DPG15I300PA
HiPerFRED
V
RRM
I
FAV
t
rr
=
=
=
300 V
15 A
35 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPG15I300PA
Backside: cathode
3
1
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
Package:
TO-220
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160720b
© 2016 IXYS all rights reserved
DPG15I300PA
Fast Diode
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
0.69
18
0.50
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
= 150 V f = 1 MHz
I
F
=
15 A; V = 200 V
T
VJ
= 45°C
T
VJ
= 25°C
T
VJ
= 25 °C
T
VJ
= 125 °C
T
VJ
= 25 °C
T
VJ
= 125 °C
-d
F
/dt = 200 A/µs
20
3
6.5
35
55
90
240
V
mΩ
K/W
W
A
pF
A
A
ns
ns
min.
typ.
max. Unit
300
V
300
1
0.08
1.26
1.51
1.01
1.29
15
V
µA
mA
V
V
V
V
A
max. non-repetitive reverse blocking voltage
V
R
= 300 V
V
R
= 300 V
I
F
=
I
F
=
I
F
=
I
F
=
15 A
30 A
15 A
30 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
I
RM
t
rr
average forward current
T
C
= 145 °C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
1.7 K/W
reverse recovery time
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160720b
© 2016 IXYS all rights reserved
DPG15I300PA
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
mounting torque
mounting force with clip
TO-220
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-55
-55
-55
typ.
max.
35
175
150
150
Unit
A
°C
°C
°C
g
Nm
N
2
0.4
20
0.6
60
Product Marking
Part description
D
P
G
15
I
300
PA
=
=
=
=
=
=
=
Diode
HiPerFRED
extreme fast
Current Rating [A]
Single Diode
Reverse Voltage [V]
TO-220AC (2)
Part Number
Logo
Assembly Line
Lot #
Date Code
XXXXXX
Zyyww
abcdef
Ordering
Standard
Ordering Number
DPG15I300PA
Marking on Product
DPG15I300PA
Delivery Mode
Tube
Quantity
50
Code No.
506633
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Fast
Diode
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
0.69
14.8
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160720b
© 2016 IXYS all rights reserved
DPG15I300PA
Outlines TO-220
= supplier option
A
Dim.
A
A1
A2
b
b2
C
D
E
e
H1
L
L1
ØP
Q
Q
E
A1
Millimeter
Min.
Max.
4.32
1.14
2.29
0.64
1.15
0.35
14.73
9.91
5.08
5.85
12.70
2.79
3.54
2.54
4.82
1.39
2.79
1.01
1.65
0.56
16.00
10.66
BSC
6.85
13.97
5.84
4.08
3.18
Inches
Min.
Max.
0.170
0.045
0.090
0.025
0.045
0.014
0.580
0.390
0.200
0.230
0.500
0.110
0.139
0.100
0.190
0.055
0.110
0.040
0.065
0.022
0.630
0.420
BSC
0.270
0.550
0.230
0.161
0.125
ØP
4
1
3
2x b2
L1
2x b
e
L
D
H1
C
A2
3
1
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160720b
© 2016 IXYS all rights reserved
DPG15I300PA
Fast Diode
80
70
60
0.4
T
VJ
= 25°C
150°C
0.5
T
VJ
= 125°C
V
R
= 200 V
30 A
16
14
12
T
VJ
= 125°C
V
R
= 200 V
30 A
15 A
I
F
[A]
50
40
30
20
10
0
0.0
Q
rr
0.3
15 A
I
RM
10
7.5 A
[μC]
0.2
7.5 A
[A]
8
6
0.1
0.5
1.0
1.5
2.0
2.5
0
100 200 300 400 500 600
4
0
100 200 300 400 500 600
V
F
[V]
Fig. 1 Forward current
I
F
versus V
F
1.4
1.2
1.0
0.8
60
-di
F
/dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Q
rr
versus -di
F
/dt
70
T
VJ
= 125°C
I
F
= 30 A
15 A
7.5 A
-di
F
/dt [A/μs]
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
16
400
T
VJ
= 125°C
I
F
= 15 A
V
R
= 200 V
300
V
R
= 200 V
14
12
K
f
0.6
0.4
0.2
0.0
0
t
rr
I
RM
50
V
FR
[V]
40
10
8
6
4
2
V
FR
t
fr
200
[ns]
[ns]
t
fr
100
Q
rr
30
20 40 60 80 100 120 140 160
0
100 200 300 400 500 600
0
0
0
100 200 300 400 500 600
T
VJ
[°C]
Fig. 4 Typ. dynamic parameters
Q
rr
, I
RM
versus T
VJ
16
14
12
T
VJ
= 125°C
V
R
= 200 V
15 A
-di
F
/dt [A/μs]
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
1.8
1.6
1.4
-di
F
/dt [A/μs]
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
I
F
= 30 A
E
rec
10
8
7.5 A
Z
thJC
1.2
[K/W]
1.0
[μJ]
6
4
2
0
0
100 200 300 400 500 600
0.8
0.6
0.4
1
10
100
1000
10000
-diF/dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
IXYS reserves the right to change limits, conditions and dimensions.
t [ms]
Fig. 8 Transient thermal resistance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20160720b
© 2016 IXYS all rights reserved
