DMP3065LVT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
ADVANCE INFORMATION
V
(BR)DSS
-30V
R
DS(ON)
max
42mΩ @ V
GS
= -10V
65mΩ @ V
GS
= -4.5V
I
D
max
T
A
= +25°C
-5.1A
-4.0A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.015 grams (Approximate)
TSOT26
D
D
G
1
2
3
6
5
4
D
D
S
ESD PROTECTED
Top View
Top View
Internal Schematic
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP3065LVT-7
DMP3065LVT-13
Notes:
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
65P = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
̅
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
2012
Z
Mar
3
2013
A
Apr
4
May
5
2014
B
Jun
6
2015
C
Jul
7
Aug
8
2016
D
Sep
9
2017
E
Oct
O
Nov
N
2018
F
Dec
D
DMP3065LVT
Document number: DS36697 Rev. 4 - 2
1 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMP3065LVT
Maximum Ratings
P-Channel
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
V
GSS
Steady
State
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
I
D
I
D
I
S
Value
-30
±20
-5.1
-4.2
-4.0
-3.2
-2.0
Units
V
V
A
A
A
ADVANCE INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= -10V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Maximum Body Diode Continuous Current
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
P
D
R
θJA
P
D
R
θJA
T
J,
T
STG
Value
1.2
102
1.6
78
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics
P-Channel
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
@T
J
= +25°C
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-30
—
—
-1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
-1.7
34
52
8.5
-0.75
587
160
84
6.3
12.3
1.9
2.5
5.7
11.8
21.8
23.9
Max
—
-1
±10
-2.1
42
65
—
-1.2
880
240
130
10
20
4
5
10
22
35
40
Unit
V
μA
μA
V
mΩ
S
V
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -24V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -4.9A
V
GS
= -4.5V, I
D
= -3.7A
V
DS
= -5V, I
D
= -4.9A
V
GS
= 0V, I
S
= -1A
pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
nC
V
DS
= -15V, I
D
= -4.9A
ns
V
DD
= -15V, V
GS
= -10V,
I
D
= -4.9A, R
G
= 6Ω
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP3065LVT
Document number: DS36697 Rev. 4 - 2
2 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMP3065LVT
20.0
18.0
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4.0V
20
V
DS
= -5.0V
18
16
-I
D
, DRAIN CURRENT (A)
ADVANCE INFORMATION
-I
D
, DRAIN CURRENT (A)
16.0
14.0
12.0
V
GS
= -3.5V
14
12
10
8
6
4
T
A
= 150
C
T
A
= 125
C
10.0
8.0
6.0
V
GS
= -3.0V
4.0
2.0
V
GS
= -2.5V
T
A
= 85
C
T
A
= 25
C
T
A
= -55
C
2
5
0.0
0
1
2
3
4
-V
DS
, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0
0
1
2
3
4
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.1
0.5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
2
4
6
8 10 12 14 16 18
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
20
I
D
= -4.9A
I
D
= -3.7A
0.08
0.06
V
GS
= -4.5V
0.04
V
GS
= -10V
0.02
0
0
2
4
6
8 10 12 14 16 18
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.14
0.12
0.1
0.08
0.06
0.04
T
A
= -55
C
T
A
= 150
C
T
A
= 125
C
T
A
= 85
C
T
A
= 25
C
1.8
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
V
GS
= -10V
I
D
= -4.9A
1.4
1.2
V
GS
= -4.5V
I
D
= -3.7A
1
0.02
0
2
4
6
8 10 12 14 16 18
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
20
0.8
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMP3065LVT
Document number: DS36697 Rev. 4 - 2
3 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMP3065LVT
0.1
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
R
DS(on)
, DRAIN-SOURCE ON-RESISTANCE (
)
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
-50
-I
D
= 250µA
ADVANCE INFORMATION
0.08
V
GS
= -4.5V
I
D
= -3.7A
-I
D
= 1mA
0.06
0.04
V
GS
= -10V
I
D
= -4.9A
0.02
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
20
18
-I
S
, SOURCE CURRENT (A)
10000
f = 1MHz
16
14
12
10
8
6
T
A
= -55°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
C
T
, JUNCTION CAPACITANCE (pF)
1000
C
iss
100
C
oss
C
rss
4
2
0
0
10
0.3
0.6
0.9
1.2
1.5
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
0
5
10
15
20
25
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
30
10
100
R
DS(on)
Limited
P
W
= 100µs
V
GS
, GATE-SOURCE VOLTAGE (V)
8
6
V
DS
= 15V
I
D
= 4.9A
I
D
, DRAIN CURRENT (A)
10
DC
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
4
0.1
T
J (m ax )
= 150°C
T
A
= 25°C
P
W
= 10ms
P
W
= 1ms
2
0
V
GS
= 10V
Single Pulse
0.01
DUT on 1 * MRP Board
0
4
6
8
10
12
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
2
14
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMP3065LVT
Document number: DS36697 Rev. 4 - 2
4 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMP3065LVT
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
ADVANCE INFORMATION
r(t), TRANSIENT THERMAL RESISTANCE
0.1
D =
0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
thja
(t) = r(t) * R
thja
Single Pulse
0.001
0.00001
R
thja
= 96°C/W
Duty Cycle, D = t1/ t2
0.001
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
0.01
10
100
1000
0.0001
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
e1
E1
E
c
4x
1
6x b
L
L2
e
A
A2
A1
TSOT26
Dim Min Max Typ
A
1.00
A1
0.01 0.10
A2
0.84 0.90
D
2.90
E
2.80
E1
1.60
b
0.30 0.45
c
0.12 0.20
e
0.95
e1
1.90
L
0.30 0.50
L2
0.25
θ
0°
8°
4°
θ1
4°
12°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
C
Y1
Dimensions Value (in mm)
C
0.950
X
0.700
Y
1.000
Y1
3.199
Y (6x)
X (6x)
DMP3065LVT
Document number: DS36697 Rev. 4 - 2
5 of 6
www.diodes.com
December 2014
© Diodes Incorporated
