DN3545
N-Channel Depletion-Mode
Vertical DMOS FET
Features
►
►
►
►
►
►
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
General Description
These depletion-mode (normally-on) transistors utilize an
advanced vertical DMOS structure and Supertex’s well-
proven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
►
►
►
►
►
►
►
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
300
O
C
Package Options
D
S G D
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
G
D
S
TO-92
(front view)
TO-243AA
(top view)
Ordering Information
BV
DSX
/
BV
DGX
450V
R
DS(ON)
(max)
(min)
I
DSS
Package Options
TO-92
DN3545N3
TO-243AA (SOT-89)
DN3545N8
DN3545N8-G
20Ω
200mA
DN3545N3-G
-G indicates package is RoHS compliant (‘Green’)
DN3545
Thermal Characteristics
Package
T0-92
TO-243AA
Notes:
1. I
D
(continuous) is limited by max rated T
j
.
2. Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
I
D
(continuous)
1
136mA
200mA
I
D
(pulsed)
550mA
550mA
Power Dissipation
@T
A
= 25
O
C
0.74W
1.6W
2
O
θ
jc
C/W
O
θ
ja
C/W
I
DR1
136mA
200mA
I
DRM
550mA
550mA
125
15
170
78
2
Electrical Characteristics
(@25 C unless otherwise specified)
O
Symbol
BV
DSX
V
GS(OFF)
ΔV
GS(OFF)
I
GSS
I
D(OFF)
I
DSS
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
Drain-to-source breakdown voltage
Gate-to-source OFF voltage
Change in V
GS(OFF)
with temperature
Gate body leakage current
Drain-to-source leakage current
Saturated drain-to-source current
Static drain-to-source
on-state resistance
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Min
450
-1.5
-
-
-
-
200
-
-
150
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
800
Max
-
-3.5
4.5
100
1.0
1.0
-
20
1.1
-
360
40
15
20
30
30
40
1.8
-
Units
V
V
Conditions
V
GS
= -5V, I
D
= 100µA
V
DS
= 25V, I
D
= 10µA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= -5V, V
DS
= Max Rating
V
GS
= -5V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 0V, V
DS
= 15V
V
GS
= 0V, I
D
= 150mA
V
GS
= 0V, I
D
= 150mA
I
D
= 100mA, V
DS
= 10V
V
GS
= -5V, V
DS
= 25V, f = 1MHz
mV/
O
C V
DS
= 25V, I
D
= 10µA
nA
µA
mA
mA
Ω
%/
O
C
m
Ω
pF
ns
V
DD
= 25V, I
D
= 150mA,
R
GEN
= 25Ω,V
GS
= 0V to -10V
V
ns
V
GS
= -5V, I
SD
= 150mA
V
GS
= -5V, I
SD
= 150mA
V
DD
Switching Waveforms and Test Circuit
0V
90%
INPUT
-10V
R
L
PULSE
GENERATOR
R
gen
OUTPUT
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
D.U.T.
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
DN3545
Typical Performance Curves
Output Characteristics
0.7
V
GS
= +2.0V
1.0V
0V
-0.5V
0.6
Saturation Characteristics
V
GS
= +2V
+1.0V
0V
-0.5V
0.6
0.5
I
D
(Amperes)
0.5
I
D
(Amperes)
0.4
-0.8V
0.4
-0.8V
-1.0V
0.2
0.3
0.3
-1.0V
0.2
0.1
-1.5V
0
0
50
100 150 200 250 300 350 400 450
0.1
-1.5V
0
0
2
4
6
8
10
V
DS
(Volts)
Transconductance vs. Drain Current
0.8
V
DS
= 10V
T
A
= -55
o
C
TO-243AA
1.5
V
DS
(Volts)
Power Dissipation vs. Ambient Temperature
2.0
G
FS
(siemens)
0.6
PD (watts)
T
A
= 25
o
C
0.4
1.0
TO-92
T
A
= 125
o
C
0.2
0.5
0
0
0.1
0.2
0.3
0.4
0
0
25
50
75
100
125
150
I
D
(Amperes)
Maximum Rated Safe Operating Area
1.0
1.0
T
A
(
o
C)
Thermal Response Characteristics
Thermal Resistance (normalized)
TO-243AA (Pulsed)
TO-92 (Pulsed)
TO-243AA (DC)
TO-243AA
0.8
T
A
= 25
o
C
P
D
= 1.6W
I
D
(Amperes)
0.1
TO-92 (DC)
0.6
0.4
0.01
0.2
TO-92
T
C
= 25
o
C
P
D
= 1.0W
0.01
0.1
1
10
0.001
1
T
A
=25
o
C
10
100
1000
0
0.001
V
DS
(Volts)
3
t
p
(seconds)
DN3545
Typical Performance Curves (cont.)
BV
DSS
Variation with Temperature
1.2
ID = 100µA
VGS = -5V
40
50
On Resistance vs. Drain Current
BVDSS (Normalized)
R
DS(ON)
(ohms)
1.1
30
1.0
20
0.9
10
V
GS
= 0V
0.8
-50
0
0
50
100
150
0
0.2
0.4
0.6
0.8
TJ (
o
C)
Transfer Characteristics
1.0
I
D
(Amperes)
V
GS(OFF)
and R
DS(ON)
w/ Temperature
1.5
2.4
V
DS
= 10V
TA = -55
o
C
V
GS(OFF)
(normalized)
0.6
TA = 25
o
C
1.1
V
GS(OFF)
@ 10µA
1.6
0.4
TA = 125
o
C
0.9
1.2
0.2
0.7
R
DS(ON)
@ 0V, 150mA
0.8
0
-3
-2
-1
0
1
2
0.5
-50
0
50
100
0.4
150
V
GS
(Volts)
Capacitance vs. Drain Source Voltage
300
T
J
(
o
C)
Gate Drive Dynamic Characteristics
3
V
GS = -5V
2
250
I
D = 150mA
1
C (picofarads)
200
V
DS = 30V
V
GS
(volts)
0
-1
-2
-3
150
C
ISS
100
50
C
RSS
0
0
10
20
30
C
OSS
40
-4
-5
0
1
2
3
4
5
6
V
DS
(Volts)
Q
G
(Nanocoulombs)
4
R
DS(ON)
(normalized)
0.8
1.3
2.0
I
D
(Amperes)
DN3545
3-Lead TO-92 Surface Mount Package (N3)
0.135 MIN
0.125 - 0.165
0.080 - 0.105
1
2
3
Top View
0.175 - 0.205
0.170 - 0.210
1 2 3
Seating Plane
0.500 MIN
0.014 - 0.022
0.014 - 0.022
0.045 - 0.055
0.095 - 0.105
Front View
Side View
Notes:
All dimensions are in millimeters; all angles in degrees.
5
