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DS92001

3.3V B/LVDS-BLVDS Buffer

厂商名称:National Semiconductor(TI )

厂商官网:http://www.ti.com

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DS92001 3.3V B/LVDS-BLVDS Buffer
September 2006
DS92001
3.3V B/LVDS-BLVDS Buffer
General Description
The DS92001 B/LVDS-BLVDS Buffer takes a BLVDS input
signal and provides an BLVDS output signal. In many large
systems, signals are distributed across backplanes, and one
of the limiting factors for system speed is the "stub length" or
the distance between the transmission line and the untermi-
nated receivers on individual cards. Although it is generally
recognized that this distance should be as short as possible
to maximize system performance, real-world packaging con-
cerns often make it difficult to make the stubs as short as the
designer would like.
The DS92001 has edge transitions optimized for multidrop
backplanes where the switching frequency is in the 200 MHz
range or less. The output edge rate is critical in some sys-
tems where long stubs may be present, and utilizing a slow
transition allows for longer stub lengths.
The DS92001, available in the LLP (Leadless Leadframe
Package) package, will allow the receiver inputs to be placed
very close to the main transmission line, thus improving
system performance.
A wide input dynamic range allows the DS92001 to receive
differential signals from LVPECL as well as LVDS sources.
This will allow the device to also fill the role of an LVPECL-
BLVDS translator.
The LOS pin detects a non-driven B/LVDS bus state at the
input and provides an active LOW output. The LOS pin can
be tied to the device’s output enable pin (EN) to generate a
TRI-STATE output state when the input is un-driven. The
LOS pin can also be used locally to inform the system of the
bus state.
Features
n
n
n
n
n
n
n
n
n
n
n
Single +3.3 V Supply
B/LVDS receiver inputs accept LVPECL signals
TRI-STATE outputs
Loss of Signal (LOS) pin detects a non-driven bus
Receiver input threshold
<
±
100 mV
Fast propagation delay of 1.4 ns (typ)
Low jitter 400 Mbps fully differential data path
Compatible with BLVDS 10-bit SerDes (40MHz)
Compatible with ANSI/TIA/EIA-644-A LVDS standard
Available in SOIC and space saving LLP package
Industrial Temperature Range
Connection and Block Diagrams
SOIC - Top View
20024702
20024705
Functional Operation
BLVDS Inputs
[IN+] − [IN−]
VID
0.1V
VID
−0.1V
Full Fail-safe
OPEN/SHORTor Terminated
BLVDS Outputs
OUT+
H
L
H
OUT−
L
H
L
LLP - Top View
Ordering Information
20024743
Order Number
DS92001TMA
DS92001TLD
NS Pkg. No.
M08A
LDA08A
Pkg. Type
SOIC
LLP
© 2006 National Semiconductor Corporation
DS200247
www.national.com
DS92001
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC
)
LVCMOS/LVTTL Input Voltage
(EN)
LVCMOS/LVTTL Output Voltage
(LOS)
B/LVDS Receiver Input Voltage
(IN+, IN−)
BLVDS Driver Output Voltage
(OUT+, OUT−)
BLVDS Output Short Circuit
Current
Junction Temperature
Storage Temperature Range
Lead Temperature Range
Soldering (4 sec.)
+260˚C
−0.3V to +4V
−0.3V to (V
CC
+ 0.3V)
−0.3V to (V
CC
+ 0.3V)
Maximum Package Power Dissipation at 25˚C
M Package
Derate M Package
LDA Package
Derate LDA Package
ESD Ratings
(HBM, 1.5kΩ, 100pF)
(EIAJ, 0Ω, 200pF)
−0.3V to +4V
−0.3V to +4V
Continuous
+150˚C
−65˚C to +150˚C
≥2.5kV
≥250V
726 mW
5.8 mW/˚C above +25˚C
2.44 W
19.49 mW/˚C above
+25˚C
Recommended Operating
Conditions
Min
Supply Voltage (V
CC
)
Receiver Differential Input
Voltage (V
ID
) with
V
CM
=1.2V
Operating Free Air
Temperature
B/LVDS Input Rise/Fall
20% to 80%
3.0
0.1
Typ
3.3
Max
3.6
2.4
Units
V
|V|
−40
+25
2
+85
20
˚C
ns
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified. (Notes 2, 3)
Symbol
V
IH
V
IL
I
IH
I
IL
V
CL
V
OH
V
OL
I
OSHLOS
Parameter
High Level Input Voltage
Low Level Input Voltage
High Level Input Current
Low Level Input Current
Input Clamp Voltage
Output High Voltage
Output Low Voltage
(Note 5)
Output Short Circuit Current
(output high)(Note 4)
Differential Output Voltage
(Note 2)
Change in Magnitude of V
OD
for Complimentary Output
States
Offset Voltage
Change in Magnitude of V
OS
for Complimentary Output
States
Output TRI-STATE Current
Power-Off Leakage Current
V
IN
= V
CC
or 2.0V
V
IN
= GND or 0.8V
I
CL
= −18 mA
I
OH
= −4mA, V
ID
|200mV|, V
CM
= 1.2V
I
OL
= 4mA, V
ID
= 0V, V
CM
= 1.2V
V
OUT
= 0V, 200mV
V
ID
2V, V
CM
= 1.5V
V
CC
−0.4V
−10
Conditions
Min
2.0
GND
+7
Typ
Max
V
CC
0.8
+20
+10
−1.5
V
CC
0.4
−60
Units
V
V
µA
µA
V
V
V
mA
LVCMOS/LVTTL DC SPECIFICATIONS (EN)
±
1
−0.6
3.1
0.15
−35
LVCMOS/LVTTL DC SPECIFICATIONS (LOS)
BLVDS OUTPUT DC SPECIFICATIONS (OUT)
|V
OD
|
∆V
OD
R
L
= 27Ω
R
L
= 50Ω
RL = 27Ω or 50Ω
Figure 1, Figure 2
20
R
L
= 27Ω or R
L
= 50Ω
Figure 1
2
EN = 0V, V
OUT
= V
CC
or GND
V
CC
= 0V or Open Circuit, V
OUT
= 3.6V
−20
−20
20
+20
+20
mV
µA
µA
1.1
1.25
1.375
mV
V
250
350
350
450
500
600
mV
mV
V
OS
∆V
OS
I
OZ
I
OFF
±
5
±
5
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2
DS92001
Electrical Characteristics
Symbol
I
OS1
Parameter
Output Short Circuit Current
(Note 4)
(Continued)
Over recommended operating supply and temperature ranges unless otherwise specified. (Notes 2, 3)
Conditions
EN = V
CC
, V
CM
= 1.2V,V
ID
= 200mV, V
OUT+
= 0V,
or
V
ID
= −200mV, V
CM
= 1.2V, V
OUT−
= 0V
V
ID
= −200mV, V
CM
= 1.2V, V
OUT+
= V
CC
, or
V
ID
= 200mV, V
CM
=1.2V, V
OUT−
= V
CC
Min
Typ
Max
Units
BLVDS OUTPUT DC SPECIFICATIONS (OUT)
−30
−60
mA
53
80
mA
I
OSD
Differential Output Short Circuit
Current (Note 4)
EN = V
CC
, V
ID
= |200mV|, V
CM
. = 1.2V, V
OD
= 0V
(connect true and complement outputs through a
current meter)
V
CM
= +0.05V, +1.2V or +3.25V
−70
|V
ID
|/2
V
IN
= V
CC
V
IN
= 0V
V
IN
= V
CC
V
IN
= 0V
Inputs open,
shorted, or
terminated
R
L
= 27Ω
R
L
= 50Ω
250
350
V
CC
= 3.6V or 0V
|30|
|42|
mA
B/LVDS RECEIVER DC SPECIFICATIONS (IN)
V
TH
V
TL
V
CMR
I
IN
∆I
IN
V
FSOD
Differential Input High
Threshold (Note 5)
Differential Input Low
Threshold (Note 5)
Common Mode Voltage Range
(Note 5)
Input Current
Change in Magnitude of I
IN
Fail-safe BLVDS Outputs
(OUT+ is a more positive
voltage than OUT−)
(Note 5)
Total Dynamic Supply Current
(includes load current)
TRI-STATE Supply Current
−30
−30
V
CC
−|V
ID
|/2
|1.5|
|1.5|
1
1
350
450
|20|
|20|
6
6
500
600
−5
mV
mV
V
µA
µA
µA
µA
mV
mV
SUPPLY CURRENT
I
CCD
EN = V
CC
, R
L
= 27Ω or 50Ω, C
L
= 15 pF,
Freq. = 200MHz 50% duty cycle,
V
ID
= 200mV, V
CM
= 1.2V
EN = 0V,Freq. = 200MHz 50% duty cycle,
V
ID
= 200mV, V
CM
= 1.2V
50
65
mA
I
CCZ
36
46
mA
AC Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified. (Note 3)
Symbol
t
PHLD
Parameter
Differential Propagation Delay
High to Low
(Note 10)
Differential Propagation Delay
Low to High
(Note 10)
Pulse Skew |t
PLHD
− t
PHLD
|
(measure of duty cycle)
(Notes 5, 6)
Part-to-Part Skew (Note 5)
(Note 7)
Part-to-Part Skew (Note 5)
(Note 8)
Rise Time (Notes 5, 10)
20% to 80% points
R
L
= 50Ω or 27Ω, C
L
= 15pF
Figure 3
and
Figure 5
Conditions
V
ID
= 200mV, V
CM
= 1.2V,
R
L
= 27Ω or 50Ω, C
L
= 15pF
Figure 3
and
Figure 4
Min
1.0
Typ
1.4
Max
2.0
Units
ns
LVDS OUTPUT AC SPECIFICATIONS (OUT)
t
PLHD
1.0
1.4
2.0
ns
t
SKD1
0
20
200
ps
t
SKD3
t
SKD4
t
LHT
0
0
0.350
200
300
1
ps
ns
ns
0.6
1.0
3
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DS92001
AC Electrical Characteristics
Symbol
t
HLT
t
PHZ
t
PLZ
t
PZH
t
PZL
t
DJ
t
RJ
f
MAX
Parameter
Fall Time (Notes 5, 10)
80% to 20% points
LVDS OUTPUT AC SPECIFICATIONS (OUT)
(Continued)
Over recommended operating supply and temperature ranges unless otherwise specified. (Note 3)
Conditions
Min
0.350
Typ
0.6
3
3
100
100
23
Max
1.0
25
25
120
120
78
36
Units
ns
ns
ns
ns
ns
ps
ps
Disable Time (Active High to Z) R
L
= 50Ω, C
L
= 15pF
Disable Time (Active Low to Z)
Enable Time (Z to Active High)
Enable Time (Z to Active Low)
LVDS Data Jitter, Deterministic V
ID
= 300mV; PRBS = 2
(Peak-to-Peak) (Note 9)
400Mbps (NRZ)
LVDS Clock Jitter, Random
(Note 9)
Maximum guaranteed
frequency
(Note 11)
− 1 data; V
CM
= 1.2V at
Figure 6
and
Figure 7
V
ID
= 300mV; V
CM
= 1.2V at 200MHz clock
V
ID
= 200mV, V
CM
= 1.2V
200
300
MHz
LVCMOS/LVTTL AC SPECIFICATIONS (LOS)
t
PHLLOS
t
PLHLOS
t
LHLOS
t
HLLOS
LVTTL Propagation Delay High CL = 10pF, IN− = 1V, 1V
IN+
1.3V,
to Low (Note 5)
Freq. = 10MHz, 50% Duty Cycle
LVTTL Propagation Delay Low
Figures 8, 9
to High (Note 5)
Rise Time
20% to 80% (Note 5)
Fall Time
80% to 20% (Note 5)
1
1
2
1.3
3
3
ns
ns
10
2
15
5
20
10
ns
ns
Note 1:
“Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2:
Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except V
ID
, V
OD
, V
TH
,
V
TL
, and
∆V
OD
. V
OD
has a value and direction. Positive direction means OUT+ is a more positive voltage than OUT−.
Note 3:
All typical are given for V
CC
= +3.3V and T
A
= +25˚C, unless otherwise stated.
Note 4:
Output short circuit current (I
OS
) is specified as magnitude only, minus sign indicates direction only.
Note 5:
The parameters are guaranteed by design. The limits are based on statistical analysis of the device performance over the PVT (process, voltage and
temperature) range.
Note 6:
t
SKD1
, |t
PLHD
− t
PHLD
|, is the magnitude difference in differential propagation delay time between the positive going edge and the negative going edge of
the same channel (a measure of duty cycle).
Note 7:
t
SKD3
, Part to Part Skew, is defined as the difference between the minimum and maximum specified differential propagation delays. This specification
applies to devices at the same V
CC
and within 5˚C of each other within the operating temperature range. This parameter guaranteed by design and characterization.
Note 8:
t
SKD4
, Part to Part Skew, is the differential channel-to- channel skew of any event between devices. This specification applies to devices over recommended
operating temperature and voltage ranges, and across process distribution. t
SKD4
is defined as |Max − Min| differential propagation delay.
Note 9:
The parameters are guaranteed by design. The limits are based on statistical analysis of the device performance over the PVT range with the following test
equipment setup: Agilent 86130A used as stimulus, 5 feet of RG142B cable with DUT test board and Agilent 86100A (digital scope mainframe) with Agilent 86122A
(20GHz scope module). Data input jitter pk to pk = 22 picoseconds; Clock input jitter = 24 picoseconds; t
DJ
measured 100 picoseconds, t
RJ
measured 60
picoseconds.
Note 10:
Propagation delay, rise and fall times are guaranteed by design and characterization to 200MHz. Generator for these tests: 50MHz
f
200MHz, Zo =
50Ω, tr, tf
0.5ns. Generator used was HP8130A (300MHz capability).
Note 11:
f
MAX
test: Generator (HP8133A or equivalent), Input duty cycle = 50%. Output criteria: VOD
200mV, Duty Cycle better than 45/55%. This specification
is guaranteed by design and characterization. A minimum is specified, which means that the device will operate to specified conditions from DC to the minimum
guaranteed AC frequency. The typical value is always greater than the minimum guarantee.
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4
DS92001
DC Test Circuits
20024703
FIGURE 1. Differential Driver DC Test Circuit
20024708
FIGURE 2. Differential Driver Full Load DC Test Circuit
AC Test Circuits and Timing Diagrams
20024706
FIGURE 3. BLVDS Output Load
20024707
FIGURE 4. Propagation Delay Low-to-High and High-to-Low
5
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参数对比
与DS92001相近的元器件有:DS92001_06。描述及对比如下:
型号 DS92001 DS92001_06
描述 3.3V B/LVDS-BLVDS Buffer 3.3V B/LVDS-BLVDS Buffer
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