DRDNB21D
COMPLEX ARRAY FOR DUAL RELAY DRIVER
Features and Benefits
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Epitaxial Planar Die Construction
Two Pre-Biased Transistors and Two Switching Diodes,
Internally Connected in One Package
Ideally Suited for Automated Assembly Processes
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
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Case: SOT-363
Case Material: Molded Plastic. "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0062 grams (approximate)
R1 = R3 = 2.2kΩ (nominal)
R2 = R4 = 47kΩ (nominal)
6
5
4
5
D1
R1
R3
D2
3
R3
1
R1
R2
R4
6
R2
Q1
Q2
R4
4
1
2
3
2
Top View
Top View
Device Circuit
Ordering Information
(Note 3)
Device
DRDNB21D-7
Notes:
Packaging
SOT-363
Shipping
3000/Tape & Reel
1. No purposefully added lead.
2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, visit our website at http://www.diodes.com.
Marking Information
RD08
RD08 = Product Type Marking Code
YM = Date Code Marking
Y = Year (e.g. T = 2006)
M = Month (e.g. 1 = January)
Date Code Key
Year
2005
Code
S
Month
Code
Jan
1
2006
T
Feb
2
2007
U
Mar
3
2008
V
Apr
4
2009
W
May
5
YM
2010
X
2011
Y
Jul
7
2012
Z
Aug
8
2013
A
Sep
9
2014
B
Oct
O
2015
C
Nov
N
2016
D
Dec
D
Jun
6
DRDNB21D
Document number: DS30756 Rev. 6 - 2
1 of 7
www.diodes.com
February 2011
© Diodes Incorporated
DRDNB21D
Maximum Ratings
, Total Device
@T
A
= 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient Air (Note 4)
Operating and Storage Junction Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
200
625
-55 to +150
Unit
mW
°C/W
°C
Maximum Ratings
, Pre-Biased NPN Transistor
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Emitter Voltage
Base-Emitter Voltage
Output Current
Peak Collector Current
Symbol
V
CC
V
in
I
O
I
CM
Value
50
-5 to +12
100
100
Unit
V
V
mA
mA
Maximum Ratings, Switching Diode
@T
A
= 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 4)
Average Rectified Output Current (Note 4)
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
Value
100
75
53
500
250
4.0
1.0
Unit
V
V
V
mA
mA
A
Electrical Characteristics, Pre-Biased NPN Transistor
@T
A
= 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product*
*
Transistor - For Reference Only
Symbol
V
l(off)
V
l(on)
V
O(on)
I
l
I
O(off)
G
l
ΔR1
ΔR2/R1
f
T
Min
0.5
⎯
⎯
⎯
⎯
80
-30
-20
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
250
Max
⎯
1.1
0.3
3.6
0.5
⎯
+30
+20
⎯
Unit
V
V
V
mA
uA
⎯
%
%
MHz
Test Condition
V
CC
= 5V, I
O
= 100μA
V
O
= 0.3V, I
O
= 5mA
I
O
/I
l
= 50mA/0.25mA
V
I
= 5V
V
CC
= 50V, V
I
= 0V
V
O
= 5V, I
O
= 10mA
-
-
V
CE
= 10V, I
E
= 5mA, f = 100MHz
Electrical Characteristics, Switching Diode
Characteristic
Reverse Breakdown Voltage (Note 5)
Symbol
V
(BR)R
V
F
@T
A
= 25°C unless otherwise specified
Min
75
0.62
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
0.72
0.855
1.0
1.25
2.5
50
30
25
4.0
4.0
Unit
V
Test Condition
I
R
= 10μA
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
J
= 150°C
V
R
= 25V, T
J
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA, I
rr
= 0.1 x I
R
, R
L
= 100Ω
Forward Voltage
V
μA
μA
μA
nA
pF
ns
Reverse Current (Note 5)
I
R
C
T
t
rr
Total Capacitance
Reverse Recovery Time
Notes:
4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com
5. Short duration pulse test used to minimize self-heating effect.
DRDNB21D
Document number: DS30756 Rev. 6 - 2
2 of 7
www.diodes.com
February 2011
© Diodes Incorporated
DRDNB21D
Device Characteristics
250
P
D
, POWER DISSIPATION (mW)
200
Note 4
150
100
50
0
0
120
40
80
160
200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve (Total Device)
Pre-Biased NPN Transistor Elements
1
I
C
/I
B
= 10
1,000
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
T
A
= 75
°
C
T
A
= -25
°
C
T
A
= 25
°
C
h
FE
, DC CURRENT GAIN
100
0.01
0.001
0
10
40
20
30
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 Typical V
CE(SAT)
vs. I
C
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain
100
DRDNB21D
Document number: DS30756 Rev. 6 - 2
3 of 7
www.diodes.com
February 2011
© Diodes Incorporated
DRDNB21D
Pre-Biased NPN Transistor Elements
- continued
100
10
I
C
, COLLECTOR CURRENT (mA)
10
V
in
, INPUT VOLTAGE (V)
0
8
9 10
6
7
3
4
5
V
in
, INPUT VOLTAGE (V)
Fig. 4 Typical Collector Current vs. Input Voltage
2
1
I
E
= 0mA
f = 1MHz
1
1
0.1
0.01
0.001
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical Input Voltage vs. Collector Current
4
C
OB
, CAPACITANCE (pF)
3
2
1
0
0
10
15
25
20
5
V
R
, REVERSE BIAS VOLTAGE (V)
Fig. 6 Typical Output Capacitance
30
DRDNB21D
Document number: DS30756 Rev. 6 - 2
4 of 7
www.diodes.com
February 2011
© Diodes Incorporated
DRDNB21D
Switching Diode Elements
I
F
, INSTANTANEOUS FORWARD CURRENT (mA)
I
R
, INSTANTANEOUS REVERSE CURRENT (nA)
1,000
10,000
1,000
100
100
10
10
1
1
0.1
0
1.2
0.4
0.8
1.6
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 7 Typical Forward Characteristics
0.1
0
60
80
20
40
V
R
, REVERSE VOLTAGE (V)
Fig. 8 Typical Reverse Characteristics
100
3.0
f = 1MHz
C
T
, TOTAL CAPACITANCE (pF)
2.5
2.0
1.5
1.0
0.5
0
0
10
20
40
30
V
R
, REVERSE VOLTAGE (V)
Fig. 9 Typical Capacitance vs. Reverse Voltage
Typical Application Circuit
L1
Relay1
D1
RL1
Typical Application Circuit DRDNB21D with two independent relays.
DRDNB21D
Document number: DS30756 Rev. 6 - 2
5 of 7
www.diodes.com
February 2011
© Diodes Incorporated
