DISCONTINUED
A Product Line of
Diodes Incorporated
DMN4027SSS
40V N-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCE INFORMATION
Product Summary
V
(BR)DSS
R
DS(on)
27m @ V
GS
= 10V
47m @ V
GS
= 4.5V
I
D
T
A
= 25C
8.0A
6.1A
Features and Benefits
Low on-resistance
Fast switching speed
“Green” component and RoHS compliant (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
40V
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Motor control
Backlighting
DC-DC Converters
Power management functions
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See diagram below
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
SO-8
D
G
S
Top View
Top View
Equivalent Circuit
Ordering Information
Product
DMN4027SSS-13
Note:
(Note 1)
Marking
N4027SS
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about
Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
N4027SS
YY
WW
= Manufacturer’s Marking
N4027SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-53)
DMN4027SSS
Document Number DS32103 Rev 2 - 3
1 of 8
www.diodes.com
May 2013
© Diodes Incorporated
DISCONTINUED
A Product Line of
Diodes Incorporated
DMN4027SSS
ADVANCE INFORMATION
Maximum Ratings
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
@T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
Value
40
20
8.0
6.5
6.0
37
4.2
37
Unit
V
V
A
A
A
A
Characteristic
(Note 2)
(Note 4)
T
A
= 70°C (Note 4)
(Note 3)
(Note 5)
(Note 4)
(Note 5)
V
GS
= 10V
Pulsed Drain current
V
GS
= 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
Symbol
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 6)
P
D
R
JA
R
JL
T
J
, T
STG
Value
1.56
12.5
2.8
22.5
80
44.5
35
-55 to 150
Unit
W
mW/C
C/W
C
2. AEC-Q101 V
GS
maximum is
16V.
3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note (3), except the device is measured at t
10 sec.
5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMN4027SSS
Document Number DS32103 Rev 2 - 3
2 of 8
www.diodes.com
May 2013
© Diodes Incorporated
DISCONTINUED
A Product Line of
Diodes Incorporated
DMN4027SSS
ADVANCE INFORMATION
Thermal Characteristics
Max Power Dissipation (W)
I
D
Drain Current (A)
10
1
R
DS(on)
Limited
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100 120 140 160
25mm x 25mm
1oz FR4
DC
1s
100ms
10ms
1ms
100µs
100m
10m
1m
100m
Single Pulse
T
amb
=25°C
V
DS
Drain-Source Voltage (V)
1
10
Temperature (°C)
Safe Operating Area
Derating Curve
Thermal Resistance (°C/W)
80
70
60
50
40
30
20
10
0
100µ
Maximum Power (W)
T
amb
=25°C
100
Single Pulse
T
amb
=25°C
D=0.5
10
D=0.2
D=0.1
Single Pulse
D=0.05
1m
10m 100m
Pulse Width (s)
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Transient Thermal Impedance
Pulse Width (s)
Pulse Power Dissipation
DMN4027SSS
Document Number DS32103 Rev 2 - 3
3 of 8
www.diodes.com
May 2013
© Diodes Incorporated
DISCONTINUED
A Product Line of
Diodes Incorporated
DMN4027SSS
ADVANCE INFORMATION
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
Forward Transconductance (Notes 7 & 8)
Diode Forward Voltage (Note 7)
Reverse recovery time (Note 8)
Reverse recovery charge (Note 8)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 9)
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
fs
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
40
1.0
Typ
0.017
0.031
22.8
0.85
12.2
5.4
604
106
59.6
6.3
12.9
2.4
3
3.1
3.1
15.4
7.5
Max
0.5
100
3.0
0.027
0.047
1.1
Unit
V
A
nA
V
Ω
S
V
ns
nC
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
I
D
= 250A, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
I
D
= 250A, V
DS
= V
GS
V
GS
= 10V, I
D
= 7A
V
GS
= 4.5V, I
D
= 6A
V
DS
= 15V, I
D
= 7A
I
S
= 7A, V
GS
= 0V
I
S
= 2.5, di/dt= 100A/s
V
DS
= 20V, V
GS
= 0V
f= 1MHz
V
GS
= 4.5V
V
GS
= 10V
V
DS
= 20V
I
D
= 7A
V
DD
= 20V, V
GS
= 10V
I
D
= 1A, R
G
6.0
7. Measured under pulsed conditions. Pulse width
300s; duty cycle
2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
DMN4027SSS
Document Number DS32103 Rev 2 - 3
4 of 8
www.diodes.com
May 2013
© Diodes Incorporated
DISCONTINUED
A Product Line of
Diodes Incorporated
DMN4027SSS
ADVANCE INFORMATION
Typical Characteristics
10V
4.5V
T = 25°C
T = 150°C
10V
I
D
Drain Current (A)
I
D
Drain Current (A)
10
3.5V
10
4V
3.5V
3V
1
3V
V
GS
1
2.5V
0.1
2.5V
0.1
2V
V
GS
0.01
0.1
V
DS
Drain-Source Voltage (V)
1
10
0.01
0.1
Output Characteristics
V
DS
Drain-Source Voltage (V)
1
10
Output Characteristics
V
GS
= 10V
I
D
= 12A
1.6
Normalised R
DS(on)
and V
GS(th)
V
DS
= 10V
I
D
Drain Current (A)
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
1
T = 150°C
T = 25°C
R
DS(on)
0.1
0.01
V
GS
= V
DS
I
D
= 250uA
V
GS(th)
1E-3
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance (
)
10
T = 25°C
3V
3.5V
V
GS
Gate-Source Voltage (V)
1
2
3
Tj Junction Temperature (°C)
50
100
150
Normalised Curves v Temperature
10
1
0.1
0.01
Vgs = 0V
T = 150°C
1
I
SD
Reverse Drain Current (A)
V
GS
T = 25°C
0.1
4V
4.5V
10V
0.01
0.01
0.1
On-Resistance v Drain Current
I
D
Drain Current (A)
1
10
V
SD
Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1E-3
0.2
0.4
0.6
0.8
1.0
DMN4027SSS
Document Number DS32103 Rev 2 - 3
5 of 8
www.diodes.com
May 2013
© Diodes Incorporated
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