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DSAI110-16F

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 160A, 1600V V(RRM), Silicon, DO-205AC, DO-30, 1 PIN

器件类别：分立半导体    二极管   

厂商名称：IXYS

器件标准：  

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
IXYS
零件包装代码
DO-30
包装说明
DO-30, 1 PIN
针数
1
Reach Compliance Code
compliant
ECCN代码
EAR99
应用
GENERAL PURPOSE
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-205AC
JESD-30 代码
O-MUPM-D1
最大非重复峰值正向电流
3150 A
元件数量
1
相数
1
端子数量
1
最高工作温度
180 °C
最大输出电流
160 A
封装主体材料
METAL
封装形状
ROUND
封装形式
POST/STUD MOUNT
峰值回流温度（摄氏度）
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
1600 V
表面贴装
NO
技术
AVALANCHE
端子形式
SOLDER LUG
端子位置
UPPER
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
DS 110
DSA 110
DSI 110
DSAI 110
Rectifier Diodes
Avalanche Diodes
V
RSM
V
900
1300
1300
1700
1900
-
-
V
(BR)min
x
V
R R M
V
V
800
1200
DS
DS
DSA
DSA
DSA
Anode
on
stud
110-08F
110-12F
110-12F
110-16F
110-18F
Cathode
on
DSI
DSI
DSAI
DSAI
DSAI
stud
110-08F
110-12F
110-12F
110-16F
110-18F
V
RRM
= 800 - 1800 V
I
F(RMS)
= 250 A
I
F(AV)M
= 160 A
DO-205 AC
C
A
DS
DSA
A
C
DSI
DSAI
1300 1200
1750 1600
1950 1800
x
Only for Avalanche Diodes
Symbol
I
F(RMS)
I
F(AV)M
P
RSM
I
FSM
Test
Conditions
Maximum
250
160
35
3150
3380
2800
3000
Ratings
A
A
kW
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
°C
°C
°C
Nm
lb.in.
g
Values
T
(vj)
= T
(vj)m
T
case
= 100°C; 180° sine
DSA(I) types, T
(vj)
= T
(vj)m
, t
p
= 10
µs
T
(vj)
= 45°C;
V
R
= 0
T
(vj)
= T
(vj)m
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
A = Anode
C = Cathode
M12
Features
International standard package,
JEDEC DO-205 AC (~DO30)
Planar glassivated chips
q
q
I
2
t
T
(vj)
= 45°C
V
R
= 0
T
(vj)
= T
(vj)m
V
R
= 0
49 600
48 000
39 200
37 800
-40...+180
180
-40...+180
Applications
High power rectifiers
DC supplies
Field supply for DC motors
Power supplies
q
q
q
q
q
q
q
T
(vj)
T
(vj)m
T
stg
M
d
Weight
Symbol
I
R
q
Mounting torque
16-20
142-177
130
Characteristic
≤
≤
10
1.4
0.85
1.1
0.35
0.39
0.45
4.25
4.25
100
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
mm
(1
mm
Dimensions in
=
0.0394")
Test
Conditions
T
(vj)
= T
(vj)m
; V
R
= V
RRM
I
F
= 500 A; T
(vj)
= 25°C
mA
V
V
mΩ
K/W
K/W
K/W
mm
mm
m/s
2
V
F
V
T0
r
T
R
thJC
R
thJH
d
S
d
A
a
For power-loss calculations only
T
(vj)
= T
(vj)m
DC current
180° sine
DC current
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Data according to IEC 747-2
IXYS reserves the right to change limits, test conditions and dimensions
I
XYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Fax: +49-6206-503629
DS 110
DSA 110
600
typ.
A
500
I
F
400
T
(vj)
= 180°C
T
(vj)
= 25°C
I
FSM
lim.
A
1500
2000
50Hz, 80%⋅V
RRM
T
(vj)
= 45°C
I
2
t
4
300
1000
T
(vj)
= 180°C
10
5
As
6
T
(vj)
= 45°C
2
DSI 110
DSAI 110
V
R
= 0 V
T
(vj)
= 180°C
2
200
500
100
0
0.0
0.5
1.0
V
F
1.5
V 2.0
0
10
-3
10
4
10
-2
10
-1
t
s
10
0
1
2
3
4
5 6 7 ms10
89
t
Fig. 1
300
W
Forward characteristics
Fig. 2
Surge overload current
I
FSM
: Crest value, t: duration
Fig. 3
200
I
2
t versus time (1-10 ms)
R
thJA
:
P
F
200
0.36 K/W
0.7 K/W
1.3 K/W
A
150
I
F(AV)M
100
100
DC
180° sin
120°
60°
30°
50
0
0
50
100
150
I
F(AV)M
A
200 20 40 60 80 100 120 140 160 180
0
°C
T
amb
0
0
40
80
120
160 °C 200
T
c
ase
Fig. 4
0.8
K/W
0.6
Z
thJH
Power dissipation versus forward current and ambient temperature
Fig. 5
Max. forward current at case
temperature 180° sine
R
thJH
for various conduction angles d:
30°
60°
120°
180°
DC
d
DC
180°
120°
60°
30°
R
thJH
(K/W)
0.45
0.516
0.567
0.660
0.733
0.4
Constants for Z
thJH
calculation:
0.2
i
1
2
3
4
R
thi
(K/W)
0.06713
0.06242
0.22045
0.10
t
i
(s)
0.003
0.094
3.846
3.2
0.0
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
s
t
10
4
Fig. 6
Transient thermal impedance junction to heatsink
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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参数对比
与DSAI110-16F相近的元器件有：DS110-12F、DSA110-18F、DSA110-16F、DSAI110-18F。描述及对比如下：
型号 DSAI110-16F DS110-12F DSA110-18F DSA110-16F DSAI110-18F
描述 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 160A, 1600V V(RRM), Silicon, DO-205AC, DO-30, 1 PIN Rectifier Diode, Avalanche, 1 Phase, 1 Element, 160A, 1200V V(RRM), Silicon, DO-205AC, DO-30, 1 PIN Rectifier Diode, Avalanche, 1 Phase, 1 Element, 160A, 1800V V(RRM), Silicon, DO-205AC, DO-30, 1 PIN Rectifier Diode, Avalanche, 1 Phase, 1 Element, 160A, 1600V V(RRM), Silicon, DO-205AC, DO-30, 1 PIN Rectifier Diode, Avalanche, 1 Phase, 1 Element, 160A, 1800V V(RRM), Silicon, DO-205AC, DO-30, 1 PIN
厂商名称 IXYS IXYS IXYS IXYS IXYS
零件包装代码 DO-30 DO-30 DO-30 DO-30 DO-30
包装说明 DO-30, 1 PIN O-MUPM-D1 O-MUPM-D1 DO-30, 1 PIN DO-30, 1 PIN
针数 1 1 1 1 1
Reach Compliance Code compliant unknown unknown unknown compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
应用 GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
外壳连接 CATHODE ANODE ANODE ANODE CATHODE
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 DO-205AC DO-205AC DO-205AC DO-205AC DO-205AC
JESD-30 代码 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
最大非重复峰值正向电流 3150 A 3150 A 3150 A 3150 A 3150 A
元件数量 1 1 1 1 1
相数 1 1 1 1 1
端子数量 1 1 1 1 1
最高工作温度 180 °C 180 °C 180 °C 180 °C 180 °C
最大输出电流 160 A 160 A 160 A 160 A 160 A
封装主体材料 METAL METAL METAL METAL METAL
封装形状 ROUND ROUND ROUND ROUND ROUND
封装形式 POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 1600 V 1200 V 1800 V 1600 V 1800 V
表面贴装 NO NO NO NO NO
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子形式 SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG
端子位置 UPPER UPPER UPPER UPPER UPPER
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器件捷径:
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