首页 > 器件类别 > 分立半导体 > 快恢复二极管

DSEI2X61-12B

直流反向耐压(Vr):1.2kV 平均整流电流(Io):2 x 52A 正向压降(Vf):2.5V @ 60A 反向恢复时间(trr):40ns

器件类别:分立半导体    快恢复二极管   

厂商名称:IXYS ( Littelfuse )

厂商官网:http://www.ixys.com/

下载文档
DSEI2X61-12B 在线购买

供应商:

器件:DSEI2X61-12B

价格:-

最低购买:-

库存:点击查看

点击购买

器件参数
参数名称
属性值
直流反向耐压(Vr)
1.2kV
平均整流电流(Io)
2 x 52A
正向压降(Vf)
2.5V @ 60A
反向恢复时间(trr)
40ns
文档预览
DSEI 2x 61-12B
Fast Recovery
Epitaxial Diode (FRED)
I
FAVM
= 2x 52 A
V
RRM
= 1200 V
t
rr
= 40 ns
V
RSM
V
1200
V
RRM
V
1200
Type
miniBLOC, SOT-227 B
DSEI 2x 61-12B
E72873
Symbol
I
FRMS
I
FAVM
I
FRM
I
FSM
Conditions
Maximum Ratings (per diode)
100
52
700
450
500
400
440
1000
1050
800
810
-40...+150
150
-40...+150
A
A
A
A
A
A
A
As
A
2
s
A
2
s
A
2
s
°C
°C
°C
W
V~
2
Features
T
VJ
= T
VJM
T
C
= 50°C; rectangular, d = 0.5
t
P
< 10
µs;
rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
It
2
T
VJ
= 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
International standard package
miniBLOC (ISOTOP compatible)
Isolation voltage 2500 V~
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
M
d
Weight
Symbol
I
R
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 60 A;
V
R
= V
RRM
V
R
= 0.8 • V
RRM
V
R
= 0.8 • V
RRM
T
VJ
= 150°C
T
VJ
= 25°C
T
C
= 25°C
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque
Terminal connection torque (M4)
Applications
180
2500
1.5/13
1.5/13
30
Nm/lb.in.
Nm/lb.in.
g
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Characteristic Values (per diode)
typ.
max.
2.2
0.5
14
2.15
2.50
1.65
8.3
0.7
0.05
mA
mA
mA
V
V
V
mΩ
K/W
K/W
60
36
ns
A
Advantages
V
F
V
T0
r
T
R
thJC
R
thCK
t
rr
I
RM
For power-loss calculations only
T
VJ
= T
VJM
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
I
F
= 1 A; -di/dt = 200 A/µs; V
R
= 30 V; T
VJ
= 25°C
V
R
= 540 V; I
F
= 60 A; -di
F
/dt = 480 A/µs
L
0.05
µH;
T
VJ
= 100°C
40
32
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
20170315a
© 2017 IXYS All rights reserved
1-3
DSEI 2x 61-12B
miniBLOC, SOT-227 B
J
K
Z
Nut M4 DIN 934
Lens Head
Screw M4x8
DIN 7985
H
A
G
B
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
Z
4
D
3
C
1
S
2
L
P
E
F
Q
U
Millimeter
min
max
31.50
31.88
7.80
8.20
4.09
4.29
4.09
4.29
4.09
4.29
14.91
15.11
30.12
30.30
37.80
38.23
11.68
12.22
8.92
9.60
0.74
0.84
12.50
13.10
25.15
25.42
1.95
2.13
6.20
4.95
26.90
26.54
4.42
3.94
4.55
4.85
24.59
25.25
-0.05
0.10
3.20
5.50
19.81
21.08
2.50
2.70
Inches
min
max
1.240
1.255
0.307
0.323
0.161
0.169
0.161
0.169
0.161
0.169
0.587
0.595
1.186
1.193
1.488
1.505
0.460
0.481
0.351
0.378
0.029
0.033
0.492
0.516
0.990
1.001
0.077
0.084
0.195
0.244
1.045
1.059
0.155
0.167
0.179
0.191
0.968
0.994
-0.002 0.004
0.126
0.217
0.780
0.830
0.098
0.106
T
V
M
W
N
O
IXYS reserves the right to change limits, test conditions and dimensions.
R
20170315a
© 2017 IXYS All rights reserved
2-3
DSEI 2x 61-12B
90
80
10
70
60
T
VJ
= 25°C
100°C
150°C
12
T
VJ
= 100°C
V
R
= 540 V
80
T
VJ
= 100°C
V
R
= 540 V
max.
60
8
I
F
= 60 A
120 A
60 A
30 A
max.
I
F
50
[A]
40
30
20
Q
r
6
I
RM
[A]
40
I
F
= 60 A
120 A
60 A
30 A
[ C]
4
2
typ.
20
typ.
10
0
0
1
2
3
4
0
10
100
0
1000
0
200
400
600
800
1000
V
F
[V]
Fig. 1 Forward current
vs. voltage drop
1.4
1.2
0.8
1.0
0.8
1.0
-di
F
/dt [A/ s]
Fig. 2 Recovery charge
versus -di
F
/dt
60
50
max.
I
F
= 60 A
120 A
60 A
30 A
-di
F
/dt [A/ s]
Fig. 3 Peak reverse current
versus -di
F
/dt
1200
T
VJ
= 125°C
I
F
= 60 A
1000
T
VJ
= 100°C
V
R
= 540 V
40
800
K
F
0.6
0.4
0.2
0.0
0
I
RM
Q
R
t
rr
0.6
V
FR
[V]
30
20
t
fr
600
[ s]
0.4
t
fr
[ns]
400
0.2
typ.
10
0
V
FR
200
0.0
40
80
120
160
0
200
400
600
800
1000
0
0
200
400
600
800
1000
T
J
[°C]
Fig. 4 Dyn. parameters vs.
junction temperature
-di
F
/dt [A/ s]
Fig. 5 Recovery time
versus -di
F
/dt
-di
F
/dt [A/ s]
Fig. 6 Peak forward voltage
versus -di
F
/dt
1
Z
thJC
0.1
[K/W]
0.01
0.0001
0.001
0.01
0.1
1
10
t [ms]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, test conditions and dimensions.
20170315a
© 2017 IXYS All rights reserved
3-3
查看更多>
参数对比
与DSEI2X61-12B相近的元器件有:。描述及对比如下:
型号 DSEI2X61-12B
描述 直流反向耐压(Vr):1.2kV 平均整流电流(Io):2 x 52A 正向压降(Vf):2.5V @ 60A 反向恢复时间(trr):40ns
直流反向耐压(Vr) 1.2kV
平均整流电流(Io) 2 x 52A
正向压降(Vf) 2.5V @ 60A
反向恢复时间(trr) 40ns
热门器件
热门资源推荐
器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
需要登录后才可以下载。
登录取消