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DS90CR216MTDX/NOPB

IC LINE RECEIVER, PDSO48, LOW PROFILE, PLASTIC, TSSOP-48, Line Driver or Receiver

器件类别:驱动程序和接口   

厂商名称:National Semiconductor(TI )

厂商官网:http://www.ti.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
National Semiconductor(TI )
包装说明
TSSOP, TSSOP48,.3,20
Reach Compliance Code
compliant
ECCN代码
EAR99
Is Samacsys
N
输入特性
DIFFERENTIAL SCHMITT TRIGGER
接口集成电路类型
LINE RECEIVER
接口标准
EIA-644
JESD-30 代码
R-PDSO-G48
JESD-609代码
e3
长度
12.5 mm
湿度敏感等级
2
功能数量
1
端子数量
48
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装等效代码
TSSOP48,.3,20
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度)
260
电源
3.3 V
认证状态
Not Qualified
最大接收延迟
接收器位数
3
座面最大高度
1.1 mm
最大压摆率
105 mA
最大供电电压
3.6 V
最小供电电压
3 V
标称供电电压
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子节距
0.5 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
宽度
6.1 mm
Base Number Matches
1
文档预览
DS90CR215/DS90CR216 +3.3V Rising Edge Data Strobe LVDS 21-Bit Channel Link-66 MHz
June 5, 2009
DS90CR215/DS90CR216
+3.3V Rising Edge Data Strobe LVDS 21-Bit Channel Link -
66 MHz
General Description
The DS90CR215 transmitter converts 21 bits of CMOS/TTL
data into three LVDS (Low Voltage Differential Signaling) data
streams. A phase-locked transmit clock is transmitted in par-
allel with the data streams over a fourth LVDS link. Every
cycle of the transmit clock 21 bits of input data are sampled
and transmitted. The DS90CR216 receiver converts the
LVDS data streams back into 21 bits of CMOS/TTL data. At
a transmit clock frequency of 66 MHz, 21 bits of TTL data are
transmitted at a rate of 462 Mbps per LVDS data channel.
Using a 66 MHz clock, the data throughput is 1.386 Gbit/s
(173 Mbytes/s).
The multiplexing of the data lines provides a substantial cable
reduction. Long distance parallel single-ended buses typically
require a ground wire per active signal (and have very limited
noise rejection capability). Thus, for a 21-bit wide data and
one clock, up to 44 conductors are required. With the Channel
Link chipset as few as 9 conductors (3 data pairs, 1 clock pair
and a minimum of one ground) are needed. This provides a
80% reduction in required cable width, which provides a sys-
tem cost savings, reduces connector physical size and cost,
and reduces shielding requirements due to the cables' smaller
form factor.
The 21 CMOS/TTL inputs can support a variety of signal
combinations. For example, five 4-bit nibbles plus 1 control,
or two 9-bit (byte + parity) and 3 control.
Features
Single +3.3V supply
Chipset (Tx + Rx) power consumption <250 mW (typ)
Power-down mode (<0.5 mW total)
Up to 173 Megabytes/sec bandwidth
Up to 1.386 Gbps data throughput
Narrow bus reduces cable size
290 mV swing LVDS devices for low EMI
+1V common mode range (around +1.2V)
PLL requires no external components
Low profile 48-lead TSSOP package
Rising edge data strobe
Compatible with TIA/EIA-644 LVDS standard
ESD Rating > 7 kV
Operating Temperature: −40°C to +85°C
Block Diagrams
DS90CR215
DS90CR216
1290901
1290927
Order Number DS90CR215MTD
See NS Package Number MTD48
Order Number DS90CR216MTD
See NS Package Number MTD48
See DS90CR216AMTD with Improved AC Specifications
Recommended Alternative Device
TRI-STATE® is a registered trademark of National Semiconductor Corporation.
© 2009 National Semiconductor Corporation
12909
www.national.com
DS90CR215/DS90CR216
Connection Diagrams
1290921
1290922
DS90CR215
DS90CR216
Typical Application
1290923
www.national.com
2
DS90CR215/DS90CR216
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC
)
−0.3V to +4V
CMOS/TTL Input Voltage
−0.3V to (V
CC
+ 0.3V)
CMOS/TTL Output Voltage
−0.3V to (V
CC
+ 0.3V)
LVDS Receiver Input Voltage
−0.3V to (V
CC
+ 0.3V)
LVDS Driver Output Voltage
−0.3V to (V
CC
+ 0.3V)
LVDS Output Short
Circuit Duration
Continuous
Junction Temperature
+150°C
Storage Temperature Range
−65°C to +150°C
Lead Temperature
(Soldering, 4 sec.)
+260°C
Maximum Package Power Dissipation @ +25°C
MTD48 (TSSOP) Package:
DS90CR215
DS90CR216
Package Derating
DS90CR215
DS90CR216
ESD Rating
(HBM, 1.5 kΩ, 100 pF)
1.98 W
1.89 W
16 mW/°C above +25°C
15 mW/°C above +25°C
> 7 kV
Recommended Operating
Conditions
Min
Supply Voltage (V
CC
)
Operating Free Air
Temperature (T
A
)
Receiver Input Range
Supply Noise Voltage (V
CC
)
3.0
No Max Units
m
3.3 3.6
V
−40 +25 +85 °C
0
2.4
V
100 mV
PP
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified
Symbol
V
IH
V
IL
V
OH
V
OL
V
CL
I
IN
I
OS
V
OD
ΔV
OD
V
OS
ΔV
OS
I
OS
I
OZ
Parameter
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Clamp Voltage
Input Current
Output Short Circuit Current
Differential Output Voltage
Change in V
OD
between Complimentary
Output States
Offset Voltage (Note 4)
Change in V
OS
between Complimentary Output
States
Output Short Circuit Current
Output TRI-STATE
®
Current
V
OUT
= 0V,
R
L
= 100Ω
PWR DWN = 0V,
V
OUT
= 0V or V
CC
LVDS RECEIVER DC SPECIFICATIONS
V
TH
V
TL
I
IN
Differential Input High Threshold
Differential Input Low Threshold
Input Current
V
IN
= +2.4V, V
CC
= 3.6V
V
IN
= 0V, V
CC
= 3.6V
TRANSMITTER SUPPLY CURRENT
V
CM
= +1.2V
−100
±10
±10
+100
mV
mV
μA
μA
±1
±10
μA
−3.5
1.125
1.25
I
OH
= −0.4 mA
I
OL
= 2 mA
I
CL
= −18 mA
V
IN
= V
CC
, GND,
2.5V or 0.4V
V
OUT
= 0V
R
L
= 100Ω
250
-60
290
−120
450
35
1.375
35
−5
mA
mV
mV
V
mV
mA
LVDS DRIVER DC SPECIFICATIONS
Conditions
Min
2.0
GND
2.7
3.3
0.06
−0.79
±5.1
0.3
−1.5
±10
Typ
Max
V
CC
0.8
Units
V
V
V
V
V
μA
CMOS/TTL DC SPECIFICATIONS
3
www.national.com
DS90CR215/DS90CR216
Symbol
I
CCTW
Parameter
Transmitter Supply Current Worst Case (with
Loads)
Conditions
R
L
= 100Ω,
C
L
= 5 pF,
Worst Case Pattern
(Figures
1, 2)
, T
A
= −10°C to +70°C
R
L
= 100Ω,
C
L
= 5 pF,
Worst Case Pattern
(Figures
1, 2)
, T
A
= −40°C to +85°C
f = 32.5 MHz
f = 37.5 MHz
f = 66 MHz
Min
Typ
31
32
37
Max
45
50
55
Units
mA
mA
mA
f = 40 MHz
f = 66 MHz
38
42
51
55
mA
mA
I
CCTZ
Transmitter Supply Current Power Down
PWR DWN = Low
Driver Outputs in TRI-STATE
under Powerdown Mode
C
L
= 8 pF,
Worst Case Pattern
(Figures
1, 3)
, T
A
= −10°C to +70°C
C
L
= 8 pF,
Worst Case Pattern
(Figures
1, 3)
, T
A
= −40°C to +85°C
f = 32.5 MHz
f = 37.5 MHz
f = 66 MHz
f = 40 MHz
f = 66 MHz
10
55
μA
RECEIVER SUPPLY CURRENT
I
CCRW
Receiver Supply Current Worst Case
49
53
78
55
78
65
70
105
82
105
mA
mA
mA
mA
mA
I
CCRZ
Receiver Supply Current Power Down
PWR DWN = Low
Receiver Outputs Stay Low during
Powerdown Mode
10
55
μA
Note 1:
“Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device
should be operated at these limits. The tables of “Electrical Characteristics” specify conditions for device operation.
Note 2:
Typical values are given for V
CC
= 3.3V and T
A
= +25°C.
Note 3:
Current into device pins is defined as positive. Current out of device pins is defined as negative. Voltages are referenced to ground unless otherwise
specified (except V
OD
and
ΔV
OD
).
Note 4:
V
OS
previously referred as V
CM
.
Transmitter Switching Characteristics
Over recommended operating supply and −40°C to +85°C ranges unless otherwise specified
Symbol
LLHT
LHLT
TCIT
TCCS
TPPos0
TPPos1
TPPos2
TPPos3
TPPos4
TPPos5
TPPos6
TPPos0
TPPos1
TPPos2
TPPos3
TPPos4
Parameter
LVDS Low-to-High Transition Time (Figure
2)
LVDS High-to-Low Transition Time (Figure
2)
TxCLK IN Transition Time (Figure
4)
TxOUT Channel-to-Channel Skew (Figure
5)
Transmitter Output Pulse Position for Bit0
(Note 7) (Figure
16)
Transmitter Output Pulse Position for Bit1
Transmitter Output Pulse Position for Bit2
Transmitter Output Pulse Position for Bit3
Transmitter Output Pulse Position for Bit4
Transmitter Output Pulse Position for Bit5
Transmitter Output Pulse Position for Bit6
Transmitter Output Pulse Position for Bit0
(Note 6) (Figure
16)
Transmitter Output Pulse Position for Bit1
Transmitter Output Pulse Position for Bit2
Transmitter Output Pulse Position for Bit3
Transmitter Output Pulse Position for Bit4
f = 66 MHz
f = 40 MHz
−0.4
3.1
6.5
10.2
13.7
17.3
21.0
−0.4
1.8
4.0
6.2
8.4
250
0
3.3
6.8
10.4
13.9
17.6
21.2
0
2.2
4.4
6.6
8.8
0.4
4.0
7.6
11.0
14.6
18.2
21.8
0.3
2.5
4.7
6.9
9.1
Min
Typ
0.5
0.5
Max
1.5
1.5
5
Units
ns
ns
ns
ps
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
www.national.com
4
DS90CR215/DS90CR216
Symbol
TPPos5
TPPos6
TCIP
TCIH
TCIL
TSTC
THTC
TCCD
TPLLS
TPDD
Parameter
Transmitter Output Pulse Position for Bit5
Transmitter Output Pulse Position for Bit6
TxCLK IN Period (Figure
6)
TxCLK IN High Time (Figure
6)
TxCLK IN Low Time (Figure
6)
TxIN Setup to TxCLK IN (Figure
6)
TxIN Hold to TxCLK IN (Figure
6)
TxCLK IN to TxCLK OUT Delay @ 25°C,V
CC
=3.3V (Figure
8)
Transmitter Phase Lock Loop Set (Figure
10)
Transmitter Powerdown Delay (Figure
14)
Min
10.6
12.8
15
0.35T
0.35T
2.5
0
3
Typ
11.0
13.2
T
0.5T
0.5T
Max
11.3
13.5
50
0.65T
0.65T
Units
ns
ns
ns
ns
ns
ns
ns
3.7
5.5
10
100
ns
ms
ns
Receiver Switching Characteristics
Over recommended operating supply and −40°C to +85°C ranges unless otherwise specified
Symbol
CLHT
CHLT
RSPos0
RSPos1
RSPos2
RSPos3
RSPos4
RSPos5
RSPos6
RSPos0
RSPos1
RSPos2
RSPos3
RSPos4
RSPos5
RSPos6
RSKM
RCOP
RCOH
RCOL
RSRC
RHRC
RCCD
RPLLS
RPDD
Parameter
CMOS/TTL Low-to-High Transition Time (Figure
3)
CMOS/TTL High-to-Low Transition Time (Figure
3)
Receiver Input Strobe Position for Bit 0 (Note 7)(Figure
17)
Receiver Input Strobe Position for Bit 1
Receiver Input Strobe Position for Bit 2
Receiver Input Strobe Position for Bit 3
Receiver Input Strobe Position for Bit 4
Receiver Input Strobe Position for Bit 5
Receiver Input Strobe Position for Bit 6
Receiver Input Strobe Position for Bit 0 (Note 6)(Figure
17)
Receiver Input Strobe Position for Bit 1
Receiver Input Strobe Position for Bit 2
Receiver Input Strobe Position for Bit 3
Receiver Input Strobe Position for Bit 4
Receiver Input Strobe Position for Bit 5
Receiver Input Strobe Position for Bit 6
RxIN Skew Margin (Note 5) (Figure
18)
RxCLK OUT Period (Figure
7)
RxCLK OUT High Time (Figure
7)
RxCLK OUT Low Time (Figure
7)
RxOUT Setup to RxCLK OUT (Figure
7)
RxOUT Hold to RxCLK OUT (Figure
7)
RxCLK IN to RxCLK OUT Delay (Figure
9)
Receiver Phase Lock Loop Set (Figure
11)
Receiver Powerdown Delay (Figure
15)
f = 40 MHz
f = 66 MHz
f = 40 MHz
f = 66 MHz
f = 40 MHz
f = 66 MHz
f = 40 MHz
f = 66 MHz
f = 40 MHz
f = 66 MHz
f = 40 MHz
f = 66 MHz
f = 66 MHz
f = 40 MHz
1.0
4.5
8.1
11.6
15.1
18.8
22.5
0.7
2.9
5.1
7.3
9.5
11.7
13.9
490
400
15
6.0
4.0
10.0
6.0
6.5
2.5
6.0
2.5
4.0
5.0
T
10.0
6.1
13.0
7.8
14.0
8.0
8.0
4.0
6.7
6.6
8.0
9.0
10
1
50
Min
Typ
2.2
2.2
1.4
5.0
8.5
11.9
15.6
19.2
22.9
1.1
3.3
5.5
7.7
9.9
12.1
14.3
Max
5.0
5.0
2.15
5.8
9.15
12.6
16.3
19.9
23.6
1.4
3.6
5.8
8.0
10.2
12.4
14.6
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ps
ps
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
μs
Note 5:
Receiver Skew Margin is defined as the valid data sampling region at the receiver inputs. This margin takes into account for transmitter pulse positions
(min and max) and the receiver input setup and hold time (internal data sampling window). This margin allows LVDS interconnect skew, inter-symbol interference
(both dependent on type/length of cable), and clock jitter less than 250 ps.
Note 6:
The min. and max. limits are based on the worst bit by applying a −400ps/+300ps shift from ideal position.
Note 7:
The min. and max. are based on the actual bit position of each of the 7 bits within the LVDS data stream across PVT.
5
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参数对比
与DS90CR216MTDX/NOPB相近的元器件有:DS90CR216MTD/NOPB。描述及对比如下:
型号 DS90CR216MTDX/NOPB DS90CR216MTD/NOPB
描述 IC LINE RECEIVER, PDSO48, LOW PROFILE, PLASTIC, TSSOP-48, Line Driver or Receiver IC LINE RECEIVER, PDSO48, LOW PROFILE, PLASTIC, TSSOP-48, Line Driver or Receiver
是否Rohs认证 符合 符合
厂商名称 National Semiconductor(TI ) National Semiconductor(TI )
包装说明 TSSOP, TSSOP48,.3,20 TSSOP, TSSOP48,.3,20
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
Is Samacsys N N
输入特性 DIFFERENTIAL SCHMITT TRIGGER DIFFERENTIAL SCHMITT TRIGGER
接口集成电路类型 LINE RECEIVER LINE RECEIVER
接口标准 EIA-644 EIA-644
JESD-30 代码 R-PDSO-G48 R-PDSO-G48
JESD-609代码 e3 e3
长度 12.5 mm 12.5 mm
湿度敏感等级 2 2
功能数量 1 1
端子数量 48 48
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSSOP TSSOP
封装等效代码 TSSOP48,.3,20 TSSOP48,.3,20
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度) 260 260
电源 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified
接收器位数 3 3
座面最大高度 1.1 mm 1.1 mm
最大压摆率 105 mA 105 mA
最大供电电压 3.6 V 3.6 V
最小供电电压 3 V 3 V
标称供电电压 3.3 V 3.3 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL
端子面层 Matte Tin (Sn) Matte Tin (Sn)
端子形式 GULL WING GULL WING
端子节距 0.5 mm 0.5 mm
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 40 40
宽度 6.1 mm 6.1 mm
Base Number Matches 1 1
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