DMN1016UCB6
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
12V
R
DS(ON)
20mΩ @ V
GS
= 4.5V
23mΩ @ V
GS
= 2.5V
I
D
T
A
= +25°C
6.6A
6.1A
Features and Benefits
Low Q
G
& Q
GD
Small Footprint
Low Profile 0.62mm Height
Totally Lead-Free & Full RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
), yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Mechanical Data
Case: U-WLB1510-6
Terminal Connections: See Diagram Below
Terminals: Finished – SnAgCu Ball
Weight: 0.0018 grams (Approximate)
Applications
Battery Management
Load Switch
Battery Protection
U-WLB1510-6
Top View
Ordering Information
(Note 4)
Part Number
DMN1016UCB6-7
Notes:
Case
U-WLB1510-6
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-WLB1510-6
PW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
Feb
2
2016
D
Mar
3
Apr
4
2017
E
May
5
Jun
6
2018
F
Jul
7
2019
G
Aug
8
Sep
9
2020
H
Oct
O
Nov
N
2021
I
Dec
D
October 2016
© Diodes Incorporated
DMN1016UCB6
Document number: DS37124 Rev. 5 - 2
1 of 7
www.diodes.com
DMN1016UCB6
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
=4.5V
Continuous Drain Current (Note 6) V
GS
=4.5V
Pulsed Drain Current (Note 7)
Steady
State
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
Value
12
±8
5.5
4.2
6.6
5.3
30
Units
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
P
D
P
D
R
θJA
R
θJA
T
J,
T
STG
Value
0.92
1.47
136
94
-55 to +150
Units
W
W
°C/W
°C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
(Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
(Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
Reverse Recovery Charge
Reverse Recovery Time
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
(@T
C
= +25°C)
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
|Y
FS
|
V
SD
Q
RR
t
RR
C
ISS
C
OSS
C
RSS
R
G
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
t
D(OFF)
t
F
Min
12
—
—
0.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
0.6
16
20
14
0.7
8
43.6
423
238
41
3
4.2
0.6
0.4
5
10
25
10
Max
—
1.0
±100
1.0
20
23
—
1.0
—
—
550
310
55
—
5.5
—
—
8
—
40
—
Unit
V
µA
nA
V
mΩ
S
V
nC
ns
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
DS
= 6V, V
GS
= 4.5V,
R
G
= 4Ω, I
D
= 1.5A
V
GS
= 4.5V, V
DS
= 6V,
I
D
=1.5A
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 6V, V
GS
= 0V,
f = 1.0MHz
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 9.6V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 1.5A
V
GS
= 2.5V, I
D
= 1.5A
V
DS
= 6V, I
D
= 1.5A
V
GS
= 0V, I
S
= 1.5A
V
DD
= 6V, I
F
= 1.5A,
di/dt =200A/µs
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch
2
(6.45-cm
2
), 2-oz (0.071-mm thick) Cu.
7. 300ms pulse, pulse duty cycle<=2%.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMN1016UCB6
Document number: DS37124 Rev. 5 - 2
2 of 7
www.diodes.com
October 2016
© Diodes Incorporated
DMN1016UCB6
20.0
18.0
16.0
V
GS
= 8.0V
V
GS
= 4.5V
20
V
GS
= 2.0V
V
DS
= 5.0V
18
V
GS
= 2.5V
V
GS
= 4.0V
16
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
14.0
12.0
10.0
8.0
6.0
4.0
2.0
14
12
10
8
6
4
2
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
V
GS
= 1.5V
V
GS
= 1.0V
0.0
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
3
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.025
0.1
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.023
V
GS
= 2.5V
0.08
0.021
0.06
I
D
= 1.5A
0.019
V
GS
= 4.5V
0.04
0.017
0.02
0.015
0
2
4
6
8 10 12 14 16 18
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
0
0
2
3
4
5
6
7
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
1
8
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.03
V
GS
= 4.5V
2
0.028
0.026
0.024
0.022
0.02
0.018
0.016
0.014
0.012
0.01
0
2
6
8 10 12 14 16 18
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
4
20
0.4
-50
-25
0
25
50
75
100
125
150
T
A
= -55°C
T
A
= 125°C
T
A
= 85°C
T
A
= 150°C
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
V
GS
= 2.5V
I
D
= 2.0A
T
A
= 25°C
1.2
V
GS
= 4.5V
I
D
= 5A
0.8
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMN1016UCB6
Document number: DS37124 Rev. 5 - 2
3 of 7
www.diodes.com
October 2016
© Diodes Incorporated
DMN1016UCB6
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.04
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
0
-50
I
D
= 250µA
I
D
= 1mA
0.03
V
GS
= 2.5V
I
D
= 2A
0.02
V
GS
= 4.5V
I
D
= 5A
0.01
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
20
18
I
S
, SOURCE CURRENT (A)
1000
f = 1MHz
16
14
12
10
8
6
T
A
= 85°C
T
A
= 125°C
T
A
= 150°C
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
C
oss
100
C
rss
T
A
= 25°C
4
2
0
0
T
A
= -55°C
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
0
2
4
6
8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
10
8
600
V
GS
GATE THRESHOLD VOLTAGE (V)
P
(PK)
, PEAK TRANSIENT POWER (W)
500
Single Pulse
R
JA
= 125°C/W
R
JA
(t) = R
JA
*r(t)
T
J
- T
A
= P* R
JA
(t)
6
400
4
V
DS
= 6V
I
D
= 1.5A
300
200
2
100
0
0
1
2
3
4
5
6
7
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
8
0
1E-05
0.001
0.1
10
1000
t
1
, PULSE DURATION TIME (sec)
Figure 12 Single Pulse Maximum Power Dissipation
DMN1016UCB6
Document number: DS37124 Rev. 5 - 2
4 of 7
www.diodes.com
October 2016
© Diodes Incorporated
DMN1016UCB6
D = 0.9
D = 0.7
D = 0.5
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R
JA
(t) = r(t) * R
JA
R
JA
= 125°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
10
100
1000
0.00001
0.0001
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
DMN1016UCB6
Document number: DS37124 Rev. 5 - 2
5 of 7
www.diodes.com
October 2016
© Diodes Incorporated
FPGA/CPLD
