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DS2102SV18

Rectifier Diode, 1 Phase, 1 Element, 6654A, 1800V V(RRM), Silicon, V, 2 PIN

器件类别：分立半导体    二极管   

厂商名称：Dynex

厂商官网：http://www.dynexsemi.com/

器件标准：  

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Dynex
包装说明
O-CEDB-N2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE
应用
GENERAL PURPOSE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
O-CEDB-N2
最大非重复峰值正向电流
100000 A
元件数量
1
相数
1
端子数量
2
最大输出电流
6654 A
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
ROUND
封装形式
DISK BUTTON
峰值回流温度（摄氏度）
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
1800 V
表面贴装
YES
端子形式
NO LEAD
端子位置
END
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
DS2102SY/DS2102SV
DS2102SY/DS2102SV
Rectifier Diode
Replaces December 2001 version, DS4171-5.1
DS4171-6.0 February 2003
FEATURES
I
Double Side Cooling
I
High Surge Capability
KEY PARAMETERS
V
RRM
2000V
I
F(AV)
6654A
I
FSM
100000A
APPLICATIONS
I
Rectification
I
Freewheel Diode
I
DC Motor Control
I
Power Supplies
I
Welding
I
Battery Chargers
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
Conditions
DS2102SY20
2000
DS2102SY19
1900
DS2102SY18
1800
DS2102SY17
1700
DS2102SY16
1600
DS2102SY15
1500
Lower voltage grades available.
V
RSM
= V
RRM
+ 100V
Outline type code: Y
Outline type code: V
See Package Details for further information.
Fig. 1 Package outlines
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS2102SY18
for a 1800V device in a Y outline
or
DS2102SV37
for a 1800V device in a V outline
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
1/8
www.dynexsemi.com
DS2102SY/DS2102SV
CURRENT RATINGS
T
case
= 75
o
C unless otherwise stated
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load
-
-
6654
10452
9275
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load
-
-
4227
6640
5403
A
A
A
T
case
= 100
o
C unless otherwise stated
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load
-
-
5460
8575
7450
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load
-
-
3410
5356
4260
A
A
A
2/8
www.dynexsemi.com
DS2102SY/DS2102SV
SURGE RATINGS
Symbol
I
FSM
I
2
t
I
FSM
I
2
t
Parameter
Surge (non-repetitive) forward current
I
2
t for fusing
Surge (non-repetitive) forward current
I
2
t for fusing
Conditions
10ms half sine; T
case
= 175
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
=175
o
C
V
R
= 0
Max.
80.0
32 x 10
6
100.0
50 x 10
6
Units
kA
A
2
s
kA
A
2
s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 43.0kN
with mounting compound
Forward (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Clamping force
-
-55
38.0
175
175
47.0
o
Min.
dc
Anode dc
-
-
-
-
-
-
Max.
0.0095
0.019
0.019
0.002
0.004
200
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
Double side
Single side
o
R
th(c-h)
Thermal resistance - case to heatsink
o
C
C
C
o
kN
3/8
www.dynexsemi.com
DS2102SY/DS2102SV
CHARACTERISTICS
Symbol
V
FM
I
RM
Q
S
I
rr
V
TO
r
T
Parameter
Forward voltage
Peak reverse current
Total stored charge
Peak reverse recovery current
Threshold voltage
Slope resistance
Conditions
At 3000A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 175
o
C
I
F
= 2000A, dI
RR
/dt = 3A/µs
T
case
= 175˚C, V
R
= 100V
At T
vj
= 175˚C
At T
vj
= 175˚C
Min.
-
-
-
-
-
-
Max.
1.0
100
2600
120
0.75
0.0415
Units
V
mA
µC
A
V
mΩ
CURVES
10000
Measured under pulse conditions
12000
8000
10000
Instantaneous forward current, I
F
- (A)
Mean power dissipation - (W)
8000
6000
T
j
= 175˚C
6000
4000
4000
T
j
= 25˚C
2000
2000
0
0.4
0.6
0.8
1.0
Instantaneous forward voltage, V
F
- (V)
1.2
0
0
dc
Half wave
3 phase
6 phase
2000
4000
6000
8000
Mean forward current, I
F(AV)
- (A)
10000
Fig.2 Maximum (limit) forward characteristics
V
FM
Equation:-
V
FM
= A + Bln (I
F
) + C.I
F
+D.√I
F
Where
Fig.3 Dissipation curves
A = 0.402091
B = 0.011718
C = 6.48 x 10
–5
D = 0.005977
these values are valid for T
j
= 175˚C for I
F
500A to 10000A
4/8
www.dynexsemi.com
DS2102SY/DS2102SV
100000
I
F
Q
S
dI
F
/dt
I
RR
1000
Conditions:
T
j
= 175˚C
V
R
= 100V
I
F
= 2000A
Conditions:
T
j
= 175˚C
V
R
= 100V
I
F
= 2000A
10000
1000
0.1
Reverse recovery current I
rr
- (A)
Stored charge, Q
S
- (µC)
100
1.0
10
Rate of decay of forward current, dI
F
/dt - (A/µs)
100
10
0.1
1.0
10
Rate of decay of forward current, dI
F
/dt - (A/µs)
100
Fig.4 Total stored charge
160
I
2
t = Î
2
x t
2
140
Peak half sine forward current - (kA)
Fig.5 Maximum reverse recovery current
0.1
35
Anode side cooled
Thermal impedance - (˚C/W)
120
30
I
2
t value - (A
2
s x 10
6
)
0.01
Double side cooled
100
25
80
I
2
t
20
60
0.001
Conduction
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0095
0.0105
0.0112
0.0139
Single side
0.019
0.020
0.0207
0.0234
40
1
ms
10
1
2 3
5
10
20
15
50
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.0001
0.001
0.01
Cycles at 50Hz
Duration
0.1
1
Time - (s)
10
100
Fig.6 Surge (non-repetitive) forward current vs time
(with 50% V
RRM
at T
case
175˚C)
Fig.7 Maximum (limit) transient thermal impedance -
junction to case
5/8
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参数对比
与DS2102SV18相近的元器件有：DS2102SV15、DS2102SV20、DS2102SV16、DS2102SV19、DS2102SV17。描述及对比如下：
型号 DS2102SV18 DS2102SV15 DS2102SV20 DS2102SV16 DS2102SV19 DS2102SV17
描述 Rectifier Diode, 1 Phase, 1 Element, 6654A, 1800V V(RRM), Silicon, V, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 6654A, 1500V V(RRM), Silicon, V, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 6654A, 2000V V(RRM), Silicon, V, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 6654A, 1600V V(RRM), Silicon, V, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 6654A, 1900V V(RRM), Silicon, V, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 6654A, 1700V V(RRM), Silicon, V, 2 PIN
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合 符合
包装说明 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
针数 2 2 2 2 2 2
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE
应用 GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
最大非重复峰值正向电流 100000 A 100000 A 100000 A 100000 A 100000 A 100000 A
元件数量 1 1 1 1 1 1
相数 1 1 1 1 1 1
端子数量 2 2 2 2 2 2
最大输出电流 6654 A 6654 A 6654 A 6654 A 6654 A 6654 A
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 1800 V 1500 V 2000 V 1600 V 1900 V 1700 V
表面贴装 YES YES YES YES YES YES
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
端子位置 END END END END END END
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
厂商名称 Dynex - Dynex Dynex - Dynex
Base Number Matches - 1 1 1 1 -
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器件捷径:
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