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DSC1251DI1-25M00000B

CMOS Output Clock Oscillator

器件类别:无源元件    振荡器   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

下载文档
器件参数
参数名称
属性值
Objectid
7310520370
Reach Compliance Code
compliant
其他特性
ENABLE/DISABLE FUNCTION; TR
频率调整-机械
NO
频率稳定性
50%
安装特点
SURFACE MOUNT
标称工作频率
25 MHz
最高工作温度
85 °C
最低工作温度
-40 °C
振荡器类型
CMOS
输出负载
15 pF
物理尺寸
2.5mm x 2.0mm x 0.9mm
最大供电电压
3.63 V
最小供电电压
2.25 V
表面贴装
YES
最大对称度
55/45 %
文档预览
DSC12X1
High Performance CMOS MEMS Oscillator
Features
• Wide Frequency Range: 2.5 MHz to 170 MHz
(CMOS)
• Very Low RMS Phase Jitter: 650 fs (typ.)
• High Stability: ±20 ppm, ±25 ppm, ±50 ppm
• Wide Temperature Range:
- Automotive: –40°C to +125°C
- Extended Industrial: –40°C to +105°C
- Industrial: –40°C to +85°C
- Commercial: –20°C to +70°C
• Small Industry-Standard Footprints
- 2.5 mm x 2.0 mm
- 3.2 mm x 2.5 mm
- 5.0 mm x 3.2 mm
- 7.0 mm x 5.0 mm
• Excellent Shock and Vibration Immunity
- Qualified to MIL-STD-883
• High Reliability
- 20x Better MTF than Quartz Oscillators
• Supply Range of 2.25V to 3.63V
• Standby, Frequency Select, and Output Enable
Functions
• Lead-Free and RoHS-Compliant
• Contact factory for Automotive-Grade AEC-Q100
Product
General Description
The DSC12x1 family of high performance oscillators
utilizes the latest generation of silicon MEMS
technology that improves phase noise and provides
excellent jitter and stability over a wide range of supply
voltages and temperatures. By eliminating the need for
quartz or SAW technology, MEMS oscillators
significantly enhance reliability and accelerate product
development,
while
meeting
stringent
clock
performance criteria for a variety of communications,
storage, and networking applications.
The DSC12x1 family features a control function on
pin 1 or pin 2 that permits either a standby feature
(complete power down when STDBY is low), output
enable (output is tri-stated with OE low), or a frequency
select (choice of two frequencies selected by FS
high/low). See the
Product Identification System
section for detailed information.
All oscillators are available in industry-standard
packages, including the small 2.5 mm x 2.0 mm, and
are “drop-in” replacements for standard 4-pin and 6-pin
CMOS quartz crystal oscillators.
Package Types
DSC1201/1211/1221
6-Lead CDFN/VDFN
Applications
Storage Area Networks
Passive Optical Networks
10/100G Ethernet
HD/SD/SDI Video and Surveillance
Display Port
OE/STDBY/FS
NC
GND
1
6
VDD
NC
CLK
2
5
3
4
DSC1231/1241/1251
6-Lead CDFN/VDFN
NC
OE/STDBY/FS
GND
1
6
VDD
NC
CLK
2
5
3
4
2019 Microchip Technology Inc.
DS20006010A-page 1
DSC12X1
Functional Block Diagrams
DSC1201/1211/1221
Pin 1
OE/STDBY/FS
DIGITAL
CONTROL
SUPPLY
REGULATION
Pin 6
VDD
Pin 2
NC
MEMS
RESONATOR
TEMP SENSOR +
CONTROL &
COMPENSATION
Pin 5
NC
PLL
OUTPUT
DIV
Pin 3
GND
Pin 4
CLK
DSC1231/1241/1251
Pin 1
NC
DIGITAL
CONTROL
SUPPLY
REGULATION
Pin 6
VDD
Pin 2
OE/STDBY/FS
MEMS
RESONATOR
TEMP SENSOR +
CONTROL &
COMPENSATION
Pin 5
NC
PLL
OUTPUT
DIV
Pin 3
GND
Pin 4
CLK+
DS20006010A-page 2
2019 Microchip Technology Inc.
DSC12X1
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage .......................................................................................................................................... –0.3V to +4.0V
Input Voltage .....................................................................................................................................–0.3V to V
DD
+ 0.3V
ESD Protection (HBM) ............................................................................................................................................... 4 kV
ESD Protection (MM) ................................................................................................................................................400V
ESD Protection (CDM) ............................................................................................................................................ 1.5 kV
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
V
DD
= 2.5V ±10% or 3.3V ±10%; T
A
= –40°C to +125°C, unless noted.
Parameter
Supply Voltage
Supply Current
Symbol
V
DD
I
DD
Standby Current
I
STDBY
∆f
Frequency Stability
Startup Time
t
SU
V
IH
Input Logic Levels
V
IL
Output Disable Time
Output Enable Time
Enable Pull-Up Resistor
Frequency
Output Logic Level High
Output Logic Level Low
t
DA
t
EN
f
0
V
OH
V
OL
0.75 x
V
DD
2.5
0.8 x
V
DD
Output Transition Time, Rise
20% to 80%;C
L
=15 pF
t
R
23
2.5
5.5
1.5
1.3
1.2
1.6
2.4
Min.
2.25
Typ.
27
Max.
3.63
Units
V
mA
Conditions
Note 1
Output enabled, CMOS (no load),
f
OUT
= 100 MHz
Output disabled (tri-state),
f
OUT
= 100 MHz
Input pin = STDBY = Asserted
(V
DD
= 3.3V)
Includes frequency variations due
to initial tolerance, temp., and
power supply voltage
From 90% V
DD
to valid clock
output, T = +25°C,
Note 2
Input logic high
5
±20
±25
±50
6
0.25 x
V
DD
25
6
350
170
0.2 x
V
DD
µA
ppm
ms
V
Input logic low
ns
ms
ns
MΩ
MHz
V
Note 3
STDBY
OE
Pull-up resistor on pin 1,
Note 4
I = ±12 mA (High Drive)
I = ±10 mA (Standard Drive)
I = ±8 mA (Mid Drive)
I = ±6 mA (Low Drive)
Standard Drive Strength
ns
High Drive Strength
Mid Drive Strength
Low Drive Strength
2019 Microchip Technology Inc.
DS20006010A-page 3
DSC12X1
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics:
V
DD
= 2.5V ±10% or 3.3V ±10%; T
A
= –40°C to +125°C, unless noted.
Parameter
Output Transition Time, Fall
20% to 80%;C
L
=15 pF
Output Duty Cycle
Period Jitter, Peak-to-Peak
Cycle-to-Cycle Jitter, Peak
Integrated Phase Noise
(Random)
Note 1:
2:
3:
4:
Symbol
Min.
t
F
SYM
J
PTP
J
CC
J
PH
45
Typ.
1.3
1.1
1.8
2.4
25
22
0.65
Max.
55
%
ps
ps
ps
RMS
ns
Units
Conditions
Standard Drive Strength
High Drive Strength
Mid Drive Strength
Low Drive Strength
f
OUT
= 100 MHz, High Drive
f
OUT
= 100 MHz, High Drive
12 kHz to 20 MHz @ 100 MHz, T
A
= +105°C
V
DD
pin should be filtered with a 0.1 µF capacitor.
t
SU
is the time to 100 ppm stable output frequency after V
DD
is applied and outputs are enabled.
t
DA
: See the
Output Waveform
and the
Test Circuit
sections for more information.
Output is enabled if pad is floated (not connected).
DS20006010A-page 4
2019 Microchip Technology Inc.
DSC12X1
TEMPERATURE SPECIFICATIONS
Parameters
Temperature Ranges
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature
T
J
T
S
–55
+150
+150
+260
°C
°C
°C
Soldering, 40s
Sym.
Min.
Typ.
Max.
Units
Conditions
2019 Microchip Technology Inc.
DS20006010A-page 5
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