DPG30C300HB
HiPerFRED²
V
RRM
I
FAV
t
rr
=
= 2x
=
300 V
15 A
35 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG30C300HB
Backside: cathode
1
2
3
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
Package:
TO-247
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
© 2013 IXYS all rights reserved
DPG30C300HB
Fast Diode
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
0.69
17.3
1.7
0.25
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
= 150 V f = 1 MHz
I
F
=
15 A; V
R
= 200 V
T
VJ
= 45°C
T
VJ
= 25°C
T
VJ
= 25 °C
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= 125°C
-di
F
/dt = 200 A/µs
20
3
6.5
35
55
90
240
V
mΩ
K/W
K/W
W
A
pF
A
A
ns
ns
min.
typ.
max.
300
300
1
0.08
1.25
1.50
1.00
1.27
15
Unit
V
V
µA
mA
V
V
V
V
A
max. non-repetitive reverse blocking voltage
V
R
= 300 V
V
R
= 300 V
I
F
=
I
F
=
I
F
=
I
F
=
15 A
30 A
15 A
30 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
I
RM
t
rr
average forward current
T
C
= 145°C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
reverse recovery time
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
© 2013 IXYS all rights reserved
DPG30C300HB
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
mounting torque
mounting force with clip
TO-247
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
1)
min.
-55
-55
-55
typ.
max.
50
175
150
150
Unit
A
°C
°C
°C
g
Nm
N
6
0.8
20
1.2
120
Product Marking
Part number
D
P
G
30
C
300
HB
=
=
=
=
=
=
=
Diode
HiPerFRED
extreme fast
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-247AD (3)
Logo
Part No.
Assembly Line
Assembly Code
Date Code
IXYS
XXXXXXXXX
Zyyww
abcd
Ordering
Standard
Part Number
DPG30C300HB
Marking on Product
DPG30C300HB
Delivery Mode
Tube
Quantity
30
Code No.
502567
Similar Part
DPG30C300PB
DPG30C300PC
Package
TO-220AB (3)
TO-263AB (D2Pak) (2)
Voltage class
300
300
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Fast
Diode
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
0.69
14.7
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
© 2013 IXYS all rights reserved
DPG30C300HB
Outlines TO-247
E
Q
A
A2
S
D1
D
2x
E2
Ø
P
Ø
P1
D2
Sym.
Inches
min.
max.
Millimeter
min.
max.
4
1
L1
L
2
3
E1
2x
b2
b4
2x
e
3x
b
C
A1
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
Ø P1
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.215 BSC
0.780 0.800
-
0.177
0.140 0.144
0.212 0.244
0.242 BSC
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.515
-
0.020 0.053
0.530
-
-
0.29
4.70
5.30
2.21
2.59
1.50
2.49
20.79 21.45
15.48 16.24
4.31
5.48
5.46 BSC
19.80 20.30
-
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
-
0.51
1.35
13.45
-
-
7.39
1
2
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
© 2013 IXYS all rights reserved
DPG30C300HB
Fast Diode
80
0.5
T
VJ
= 125°C
V
R
= 200 V
60
0.4
12
T
VJ
= 25°C
150°C
40
15 A
30 A
16
14
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
I
F
[A]
20
Q
rr
0.3
7.5 A
I
RM
10
8
[μC]
0.2
[A]
6
4
0.1
2
0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
0
100 200 300 400 500 600
0
0
T
VJ
= 125°C
V
R
= 200 V
100 200 300 400 500 600
V
F
[V]
Fig. 1 Forward current
I
F
versus V
F
1.4
1.2
60
1.0
0.8
-di
F
/dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Q
rr
versus -di
F
/dt
70
T
VJ
= 125°C
V
R
= 200 V
14
12
50
I
F
= 30 A
16
-di
F
/dt [A/μs]
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
400
T
VJ
= 125°C
I
F
= 15 A
V
R
= 200 V
300
K
f
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 140 160
Q
rr
I
RM
t
rr
V
FR
[V]
10
8
t
fr
200
[ns]
40
15 A
30
7.5 A
6
4
2
V
FR
t
fr
[ns]
100
20
0
100 200 300 400 500 600
0
0
0
100 200 300 400 500 600
T
VJ
[°C]
Fig. 4 Typ. dynamic parameters
Q
rr
, I
RM
versus T
VJ
-di
F
/dt [A/μs]
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
-di
F
/dt [A/μs]
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
16
14
12
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
1.8
1.6
1.4
E
rec
[μJ]
10
8
6
4
2
0
0
ZthJC
1.2
[K/W]
1.0
0.8
T
VJ
= 125°C
V
R
= 200 V
100 200 300 400 500 600
0.6
1
10
100
1000
10000
-di
F
/dt [A/μs]
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
IXYS reserves the right to change limits, conditions and dimensions.
t [ms]
Fig. 8 Transient thermal resistance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
© 2013 IXYS all rights reserved
FPGA/CPLD
