DGS 10-022A DGSK 20-022A
DGS 9-025AS DGS 10-025A DGSK 20-025A
Gallium Arsenide Schottky Rectifier
Preliminary Data
I
DC
= 12 A
V
RRM
= 220/250 V
C
Junction
= 18 pF
V
RSM
V
RRM
Type
V
V
250
250
DGS 9-025A
Marking on
product
A
C
9A25AS
Single
TO-252 AA
A
C
A
A
C (TAB)
220
250
220
250
DGS 10-022A
DGS 10-025A
DGS 10-022A
DGS 10-025A
Single
TO-220 AC
C
A
C (TAB)
220
250
220
250
DGSK 20-022A DGSK 20-022A
DGSK 20-025A DGSK 20-025A
Common cathode
A
C
A
TO-220 AB
A
C
A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Symbol
I
FAV
I
FAV
I
FSM
T
VJ
T
stg
P
tot
M
d
Symbol
I
R
V
F
C
J
R
thJC
R
thCH
Weight
Pulse test:
Conditions
T
C
= 25°C; DC
T
C
= 90°C; DC
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
Maximum Ratings
12
9
20
-55...+175
-55...+150
A
A
A
°C
°C
W
Nm
Features
●
●
●
●
●
T
C
= 25°C
mounting torque (TO-220)
Conditions
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 125°C V
R
= V
RRM
I
F
= 5 A;
I
F
= 5 A;
T
VJ
= 125°C
T
VJ
= 25°C
34
0.4...0.6
●
●
Low forward voltage
Very high switching speed
Low junction capacity of GaAs
- low reverse current peak at turn off
Soft turn off
Temperature independent switching
behaviour
High temperature operation capability
Epoxy meets UL 94V-0
Characteristic Values
typ.
max.
1.3
1.3
1.3
1.2
18
4.4
1.5
mA
mA
V
V
pF
K/W
K/W
g
g
Applications
●
MHz switched mode power supplies
(SMPs)
●
●
●
Small size SMPs
High frequency converters
Resonant converters
V
R
= 100 V; T
VJ
= 125°C
TO-220
TO-252
TO-220
Pulse Width = 5 ms, Duty Cycle < 2.0 %
0.5
0.3
2
Data according to IEC 60747 and per diode
unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
© 2002 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1-2
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
238
DGS 10-022A DGSK 20-022A
DGS 9-025AS DGS 10-025A DGSK 20-025A
Outlines TO-220
20
10
A
I
F
1
100
C
J
200
pF
0,1
T
VJ
=
125°C
25°C
T
VJ
= 125°C
Dim.
0,01
0,0
0,5
1,0
1,5
V
F
V 2,0
10
0,1
1
10
100 V 1000
V
R
Fig. 1typ. forward characteristics
Fig. 2 typ. junction capacity
versus blocking voltage
10
K/W
1
Z
thJC
Single Pulse
TO-252
TO-220
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Millimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.38
0.56
2.29
2.79
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.015 0.022
0.090 0.110
0,1
Outlines TO-252 AA
0,01
DGS10-022/025A
0,00001
0,0001
0,001
0,01
0,1
1
t
s
10
1 Anode
2 NC
3 Anode
4 Cathode
Fig. 3 typ. thermal impedance junction to case
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide
Schottky diodes:
Dim.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
Rectifier Diode
conduction
by majority + minority carriers
forward characteristics V
F
(I
F
)
turn off characteristics extraction of excess carriers
causes temperature dependant
reverse recovery (t
rr
, I
RM
, Q
rr
)
turn on characteristics delayed saturation leads to V
FR
GaAs Schottky Diode
by majority carriers only
V
F
(I
F
), see Fig. 1
reverse current charges
junction capacity C
J
, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
Millimeter
Min. Max.
2.19
2.38
0.89
1.14
0
0.13
0.64
0.89
0.76
1.14
5.21
5.46
0.46
0.58
0.46
0.58
5.97
6.22
4.32
5.21
6.35
6.73
4.32
5.21
2.28 BSC
4.57 BSC
9.40 10.42
0.51
1.02
0.64
0.89
2.54
1.02
1.27
2.92
Inches
Min.
Max.
0.086
0.094
0.035
0.045
0
0.005
0.025
0.035
0.030
0.045
0.205
0.215
0.018
0.023
0.018
0.023
0.235
0.245
0.170
0.205
0.250
0.265
0.170
0.205
0.090 BSC
0.180 BSC
0.370
0.410
0.020
0.040
238
0.025
0.035
0.100
0.040
0.050
0.115
© 2002 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
2-2
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
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