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DSC6121CI2A-00AGT

描述：
MEMS Oscillator (FS) Ultra Low Power LVCMOS -40C-85C 25ppm 3.2x2.5mm
分类：
无源元件    振荡器   
文件大小：
510KB，共24页
制造商：
Microchip(微芯科技)
厂商官网：
https://www.microchip.com
标准：
概述
MEMS Oscillator (FS) Ultra Low Power LVCMOS -40C-85C 25ppm 3.2x2.5mm
器件参数
参数名称
属性值
是否Rohs认证
符合
Objectid
8366743395
Reach Compliance Code
compliant
ECCN代码
EAR99
YTEOL
0
其他特性
AEC-Q100; TR; SELECTABLE O/P FREQ
最长下降时间
2.2 ns
频率调整-机械
NO
频率稳定性
25%
安装特点
SURFACE MOUNT
端子数量
4
最大工作频率
100 MHz
最小工作频率
0.002 MHz
最高工作温度
85 °C
最低工作温度
-40 °C
振荡器类型
CMOS
输出负载
10 pF
物理尺寸
3.2mm x 2.5mm x 0.85mm
最长上升时间
2.2 ns
最大供电电压
3.63 V
最小供电电压
1.71 V
表面贴装
YES
最大对称度
55/45 %
文档预览
DSC61XX
Ultra-Small, Ultra-Low Power MEMS Oscillator
Features
• Wide Frequency Range: 2 kHz to 100 MHz
• Ultra-Low Power Consumption: 3 mA/12 µA
(Active/Standby)
• Ultra-Small Footprints
- 1.6 mm
1.2 mm
- 2.0 mm
1.6 mm
- 2.5 mm
2.0 mm
- 3.2 mm
2.5 mm
• Frequency Select Input Supports Two
Pre-Defined Frequencies
• High Stability: ±25 ppm, ±50 ppm
• Wide Temperature Range
- Industrial: –40°C to 85°C
- Ext. Commercial: –20° to 70°C
• Excellent Shock and Vibration Immunity
- Qualified to MIL-STD-883
• High Reliability
- 20x Better MTF Than Quartz Oscillators
• Supply Range of 1.71V to 3.63V
• Short Sample Lead Time: <2 weeks
• Lead Free & RoHS Compliant
General Description
The DSC61xx family of MEMS oscillators combines the
industry leading low power consumption and
ultra-small packages with exceptional frequency
stability and jitter performance over temperature. The
single-output DSC61xx MEMS oscillators are excellent
choices for use as clock references in small,
battery-powered devices such as wearable and
Internet of Things (IoT) devices in which small size, low
power consumption, and long-term reliability are
paramount. They also meet the stringent mechanical
durability and reliability requirements within Automotive
Electronics Council standard Q100 (AEC-Q100), so
they are well suited for under-hood applications as well.
The DSC61xx family is available in ultra-small
1.6 mm x 1.2 mm and 2.0 mm x 1.6 mm packages.
Other package sizes include: 2.5 mm x 2.0 mm and
3.2 mm x 2.5 mm. These packages are “drop-in”
replacements for standard 4-pin CMOS quartz crystal
oscillators.
Package Types
DSC61
XX
3.2 mm x 2.5 mm DFN
2.5 mm x 2.0 mm LGA
2.0 mm x 1.6 mm LGA
1.6 mm x 1.2 mm LGA
(Top View)
Applications
• Low Power/Portable Applications: IoT,
Embedded/Smart Devices
• Consumer: Home Healthcare, Fitness Devices,
Home Automation
• Automotive: Rear View/Surround View Cameras,
Infotainment System
• Industrial: Building/Factory Automation,
Surveillance Camera
OE/STBY/FS
1
4
VDD
GND
2
3
OUT
2017 Microchip Technology Inc.
DS20005624B-page 1
DSC61XX
Block Diagram
DSC6101/02/11/12/21/22/41/42/51/52/61/62
DIGITAL
CONTROL
OE/STBY/FS
PIN 1
SUPPLY
REGULATION
VDD
PIN 4
MEMS
RESONATOR
TEMP SENSOR
CONTROL &
COMPENSATION
PLL
VCO
OUTPUT
DIVIDER
DRIVER
OUTPUT
PIN 3
GND
PIN 2
DSC6183 (kHz Output)
SUPPLY
REGULATION
DRIVER
P1
OUTPUT
P4
VDD
MEMS
RESONATOR
P2
GND
TEMP SENSOR
CONTROL &
COMPENSATION
PLL
VCO
OUTPUT
DIVIDER
P3
DNC
DS20005624B-page 2
2017 Microchip Technology Inc.
DSC61XX
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Supply Voltage .......................................................................................................................................... –0.3V to +4.0V
Input Voltage (V
IN
) ..............................................................................................................................–0.3V to V
DD
+0.3V
ESD Protection ............................................................................................................ 4 kV HBM, 400V MM, 2 kV CDM
ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= 1.8V –5% to 3.3V +10%, T
A
= –40°C to 85°C.
Parameters
Supply Voltage,
Note 1
Power Supply Ramp
Active Supply Current
Standby Supply Current
Note 2
Frequency Stability
Note 3
Aging
Startup Time
Input Logic Levels
Note 4
Output Disable Time
Note 5
Output Enable Time
Note 6
Enable Pull-up Resistor
Note 7
Sym.
V
DD
t
PU
I
DD
I
STBY
∆f
∆f
t
SU
V
IH
V
IL
t
DA
t
EN
—
Min.
1.71
0.1
—
—
—
—
—
—
—
0.7 x V
DD
—
—
—
—
Typ.
—
—
3.0
12
80
—
—
—
—
—
—
—
—
300
Max.
3.63
100
—
—
—
±25
±50
±5
±1
1.3
—
0.3 x V
DD
200+Period
1
—
Units
V
ms
mA
µA
ppm
ppm
ms
V
V
ns
µs
kΩ
Conditions
—
Note 8
F
OUT
= 27 MHz, V
DD
= 1.8V,
No Load
V
DD
= 1.8/2.5V
V
DD
= 3.3V
All temp ranges
1st year @ 25°C
Per year after first year
From 90% V
DD
to valid clock
output, T = 25°C
Input Logic High
Input Logic Low
—
—
If configured
Output Logic High, I = 3 mA,
Std. Drive
Output Logic High, I = 6 mA,
High Drive
Output Logic Low, I = –3 mA,
Std. Drive
Output Logic Low, I = –3 mA,
High Drive
V
OH
Output Logic Levels
V
OL
0.8 x V
DD
—
—
V
—
—
0.2 x V
DD
V
Note 1:
2:
3:
4:
5:
6:
7:
8:
Pin 4 V
DD
should be filtered with 0.1 µF capacitor.
Not including current through pull-up resistor on EN pin (if configured). Higher standby current seen at
>3.3V V
DD
.
Includes frequency variations due to initial tolerance, temp. and power supply voltage.
Input waveform must be monotonic with rise/fall time < 10 ms
Output Disable time takes up to one period of the output waveform + 200 ns.
For parts configured with OE, not Standby.
Output is enabled if pad is floated or not connected.
Time to reach 90% of target V
DD
. Power ramp rise must be monotonic.
2017 Microchip Technology Inc.
DS20005624B-page 3
DSC61XX
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated, V
DD
= 1.8V –5% to 3.3V +10%, T
A
= –40°C to 85°C.
Parameters
Sym.
Min.
—
t
RX
/t
FX
Output Transition Time
Rise Time/Fall Time
t
RY
/t
FY
—
Frequency
Output Duty Cycle
Period Jitter, RMS
Cycle-to-Cycle Jitter
(peak)
Note 1:
2:
3:
4:
5:
6:
7:
8:
f
0
SYM
J
PER
J
Cy–Cy
0.002
45
—
—
—
—
1.5
—
—
9.5
7.5
50
35
2.2
100
55
11
9
70
60
ns
MHz
%
ps
RMS
ps
F
OUT
=
27 MHz
F
OUT
=
27 MHz
—
—
0.5
1.2
1.0
2.0
ns
ns
Typ.
1
Max.
1.5
Units
ns
Conditions
DSC61x2
V
DD
= 1.8V
High Drive,
20% to 80%
C
L
= 15 pF V
DD
= 2.5V/3.3V
DSC61x1
V
DD
= 1.8V
Std Drive,
20% to 80%
C
L
= 10 pF V
DD
= 2.5V/3.3V
Output on Pin 1 for < 1 MHz
—
V
DD
= 1.8V
V
DD
= 2.5V/3.3V
V
DD
= 1.8V
V
DD
= 2.5V/3.3V
Pin 4 V
DD
should be filtered with 0.1 µF capacitor.
Not including current through pull-up resistor on EN pin (if configured). Higher standby current seen at
>3.3V V
DD
.
Includes frequency variations due to initial tolerance, temp. and power supply voltage.
Input waveform must be monotonic with rise/fall time < 10 ms
Output Disable time takes up to one period of the output waveform + 200 ns.
For parts configured with OE, not Standby.
Output is enabled if pad is floated or not connected.
Time to reach 90% of target V
DD
. Power ramp rise must be monotonic.
DS20005624B-page 4
2017 Microchip Technology Inc.
DSC61XX
TEMPERATURE SPECIFICATIONS (Note
1)
Parameters
Temperature Ranges
Junction Operating Temperature
Ambient Operating Temperature
Ambient Operating Temperature
Storage Ambient Temperature Range
Soldering Temperature
Note 1:
T
J
T
A
T
A
T
A
T
S
—
–40
–20
–55
—
—
—
—
—
+260
+150
+85
+70
+150
—
°C
°C
°C
°C
°C
—
Industrial
Extended Commercial
—
40 sec. max.
Sym.
Min.
Typ.
Max.
Units
Conditions
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the max-
imum allowable power dissipation will cause the device operating junction temperature to exceed the max-
imum +150°C rating. Sustained junction temperatures above +150°C can impact the device reliability.
2017 Microchip Technology Inc.
DS20005624B-page 5
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