DSC1001/3/4
1.8V-3.3V Low-Power Precision CMOS Oscillators
Features
• Frequency Range: 1 MHz to 150 MHz
• Exceptional Stability over Temperature
- ±10 ppm, ±20 ppm, ±25 ppm, ±50 ppm
• Operating Voltage
- 1.7 to 3.6V
• Operating Temperature Range
- Ext. Industrial –40°C to 105°C
- Industrial –40°C to 85°C
- Commercial –20°C to 70°C
• Low Operating and Standby Current
- 6 mA Operating (1 MHz)
- 15 µA Standby (Max.)
• Ultra Miniature Footprint
- 2.5 mm x 2.0 mm x 0.85 mm
- 3.2 mm x 2.5 mm x 0.85 mm
- 5.0 mm x 3.2 mm x 0.85 mm
- 7.0 mm x 5.0 mm x 0.85 mm
• MIL-STD 883 Shock and Vibration Resistant
• Pb Free, RoHS, Reach SVHC Compliant
• AEC-Q100 Reliability Qualified
General Description
The DSC1001/3/4 is a silicon MEMS based CMOS
family of oscillators that offers excellent jitter and
stability performance over a wide range of supply
voltages and temperatures. The device operates from
1 MHz to 150 MHz with supply voltages between 1.8 to
3.3 volts and temperature ranges up to –40°C to
105°C.
The DSC1001/3/4 incorporate an all silicon resonator
that is extremely robust and nearly immune to stress
related fractures, common to crystal based oscillators.
Without sacrificing the performance and stability
required of today’s systems, a crystal-less design
allows for a higher level of reliability, making the
DSC1001/3/4 ideal for rugged, industrial, and portable
applications where stress, shock, and vibration can
damage quartz crystal based systems.
Available in industry standard packages, the
DSC1001/3/4 can be “dropped-in” to the same PCB
footprint as standard crystal oscillators.
The DSC1003 and DSC1004 have the same
functionality and performance as the DSC1001, but
feature higher output drives of 25 pF and 40 pF,
respectively.
Applications
•
•
•
•
•
•
Mobile Applications
Consumer Electronics
Portable Electronics
DVR, CCTV, Surveillance Cameras
Low Profile Applications
Industrial Applications
Package Types
DSC1001/3/4
CDFN/DFN
(Top View)
STANDBY#
1
4
VDD
Benefits
• Pin for Pin “Drop-In” Replacement for Industry
Standard Oscillators
• Semiconductor Level Reliability, Significantly
Higher than Quartz
• Short Mass Production Lead Times
• Longer Battery Life/Reduced Power Consumption
• Compact Plastic Package
• Cost Effective
GND
2
3
OUT
2017 Microchip Technology Inc.
DS20005529B-page 1
DSC1001/3/4
Block Diagram
V
DD
OUTPUT
RESONATOR
PFD
VCO
FRAC
-N
FRAC-N
PLL
STANDBY#
(PIN1)
GND
DS20005529B-page 2
2017 Microchip Technology Inc.
DSC1001/3/4
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Input Voltage (V
IN
) ............................................................................................................................–0.3V to V
DD
+ 0.3V
ESD Protection ....................................................................................................... 4 kV HBM, ±200V MM, 1.5 kV CDM
Recommended Operating Conditions
Supply Voltage (V
DD
) ................................................................................................................................ +1.7V to +3.6V
Output Load (Z
L
) ............................................................................................................................. R > 10 kΩ, C
≤
15 pF
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Sym.
F
0
Min.
1
—
—
—
—
—
—
—
—
45
0.75 x V
DD
—
—
Typ.
—
—
—
—
—
—
—
1.0
20
—
—
—
6.0
6.5
7.2
8.3
—
—
—
—
—
—
Max.
150
±10
±20
±25
±50
±5
15
1.3
100
55
—
0.25 x V
DD
6.3
7.1
8.5
11.9
—
—
—
0.2 x V
DD
0.2 x V
DD
0.2 x V
DD
V
V
mA
ppm
µA
ms
ns
%
V
V
ppm
Units
MHz
Conditions
Single Frequency
Includes frequency variations
due to initial tolerance,
temperature and power supply
voltage
1 year @ +25°C
T = +25°C
T = +25°C
—
—
—
—
1 MHz
27 MHz
70 MHz
150 MHz
–6 mA, DSC1004, C
L
= 40 pF
–6 mA, DSC1003, C
L
= 25 pF
–4 mA, DSC1001, C
L
= 15 pF
6 mA, DSC1004, C
L
= 40 pF
6 mA, DSC1003, C
L
= 25 pF
4 mA, DSC1001, C
L
= 15 pF
C
L
= 0 pF,
R
L
=
∞,
T = +25°C
Electrical Characteristics:
V
DD
= 1.8 to 3.3V; T
A
= +85°C unless otherwise specified.
Parameters
Frequency
Frequency Tolerance
∆f
Aging
Supply Current, Standby
Output Startup Time
(Note
1)
Output Disable Time
Output Duty Cycle
Input Logic Level High
Input Logic Level Low
V
DD
= 1.8V
∆f
I
DD
t
SU
t
DA
SYM
V
IH
V
IL
Supply Current, No Load
I
DD
—
—
—
0.8 x V
DD
Output Logic Level High
V
OH
0.8 x V
DD
0.8 x V
DD
—
Output Logic Level Low
V
OL
—
—
Note 1:
t
SU
is time to stable output frequency after V
DD
is applied. t
SU
and t
EN
(after EN is asserted) are identical
values.
2:
Measured over 50k clock cycles.
2017 Microchip Technology Inc.
DS20005529B-page 3
DSC1001/3/4
TABLE 1-1:
DC CHARACTERISTICS (CONTINUED)
Sym.
Min.
—
Output Transition Rise
Time
t
R
—
—
—
Output Transition Fall
Time
t
F
—
—
Jitter, Max.
Cycle-to-Cycle
Period Jitter
V
DD
= 2.5V
—
Supply Current, No Load
I
DD
—
—
—
0.9 x V
DD
Output Logic Level High
V
OH
0.8 x V
DD
0.8 x V
DD
—
Output Logic Level Low
V
OL
—
—
—
Output Transition Rise
Time
t
R
—
—
—
Output Transition Fall
Time
t
F
—
—
6.0
6.7
7.7
9.6
—
—
—
—
—
—
1.0
1.1
1.2
0.9
1.0
1.1
6.4
7.5
9.4
13.9
—
—
—
0.1 x V
DD
0.2 x V
DD
0.2 x V
DD
2.0
2.0
2.0
2.0
2.0
2.0
ns
ns
V
V
mA
1 MHz
27 MHz
70 MHz
150 MHz
–6 mA, DSC1004, C
L
= 40 pF
–6 mA, DSC1003, C
L
= 25 pF
–4 mA, DSC1001, C
L
= 15 pF
6 mA, DSC1004, C
L
= 40 pF
6 mA, DSC1003, C
L
= 25 pF
4 mA, DSC1001, C
L
= 15 pF
DSC1001, C
L
=
15 pF
DSC1003, C
L
= T = +25°C,
25 pF
20% to 80%
DSC1004, C
2
=
40 pF
DSC1001, C
L
=
15 pF
DSC1003, C
L
= T = +25°C,
25 pF
20% to 80%
DSC1004, C
2
=
40 pF
C
L
= 0 pF,
R
L
=
∞,
T = +25°C
J
CC
J
P
—
—
Typ.
1.4
1.5
1.8
1.0
1.1
1.2
60
10
Max.
3.0
3.0
3.0
3.0
3.0
3.0
—
15
ps
ps
RMS
ns
ns
Units
Conditions
DSC1001, C
L
=
15 pF
DSC1003, C
L
= T = +25°C,
25 pF
20% to 80%
DSC1004, C
2
=
40 pF
DSC1001, C
L
=
15 pF
DSC1003, C
L
= T = +25°C,
25 pF
20% to 80%
DSC1004, C
2
=
40 pF
f = 100 MHz (Note
2)
f = 100 MHz (Note
2)
Electrical Characteristics:
V
DD
= 1.8 to 3.3V; T
A
= +85°C unless otherwise specified.
Parameters
Note 1:
t
SU
is time to stable output frequency after V
DD
is applied. t
SU
and t
EN
(after EN is asserted) are identical
values.
2:
Measured over 50k clock cycles.
DS20005529B-page 4
2017 Microchip Technology Inc.
DSC1001/3/4
TABLE 1-1:
DC CHARACTERISTICS (CONTINUED)
Sym.
J
CC
J
P
Min.
—
—
—
Supply Current, No Load
I
DD
—
—
—
0.9 x V
DD
Output Logic Level High
V
OH
0.9 x V
DD
0.8 x V
DD
—
Output Logic Level Low
V
OL
—
—
—
Output Transition Rise
Time
t
R
—
—
—
Output Transition Fall
Time
t
F
—
—
Jitter, Max.
Cycle-to-Cycle
Period Jitter
J
CC
J
P
—
—
Typ.
50
5
6.0
6.8
8.2
10.8
—
—
—
—
—
—
1.0
1.1
1.2
0.9
1.0
1.1
50
5
Max.
—
10
6.5
8.0
10.5
16.6
—
—
—
0.1 x V
DD
0.1 x V
DD
0.2 x V
DD
2.0
2.0
2.0
2.0
2.0
2.0
—
10
ps
ps
RMS
ns
ns
V
V
mA
Units
ps
ps
RMS
Conditions
f = 100 MHz (Note
2)
f = 100 MHz (Note
2)
1 MHz
27 MHz
70 MHz
150 MHz
–8 mA, DSC1004, C
L
= 40 pF
–6 mA, DSC1003, C
L
= 25 pF
–4 mA, DSC1001, C
L
= 15 pF
8 mA, DSC1004, C
L
= 40 pF
6 mA, DSC1003, C
L
= 25 pF
4 mA, DSC1001, C
L
= 15 pF
DSC1001, C
L
=
15 pF
DSC1003, C
L
= T = +25°C,
20% to 80%
25 pF
DSC1004, C
2
=
40 pF
DSC1001, C
L
=
15 pF
DSC1003, C
L
= T = +25°C,
20% to 80%
25 pF
DSC1004, C
2
=
40 pF
f = 100 MHz (Note
2)
f = 100 MHz (Note
2)
C
L
= 0 pF,
R
L
=
∞,
T = +25°C
Electrical Characteristics:
V
DD
= 1.8 to 3.3V; T
A
= +85°C unless otherwise specified.
Parameters
Jitter, Max.
Cycle-to-Cycle
Period Jitter
V
DD
= 3.3V
Note 1:
t
SU
is time to stable output frequency after V
DD
is applied. t
SU
and t
EN
(after EN is asserted) are identical
values.
2:
Measured over 50k clock cycles.
2017 Microchip Technology Inc.
DS20005529B-page 5
嵌入式系统
