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DSA12X2/3/4

High Performance Differential MEMS Oscillators for Automotive

Features

• Automotive AEC-Q100 Qualified

• Any Frequency between 2.5 MHz and 450 MHz

• Supports LVPECL, LVDS, or HCSL Differential

Outputs

• Very Low RMS Phase Jitter: <650 fs (typ.)

• Complies with PCIe Gen1/2/3/4/5 Common Clock

Spec

• High Stability: ±20 ppm, ±25 ppm, ±50 ppm

• Wide Temperature Range:

- Automotive Grade 1: –40°C to +125°C

(DSA12x3 LVDS Output Only)

- Automotive Grade 2: –40°C to +105°C

- Automotive Grade 3: –40°C to +85°C

• Small Industry-Standard Footprints

- 2.5 mm x 2.0 mm

- 3.2 mm x 2.5 mm

- 5.0 mm x 3.2 mm

- 7.0 mm x 5.0 mm

• Excellent Shock and Vibration Immunity

- Qualified to MIL-STD-883

• High Reliability

- 20x Better MTF than Quartz Oscillators

• Supply Range of 2.25V to 3.63V

• Standby, Frequency Select, and Output Enable

Functions

• Lead-Free and RoHS-Compliant

General Description

The DSA12x2/3/4 family of high performance

oscillators utilizes the latest generation of silicon

MEMS technology that reduces close-in noise and

provides excellent jitter and stability over a wide range

of supply voltages and temperatures. By eliminating

the need for quartz or SAW technology, MEMS

oscillators significantly enhance reliability and

accelerate product development, while meeting

stringent clock performance criteria for automotive

applications.

The DSA12x2/3/4 family features a control function on

pin 1 or pin 2 that permits either a standby feature

(complete power down when STDBY is low), output

enable (output is tri-stated with OE low), or a frequency

select (choice of two frequencies selected by FS

high/low). See the

Product Identification System

section for detailed information.

All oscillators are available in industry-standard

packages, including the small 2.5 mm x 2.0 mm, and

are “drop-in” replacements for standard 6-pin

LVPECL/LVDS/HCSL crystal oscillators.

Package Types

DSA12

2/3/4

6-Lead CDFN/VDFN

OE/STDBY/FS

GND

VDD

CLK–

CLK+

Applications

• Automotive Infotainment

• Automotive ADAS

• In-Vehicle Networking, CAN Bus, Ethernet

OE/STDBY/FS

GND

VDD

CLK–

CLK+



2020-2021 Microchip Technology Inc.

DS20006378C-page 1

DSA12X2/3/4

Functional Block Diagrams

Pin 1

OE/STDBY/FS

DIGITAL

CONTROL

SUPPLY

REGULATION

Pin 6

VDD

Pin 2

MEMS

RESONATOR

TEMP SENSOR +

CONTROL &

COMPENSATION

PLL

OUTPUT

DIV

Pin 5

CLK–

Pin 4

CLK+

Pin 3

GND

Pin 1

DIGITAL

CONTROL

SUPPLY

REGULATION

Pin 6

VDD

Pin 2

OE/STDBY/FS

MEMS

RESONATOR

TEMP SENSOR +

CONTROL &

COMPENSATION

PLL

OUTPUT

DIV

Pin 5

CLK–

Pin 4

CLK+

Pin 3

GND

DS20006378C-page 2



2020-2021 Microchip Technology Inc.

DSA12X2/3/4

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage .......................................................................................................................................... –0.3V to +4.0V

Input Voltage .....................................................................................................................................–0.3V to V

+ 0.3V

ESD Protection (HBM) ............................................................................................................................................... 4 kV

ESD Protection (MM) ................................................................................................................................................400V

ESD Protection (CDM) ............................................................................................................................................ 1.5 kV

† Notice:

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at those or any other conditions above those indicated

in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended

periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

Electrical Characteristics:

= 2.5V ±10% or 3.3V±10%; T

= –40°C to +105°C, unless noted.

Parameter

Supply Voltage

Symbol

Min.

2.25

—

Supply Current

—

Standby Current

STDBY_

Δf

—

Frequency Stability

—

Aging

Startup Time

Δf

Input Logic Levels

Output Disable Time

Output Enable Time

Enable Pull-Up Resistor

LVPECL (DSA12x2)

Frequency

Output Logic Levels

Peak-to-Peak Output Swing

Output Transition Time

2.5

–

1.145

—

800

200

250

450

—

–

1.695

—

250

300

= 50Ω

Single-Ended

20% to 80%, R

= 50Ω

MHz

—

0.75 x

—

Typ.

—

2.5

—

5.5

—

1.5

Max.

3.63

—

Units

Conditions

Note 1

LVPECL, f

OUT

= 100 MHz

LVDS, f

OUT

= 100 MHz

HCSL, f

OUT

= 100 MHz

Output disabled (tri-state),

OUT

= 100 MHz

±20

±25

±50

±5

±1

—

0.25 x

350

—

µA

Input pin = STDBY = Asserted

= 3.3V)

Includes frequency variations due

to initial tolerance, temp., and

power supply voltage

First year @ 25°C

Per year after first year

From 90% V

to valid clock

output, T = +25°C,

Note 2

Input logic high

ppm

Input logic low

MΩ

Note 3

STDBY

Pull-up resistor on pin 1,

Note 4



2020-2021 Microchip Technology Inc.

DS20006378C-page 3

DSA12X2/3/4

ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Characteristics:

= 2.5V ±10% or 3.3V±10%; T

= –40°C to +105°C, unless noted.

Parameter

Output Duty Cycle

Period Jitter RMS

Period Jitter Peak-to-Peak

Integrated Phase Noise

(Random)

Frequency

Output Offset Voltage

Peak-to-Peak Output Swing

Output Transition Time

Output Duty Cycle

Period Jitter RMS

Period Jitter Peak-to-Peak

Period Jitter RMS

Period Jitter Peak-to-Peak

Integrated Phase Noise

(Random)

HCSL (DSA12x4)

Frequency

Output Logic Levels

Peak-to-Peak Output Swing

Output Transition Time

Output Duty Cycle

Period Jitter RMS

Period Jitter Peak-to-Peak

Integrated Phase Noise

(Random)

SYM

PER

PTP

2.3

0.64

—

200

250

—

750

260

370

—

0.617

0.460

0.212

450

—

0.1

—

400

500

—

RMS

MHz

—

= 50Ω

Single-Ended

20% to 80%, R

= 50Ω

Differential

= 100.00 MHz, 10k cycles

12 kHz to 20 MHz @100 MHz

100 kHz to 20 MHz @100 MHz

1.875 MHz to 20 MHz @100 MHz

Symbol

SYM

PER

PTP

SYM

PER

PTP

PER

PTP

Min.

—

Typ.

—

2.0

0.65

Max.

—

Units

RMS

MHz

Conditions

Differential

= 156.25 MHz, 10k cycles

12 kHz to 20 MHz @156.25 MHz

LVDS Integrated Phase Noise (DSA12x3)

2.3

1.15

250

120

—

0.9

—

1.25

350

170

—

2.5

0.65

450

1.35

450

220

—

RMS

—

R = 100Ω Differential

Single-Ended

20% to 80%, R

= 100Ω

Differential

= 156.25 MHz, 10k cycles

= 156.25 MHz,

= –40°C to +125°C

= 156.25 MHz,

= –40°C to +125°C

12 kHz to 20 MHz @156.25 MHz

= –40°C to +105°C

2 kHz to 20 MHz @156.25 MHz

TA = –40°C to +125°C

DS20006378C-page 4



2020-2021 Microchip Technology Inc.

DSA12X2/3/4

ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Characteristics:

= 2.5V ±10% or 3.3V±10%; T

= –40°C to +105°C, unless noted.

Parameter

Symbol

RMS-CCHF

Phase Jitter

RMS-CCLF

RMS-CC

Note 1:

Min.

—

Typ.

2.230

0.08

0.107

0.043

Max.

3.1

3.0

1.0

0.30

0.12

RMS

Units

RMS

Conditions

PCIe Gen 1.1, T

= D

+ 14.069 x

(BER 10

–12

Note 5

PCIe Gen 2.1, 1.5 MHz to

Nyquist,

Note 5

PCIe Gen 2.1, 10 kHz to1.5 MHz,

Note 5

PCIe Gen 3.0,

Note 5

PCIe Gen 4.0, 16 GHz

PCIe Gen 5.0, 32 GHz

pin should be filtered with a 0.1 µF capacitor.

is the time to 100 ppm stable output frequency after V

is applied and outputs are enabled.

: See the

Output Waveform

and the

Test Circuits

sections for more information.

Output is enabled if pad is floated (not connected).

Jitter limits established by Gen1.1, Gen 2.1, and Gen 3.0 PCIe standards.

TEMPERATURE SPECIFICATIONS

Note 1

Parameters

Temperature Ranges

Maximum Junction Temperature

Storage Temperature Range

Lead Temperature

Note 1:

—

–55

—

+150

+260

°C

—

Soldering, 40s

Symbol

Min.

Typ.

Max.

Units

Conditions

The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable

junction temperature and the thermal resistance from junction to air (i.e., T

, T



). Exceeding the max-

imum allowable power dissipation will cause the device operating junction temperature to exceed the max-

imum +150°C rating. Sustained junction temperatures above +150°C can impact the device reliability.



2020-2021 Microchip Technology Inc.

DS20006378C-page 5