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DM74S473

(512 x 8) 4096-Bit TTL PROM

厂商名称:National Semiconductor(TI )

厂商官网:http://www.ti.com

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DM74S473 (512 x 8) 4096-Bit TTL PROM
November 1990
DM74S473
(512 x 8) 4096-Bit TTL PROM
General Description
This Schottky memory is organized in the popular 512
words by 8 bits configuration A memory enable input is pro-
vided to control the output states When the device is en-
abled the outputs represent the contents of the selected
word When disabled the 8 outputs go to the ‘‘OFF’’ or high
impedance state
PROMs are shipped from the factory with lows in all loca-
tions A high may be programmed into any selected location
by following the programming instructions
Features
Y
Y
Y
Y
Y
Y
Advanced titanium-tungsten (Ti-W) fuses
Schottky-clamped for high speed
Address access 45 ns max
Enable access 30 ns max
Enable recovery 30 ns max
PNP inputs for reduced input loading
All DC and AC parameters guaranteed over
temperature
Low voltage TRI-SAFE
TM
programming
Open-collector outputs
Block Diagram
TL D 9715 – 1
Pin Names
A0–A8
G
GND
Q0–Q7
V
CC
Addresses
Output Enable
Ground
Outputs
Power Supply
TRI-SAFE
TM
is a trademark of National Semiconductor Corporation
C
1995 National Semiconductor Corporation
TL D 9715
RRD-B30M105 Printed in U S A
Connection Diagrams
Dual-In-Line Package
Plastic Leaded Chip Carrier (PLCC)
TL D 9715 –2
TL D 9715 – 3
Top View
Order Number DM74S473J 473AJ
DM74S473N or 473AN
See NS Package Number J20A or N20A
Top View
Order Number DM74S473V or 473AV
See NS Package Number V20A
Ordering Information
Commercial Temp Range (0 C to
a
70 C)
Parameter Order Number
DM74S473AN
DM74S473N
DM74S473AJ
DM74S473J
DM74S473AV
DM74S473V
Max Access Time (ns)
45
60
45
60
45
60
2
Absolute Maximum Ratings
(Note 1)
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
b
0 5V to
a
7 0V
Supply Voltage (Note 2)
Input Voltage (Note 2)
Output Voltage (Note 2)
Storage Temperature
Lead Temp (Soldering 10 seconds)
ESD to be determined
Note 1
Absolute maximum ratings are those values beyond which the de-
vice may be permanently damaged They do not mean that the device may
be operated at these values
Note 2
These limits do not apply during programming For the programming
ratings refer to the programming instructions
Operating Conditions
Min
Supply Voltage (V
CC
)
Commercial
Ambient Temperature (T
A
)
Commercial
Logical ‘‘0’’ Input Voltage
Logical ‘‘1’’ Input Voltage
4 75
0
0
20
Max
5 25
a
70
Units
V
C
V
V
b
1 2V to
a
5 5V
b
0 5V to
a
5 5V
b
65 C to
a
150 C
08
55
300 C
DC Electrical Characteristics
(Note 1)
Symbol
I
IL
I
IH
Parameter
Input Load Current
Input Leakage Current
Conditions
Min
V
CC
e
Max V
IN
e
0 45V
V
CC
e
Max V
IN
e
2 7V
V
CC
e
Max V
IN
e
5 5V
V
OL
V
IL
V
IH
I
OZ
Low Level Output Voltage
Low Level Input Voltage
High Level Input Voltage
Output Leakage Current
(Open-Collector Only)
Input Clamp Voltage
Input Capacitance
Output Capacitance
Power Supply Current
V
CC
e
Max V
CEX
e
2 4V
V
CC
e
Max V
CEX
e
5 5V
V
CC
e
Min I
IN
e b
18 mA
V
CC
e
5 0V V
IN
e
2 0V
T
A
e
25 C 1 MHz
V
CC
e
5 0V V
O
e
2 0V
T
A
e
25 C 1 MHz Outputs Off
V
CC
e
Max Input Grounded
All Outputs Open
b
0 8
DM74S473
Typ
b
80
Units
Max
b
250
mA
mA
mA
V
V
V
25
10
0 35
0 45
0 80
20
50
100
b
1 2
V
CC
e
Min I
OL
e
16 mA
mA
mA
V
pF
pF
V
C
C
I
C
O
I
CC
40
60
110
155
mA
Note 1
These limits apply over the entire operating range unless stated otherwise All typical values are for V
CC
e
5 0V and T
A
e
25 C
3
AC Electrical Characteristics
COMMERCIAL TEMP RANGE
(0 C to
a
70 C)
Symbol
TAA
TEA
TER
TZX
TXZ
JEDEC
Symbol
TAVQV
TEVQV
TEXQX
TEVQX
TEXQZ
Parameter
with Standard Load and Operating Conditions
DM74S473
Min
Typ
40
15
15
15
15
Max
60
30
30
30
30
Min
DM74S473A
Typ
25
15
15
15
15
Max
45
30
30
30
30
Units
ns
ns
ns
ns
ns
Address Access Time
Enable Access Time
Enable Recovery Time
Output Enable Time
Output Disable Time
Functional Description
TESTABILITY
The Schottky PROM die includes extra rows and columns of
fusable links for testing the programmability of each chip
These test fuses are placed at the worst-case chip locations
to provide the highest possible confidence in the program-
ming tests in the final product A ROM pattern is also per-
manently fixed in the additional circuitry and coded to pro-
vide a parity check of input address levels These and other
test circuits are used to test for correct operation of the row
and column-select circuits and functionality of input and en-
able gates All test circuits are available at both wafer and
assembled device levels to allow 100% functional and para-
metric testing at every stage of the test flow
RELIABILITY
As with all National products the Ti-W PROMs are subject-
ed to an on-going reliability evaluation by the Reliability As-
surance Department These evaluations employ accelerat-
ed life tests including dynamic high-temperature operating
life temperature-humidity life temperature cycling and ther-
mal shock To date nearly 7 4 million Schottky Ti-W PROM
device hours have been logged with samples in Epoxy B
molded DIP (N-package) PLCC (V-package) and CERIP (J-
package) Device performance in all package configurations
is excellent
TITANIUM-TUNGSTEN FUSES
National’s Programmable Read-Only Memories (PROMs)
feature titanuim-tungsten (Ti-W) fuse links designed to pro-
gram efficiently with only 10 5V applied The high perform-
ance and reliability of these PROMs are the result of fabrica-
tion by a Schottky bipolar process of which the titanium-
tungsten metallization is an integral part and the use of an
on-chip programming circuit
A major advantage of the titanium-tungsten fuse technology
is the low programming voltage of the fuse links At 10 5V
this virtually eliminates the need for guard-ring devices and
wide spacings required for other fuse technologies Care is
taken however to minimize voltage drops across the die
and to reduce parasitics The device is designed to ensure
that worst-case fuse operating current is low enough for
reliable long-term operation The Darlington programming
circuit is liberally designed to insure adequate power density
for blowing the fuse links The complete circuit design is
optimized to provide high performance over the entire oper-
ating ranges of V
CC
and temperature
4
Physical Dimensions
inches (millimeters)
Ceramic Dual-In-Line Package (J)
Order Number DM74S473J or 473AJ
NS Package Number J20A
Molded Dual-In-Line Package (N)
Order Number DM74S473N or 473AN
NS Package Number N20A
5
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参数对比
与DM74S473相近的元器件有:74S473、DM74S473AJ、DM74S473AN、DM74S473AV、DM74S473J、DM74S473N、DM74S473V。描述及对比如下:
型号 DM74S473 74S473 DM74S473AJ DM74S473AN DM74S473AV DM74S473J DM74S473N DM74S473V
描述 (512 x 8) 4096-Bit TTL PROM (512 x 8) 4096-Bit TTL PROM (512 x 8) 4096-Bit TTL PROM (512 x 8) 4096-Bit TTL PROM (512 x 8) 4096-Bit TTL PROM (512 x 8) 4096-Bit TTL PROM (512 x 8) 4096-Bit TTL PROM (512 x 8) 4096-Bit TTL PROM
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