capacitances
and fast switching times, the DG540 family is built on the
Siliconix proprietary D/CMOS process. Each switch
conducts equally well in both directions when on.
Functional Block Diagrams and Pin Configurations
DG540
Dual-In-Line
IN
1
D
1
GND
S
1
V–
GND
S
4
GND
D
4
IN
4
1
2
3
4
5
6
7
8
9
10
Top View
20
19
18
17
16
15
14
13
12
11
IN
2
D
2
GND
S
2
V+
GND
S
3
GND
D
3
IN
3
S
1
V–
GND
S
4
GND
4
5
6
7
8
9 10 11 12 13
Top View
D
3
GND
D
4
IN
4
IN
3
18
17
16
15
14
GND
S
2
V+
GND
S
3
0
1
GND
DG540
PLCC
D
1
IN
1
2
IN
2
1 20 19
D
2
3
Truth Table
Logic
Switch
OFF
ON
Logic “0”
v
0.8 V
Logic “1”
w
2 V
1
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70055.
Siliconix
S-53694—Rev. E, 28-May-97
1
DG540/541/542
Functional Block Diagrams and Pin Configurations (Cont’d)
DG541
Dual In Line and SOIC
IN
1
D
1
S
1
V–
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top View
16
15
14
13
12
11
10
9
IN
2
D
2
S
2
V+
GND
S
3
D
3
IN
3
IN
1
D
1
GND
S
1
V–
S
4
GND
D
4
1
2
3
4
5
6
7
8
Top View
DG542
Dual-In-Line and SOIC
16
15
14
13
12
11
10
9
IN
2
D
2
GND
S
2
V+
S
3
GND
D
3
Truth Table - DG541
Logic
0
1
Logic “0”
v
0.8 V
Logic “1”
w
2 V
Truth Table - DG542
Switch
OFF
ON
Logic
0
1
SW
1
, SW
2
OFF
ON
Logic “0”
v
0.8 V
Logic “1”
w
2 V
SW
3
, SW
4
ON
OFF
Ordering Information
Temp Range
DG540
–40to 85
_C
–40 to 85_C
–55 to 125_C
20-Pin Plastic DIP
20-Pin PLCC
20-Pin Sidebraze
DG540DJ
DG540DN
DG540AP
DG540AP/883
Package
Part Number
DG541
–40 to 85_C
16-Pin Plastic DIP
16-Pin Narrow SOIC
–55 to 125_C
16-Pin Sidebraze
DG541DJ
DG541DY
DG541AP
DG541AP/883
DG542
–40 to 85_C
–55 to 125_C
16-Pin Plastic DIP
16-Pin Narrow SOIC
16-Pin Sidebraze
DG542DJ
DG542DY
DG542AP
DG542AP/883
2
Siliconix
S-53694—Rev. E, 28-May-97
DG540/541/542
Absolute Maximum Ratings
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 21 V
V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 21 V
V– to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –19 V to +0.3 V
Digital Inputs . . . . . . . . . . . . . . . . . . . . . . . . (V–) –0.3 V to (V+) +0.3 V
or 20 mA, whichever occurs first
V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –0.3 V to (V–) +14 V
or 20 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . 20 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle max) . . . . . . . . . . 40 mA
Storage Temperature
(AP Suffix) . . . . . . . . . . . . . . –65 to 150_C
(DJ, DN, DY Suffixes) . . . . . –65 to 125_C
Power Dissipation (Package)a
16-Pin Plastic DIP
b
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20-Pin Plastic DIP
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin Narrow Body SOIC
d
. . . . . . . . . . . . . . . . . . . . . . . . . . .
20-Pin PLCC
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-, 20-Pin Sidebraze DIP
e
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. All leads welded or soldered to PC Board.
b. Derate 6.5 mW/_C above 25_C
c. Derate 7 mW/_C above 25_C
d. Derate 10 mW/_C above 75_C
e. Derate 12 mW/_C above 75_C
470 mW
800 mW
640 mW
800 mW
900 mW
Schematic Diagram (Typical Channel)
V+
GND
V
REF
S
IN
–
+
D
V–
Figure 1.
Siliconix
S-53694—Rev. E, 28-May-97
3
DG540/541/542
Specifications
a
Test Conditions
Unless Specified
Parameter
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
r
DS(on)
Match
Source Off
Leakage Current
Drain Off
Leakage Current
Channel On
Leakage Current
V
ANALOG
r
DS(on)
Dr
DS(on)
I
S(off)
I
D(off)
I
D(on)
V
S
= 0 V, V
D
= 10 V
V
S
= 10 V, V
D
= 0 V
V
S
= V
D
= 0 V
V– = –5 V, V+ = 12 V
I
S
= –10 mA, V
D
= 0 V
,
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
30
2
–0.05
–0.05
–0.05
–10
–500
–10
–500
–10
–1000
–5
5
60
100
6
10
500
10
500
10
1000
–10
–100
–10
–100
–10
–100
–5
5
60
75
6
10
100
10
100
10
100
nA
V
W
A Suffix
–55 to 125_C
D Suffixes
–40 to 85_C
Symbol
V+ = 15 V, V– = –3 V
VV
3
V
INH
= 2 V, V
INL
= 0.8 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
Digital Control
Input Voltage High
Input Voltage Low
Input Current
V
INH
V
INL
I
IN
V
IN
= GND or V+
Full
Full
Room
Full
0.05
–1
–20
2
0.8
1
20
–1
–20
2
0.8
1
20
mA
V
Dynamic Characteristics
On State Input Capacitance
e
Off State Input Capacitance
e
Off State Output Capacitance
e
Bandwidth
C
S(on)
C
S(off)
C
D(off)
BW
V
S
= V
D
= 0 V
V
S
= 0 V
V
D
= 0 V
R
L
= 50
W
, See Figure 5
DG540
DG541
Turn On Time
t
ON
R
L
= 1 kW
W
C
L
= 35 pF
p
50% to 90%
See Figure 2
DG542
DG540
DG541
DG542
Charge Injection
Q
C
L
= 1000 pF, V
S
= 0 V
See Figure 3
R
IN
= 75
W
R
L
= 75
W
f = 5 MHz
See Figure 4
DG540
DG541
DG542
Room
Room
Room
Room
Room
Full
Room
Full
Room
Full
Room
Full
Room
Room
Room
Room
Room
14
2
2
500
45
55
20
25
70
130
100
160
50
85
60
85
70
130
100
160
50
85
60
85
pC
ns
20
4
4
20
4
4
MHz
pF
Turn Off Time
t
OFF
–25
–80
–60
–75
–85
Off Isolation
OIRR
dB
All Hostile Crosstalk
X
TALK(AH)
R
IN
= 10
W
, R
L
= 75
W
f = 5 MHz, See Figure 6
Power Supplies
Positive Supply Current
Negative Supply Current
I+
All Channels On or Off
I–
Room
Full
Room
Full
3.5
–3.2
–6
–9
6
9
–6
–9
6
9
mA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
4
Siliconix
S-53694—Rev. E, 28-May-97
DG540/541/542
Typical Characteristics
6
5
4
I
S(off)
, I
D(off)
– Leakage
3
2
I (mA)
1
0
–1
–2
–3
–4
–5
–55 –35 –15
0.1 pA
5
25 45 65
Temperature (_C)
85
105 125
–55
–25
0
25
50
75
Temperature (_C)
100
125
I–
I
GND
I+
1 nA
100 pA
10 pA
1 pA
10 nA
Supply Curent vs. Temperature
100 nA
I
D(off)
, I
S(off)
vs. Temperature
160
r
DS(on)
– Drain-Source On-Resistance (
W
)
140
120
100
80
60
40
20
0
–3
–1
r
DS(on)
vs. Drain Voltage
r
DS(on)
– Drain-Source On-Resistance (
W
)
V+ = 15 V
V– = –3 V
125_C
V+ Constant
42
V+ = 10 V
40
38
36
34
32
30
20
18
V+ = 15 V
V+ = 12 V
40
38
42
V– Constant
V– = –5 V
36
34
32
30
20
18
–5 –4 –3 –2 –1
0
10 11 12 13 14 15 16
V+ – Positive Supply (V)
V– = –1 V
V– = –3 V
25_C
–55_C
1
3
5
7
9
11
V
D
– Drain Voltage (V)
V– – Negative Supply (V)
22
20
18
On Capacitance
–110
–100
–90
–80
ISO (dB)
Off Isolation
DG540
DG542
DG541
16
C (pF)
14
12
10
–70
–60
–50
–40
–30
8
6
0
2
4
6
8
10
12
14
V
D
– Drain Voltage (V)
–20
–10
1
10
f – Frequency (MHz)
100
Siliconix
S-53694—Rev. E, 28-May-97
5
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