TUNING VARACTOR
Selection guide
TUNING VARACTOR
Selection Guide
PAGE
SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR
1-32
HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR
-
-
VBR = 30 V
VBR = 45 V
1-34
1-35
SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
1-36
MICROWAVE SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
1-39
A tuning varactor is a P-N diode that acts as a voltage controlled capacitor. These devices perform the
same function as the familiar, bulky, air dielectric stacked capacitors featured in traditional broadcast
band receivers.
1-31
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TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor
SOT23 SURFACE MOUNT SILICON ABRUPT
TUNING VARACTOR
Description
This series of silicon tuning varactors have an epitaxial mesa design with a high temperature
passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family
is designed for a low cost medium to high volume market that may be supplied in tape and reel
for automated pick and place assembly on surface mount circuit boards.
Applications
The DH71000 series abrupt tuning varactor are offered in a large selection of capacitance range.
They provide the highest Q factor (low reverse series resistance) available for a 30 volts silicon device.
Typical applications include low noise narrow and moderate frequency bandwidth applications
(VCO mainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned
filters, phase shifters, delay line, etc.
NOTE:
Variation of the junction capacitance versus reverse voltage follows this equation:
C
j
(V
r
)
=
C
j
(0 V)
1 + V
r
φ
[
]
γ
V
r
:
φ
:
γ
:
Reverse voltage
Built-in potential .7V for Si
.5 for abrupt tuning varactor
1-32
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TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor
Electrical characteristics at Ta = +25° C
Reverse breakdown voltage, Vb = @10 µA: 30 V min.
Electrical
parameters
Test Conditions
Type
Breakdown
voltage
V
BR
I
R
= 10 µA
V
min.
Junction
capacitance
Cj
F = 1 MHz
V
R
= 4 V
pF
(1)
Tuning
ratio
Figure
of merit
Q
V
R
= 4 V
F = 50 MHz
typ.
4300
4100
3900
3400
2200
2600
2200
Cj0V/Cj30V
typ.
4.0
4.5
4.6
4.7
4.8
4.9
5.0
DH71010
30
DH71016
30
DH71020
30
DH71030
30
DH71045
30
DH71067
30
DH71100
30
(1)
Other tolerance on request
Temperature ranges:
Operating junction (T
j
):
Packages
SOD323
Packages
SOT23
1.0 ± 20%
1.6 ± 20%
2.0 ± 20%
3.0 ± 20%
4.5 ± 20%
6.7 ± 10%
10 ± 10%
-55° C to +125° C
Storage:
-65° C to +150° C
SOT23
SOT23
SOT143
DH71010
DH71016
DH71020
DH71030
DH71045
DH71067
DH71100
DH71010-60
DH71016-60
DH71020-60
DH71030-60
DH71045-60
DH71067-60
DH71100-60
DH71010-51
DH71016-51
DH71020-51
DH71030-51
DH71045-51
DH71067-51
DH71100-51
DH71010-53
DH71016-53
DH71020-53
DH71030-53
DH71045-53
DH71067-53
DH71100-53
DH71010-54
DH71016-54
DH71020-54
DH71030-54
DH71045-54
DH71067-54
DH71100-54
DH71010-70
DH71016-70
DH71020-70
DH71030-70
DH71045-70
DH71067-70
DH71100-70
(1) Other configuration available on request.
How to order?
DH71010
Diode type
-
51
Package
information
51: single SOT23
53: dual common
cathode SOT23
54: dual common
anode SOT23
60: single SOD323
70: dual SOT143
T3
Conditioning
T3: 3000 pieces
tape & reel
T10: 10000 pieces
tape & reel
blank: bulk
1-33
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TUNING VARACTOR
High Q silicon abrupt junction tuning varactor
HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR
V
BR
30 V
Description
This series of high Q epi-junction microwave tuning varactors (30 V) incorporates a passivated mesa
technology. It is well suited for frequency tuning applications up to Ku band.
C
HIP
D
IODES
Gold
dia
Ø
C
HIP AND
P
ACKAGED
D
IODES
V
BR
(10 µA)
≥
30 V
junction
capacitance
Cj
V
R
= 4 V
f = 1 MH
Z
µm
typ.
EH71004
EH71006
EH71008
EH71010
EH71012
EH71016
EH71020
EH71025
EH71030
EH71037
EH71045
EH71054
EH71067
EH71080
EH71100
EH71120
EH71150
EH71180
EH71200
EH71220
EH71270
EH71330
EH71390
EH71470
EH71560
EH71680
EH71820
EH71999
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2b
C2b
C2b
C2b
C2b
C2b
C2b
C2b
C2c
C2c
C2c
C2c
C2c
C2d
C2d
50
60
70
80
90
100
110
120
140
150
170
180
200
220
250
270
300
330
350
370
410
450
500
540
590
650
720
800
pF
± 20 % (2)
0.4
0.6
0.8
1.0
1.2
1.6
2.0
2.5
3.0
3.7
4.5
5.4
± 10 % (2)
6.7
8.0
10.0
12.0
15.0
18.0
20.0
22.0
27.0
33.0
39.0
47.0
56.0
68.0
82.0
100.0
min.
4500
4500
4400
4300
4200
4100
3900
3600
3400
3200
3000
2800
2600
2400
2200
2000
1800
1700
1500
1400
1300
1200
950
750
650
500
400
300
DH71004
DH71006
DH71008
DH71010
DH71012
DH71016
DH71020
DH71025
DH71030
DH71037
DH71045
DH71054
DH71067
DH71080
DH71100
DH71120
DH71150
DH71180
DH71200
DH71220
DH71270
DH71330
DH71390
DH71470
DH71560
DH71680
DH71820
DH71999
Fig. of
merit
Q
V
R
= 4 V
f = 50 MH
Z
Type
C
ASE
C
APACITANCE
Cb
Case
Cb= 0.18 pF (3)
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
Cb= 0.18 pF (3)
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
min.
3.0
3.4
3.7
4.0
4.3
4.5
4.6
4.6
4.7
4.7
4.8
4.8
4.9
5.0
5.0
5.1
5.1
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
P
ACKAGED
D
IODES
(1)
Standard cases
Other cases
Tuning
ratio
C
TO
/C
T
30
C
ASE
C
APACITANCE
Cb
Case
Cb= 0.12 pF (3) min.
M208
3.3
M208
3.7
M208
4.0
M208
4.3
M208
4.5
M208
4.6
M208
4.7
M208
4.8
M208
4.8
M208
4.8
M208
4.9
M208
4.9
Cb= 0.2 pF (3)
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
4.9
5.0
5.0
5.1
5.1
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
Tuning
ratio
C
TO
/C
T
30
Characteristics at 25°C
Test Conditions
Type
Case
(1) Custom cases available on request
(2) Closer capacitance tolerances available on request
(3) C
T
= Cj + Cb
1-34
Temperature ranges:
Operating junction (T
j
) : -55° C to +150° C
Storage
: -65° C to +175° C
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
TUNING VARACTOR
High Q silicon abrupt junction tuning varactor
V
BR
45 V
Description
This series of high Q epi-junction microwave tuning varactors (45 V) incorporates a passivated mesa
technology. It is well suited for frequency tuning applications up to X band.
Chip diodes
G
OLD
Characteristics at 25° C D
IA
Ø
Test conditions
Type
Case
µm
typ.
EH72004
EH72006
EH72008
EH72010
EH72012
EH72016
EH72020
EH72025
EH72030
EH72037
EH72045
EH72054
EH72067
EH72080
EH72100
EH72120
EH72150
EH72180
EH72200
EH72220
EH72270
EH72330
EH72390
EH72470
EH72560
EH72680
EH72820
EH72999
(1)
(2)
(3)
Chip and packaged diodes
V
BR
(10 µA)
≥
45 V
Junction
C
apacitance
Cj
V
R
= 4 V
f = 1 MH
Z
pF
± 20 % (2)
0.4
0.6
0.8
1.0
1.2
1.6
2.0
2.5
3.0
3.7
4.5
5.4
± 10 % (2)
6.7
8.0
10.0
12.0
15.0
18.0
20.0
22.0
27.0
33.0
39.0
± 10 % (2)
47.0
56.0
68.0
± 10 % (2)
82.0
100.0
3000
2900
2800
2700
2700
2600
2500
2400
2300
2200
2000
1900
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
800
700
600
450
350
250
Fig. of
M
erit
Q
V
R
= 4 V
f = 50 MH
Z
S
TANDARD
C
ASES
Packaged diodes (1)
O
THER
C
ASES
Tuning
Ratio
C
TO
/C
T
45
Tuning
Ratio
C
TO
/C
T
45
Case
Capacitance
Cb
Case
min. Cb
3.5
3.9
4.2
4.5
4.7
5.0
5.2
5.4
5.5
5.6
5.7
5.8
Cb
5.9
5.9
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
= 0.12 pF (3)
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
= 0.2pF (3)
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
min.
3.7
4.1
4.5
4.7
4.9
5.2
5.5
5.6
5.7
5.7
5.8
5.9
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
Case
Capacitance
Cb
Type
min.
DH72004
DH72006
DH72008
DH72010
DH72012
DH72016
DH72020
DH72025
DH72030
DH72037
DH72045
DH72054
DH72067
DH72080
DH72100
DH72120
DH72150
DH72180
DH72200
DH72220
DH72270
DH72330
DH72390
DH72470
DH72560
DH72680
DH72820
DH72999
Case
Cb = 0.18 pF (3)
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
Cb =0.18pF (3)
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
Cb = 0.18 pF (3)
BH28
BH28
BH28
Cb = 0.4 pF (3)
BH141
BH141
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2b
C2b
C2b
C2b
C2b
C2b
C2b
C2c
C2c
C2c
C2c
C2d
C2d
C2d
C2g
C2g
60
80
90
110
110
120
140
150
170
190
210
230
250
280
310
340
380
420
440
470
520
570
620
680
740
820
900
1000
Custom cases available on request
Closer capacitance tolerances available on request
CT = Cj + Cb
Temperature ranges:
Operating junction (Tj) : -55° C to +150° C
Storage
: -65° C to +175° C
1-35
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
创意市集
