DMP3099L
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
-30V
R
DS(ON)
max
65mΩ @ V
GS
= -10V
99mΩ @ V
GS
= -4.5V
I
D
max
T
A
= +25°C
-3.8A
-3.0A
Features and Benefits
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
NEW PRODUCT
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
e3
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
UL
Applications
Backlighting
Power Management Functions
DC-DC Converters
SOT23
D
G
S
Top View
Equivalent Circuit
Top View
Pin Configuration
Ordering Information
(Note 4)
Part Number
DMP3099L-7
DMP3099L-13
Notes:
Compliance
Standard
Standard
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
D99= Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
D99
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
Feb
2
2009
W
Mar
3
2010
X
Apr
4
May
5
YM
2011
Y
Jun
6
2012
Z
Jul
7
Aug
8
2013
A
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
May 2013
© Diodes Incorporated
DMP3099L
Document number: DS36081 Rev. 3 - 2
1 of 6
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DMP3099L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) V
GS
= -10V
Pulsed Drain Current (Note 6)
Steady
State
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
-30
±20
-3.8
-2.9
-11
Units
V
V
A
A
NEW PRODUCT
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J,
T
STG
Value
1.08
115
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
G
Min
-30
—
—
-1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
3.6
—
563
48
41
10.3
5.2
11
1.7
1.9
4.8
5.0
31
15
Max
—
-800
±100
-2.1
65
99
—
-1.26
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
nA
nA
V
mΩ
S
V
pF
pF
pF
Ω
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -3.8A
V
GS
= -4.5V, I
D
= -3.0A
V
DS
= -5V, I
D
= -2.7A
V
GS
= 0V, I
S
= -2.7A
V
DS
= -25V, V
GS
= 0V,
f = 1.0MHz
V
GS
= 0V V
DS
= 0V, f = 1MHz
V
DS
= -15V, V
GS
= -4.5V,
I
D
= -3.8A
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
V
DS
= -15V, V
GS
= -10V,
I
D
= -3.8A
V
DS
= -15V, V
GS
= -10V,
I
D
= -1A, R
G
= 6.0Ω
ns
5. Device mounted on FR-4 PCB on 2 oz., 0.5 in.
2
copper pads and t
≤5
sec.
6. Pulse width
≤10µS,
Duty Cycle
≤1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP3099L
Document number: DS36081 Rev. 3 - 2
2 of 6
www.diodes.com
May 2013
© Diodes Incorporated
DMP3099L
20.0
V
GS
= -10V
20
V
DS
= -5.0V
V
GS
= -4.0V
T
A
= 85°C
T
A
= 150°C
T
A
= 25°C
T
A
= 125°C
T
A
= -55°C
I
D
, DRAIN CURRENT (A)
12.0
-I
D
, DRAIN CURRENT (A)
16.0
V
GS
= -4.5V
16
12
8.0
V
GS
= -3.0V
8
NEW PRODUCT
4.0
V
GS
= -2.5V
V
GS
= -2.0V
4
0.0
0
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
1
5
0
0
1
2
3
4
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
6
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1
0.4
V
GS
= -4.5V
0.35
0.3
T
A
= 150°C
0.25
0.2
0.15
0.1
T
A
= 25°C
T
A
= 125°C
T
A
= 85°C
0.1
V
GS
= -4.5V
V
GS
= -10V
0.05
0
T
A
= -55°C
0.01
0
4
8
12
16
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
0
8
12
16
-I
D
, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
4
20
1.8
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
2
V
GS
= -10V
I
D
= -5.3A
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
-50
V
GS
= 10V
I
D
= 5.3A
V
GS
= 4.5V
I
D
= 4.2A
V
GS
= -4.5V
I
D
= -4.2A
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (
C)
Figure 5 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMP3099L
Document number: DS36081 Rev. 3 - 2
3 of 6
www.diodes.com
May 2013
© Diodes Incorporated
DMP3099L
2.4
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
20
16
I
D
= -1mA
1.6
I
D
= -250µA
I
S
, SOURCE CURRENT (A)
12
T
A
= 25°C
8
NEW PRODUCT
0.8
4
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (
C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
-50
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10
V
GS
GATE THRESHOLD VOLTAGE (V)
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
V
DS
= 15V
I
D
= 3.8A
1000
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
100
C
oss
C
rss
f = 1MHz
10
0
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
DMP3099L
Document number: DS36081 Rev. 3 - 2
4 of 6
www.diodes.com
May 2013
© Diodes Incorporated
DMP3099L
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
B C
H
K
J
F
D
G
L
K1
M
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
-
-
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
-
All Dimensions in mm
NEW PRODUCT
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
2.0
C
1.35
E
X
E
DMP3099L
Document number: DS36081 Rev. 3 - 2
5 of 6
www.diodes.com
May 2013
© Diodes Incorporated
