DSEI60-06A
DSEI60-06AT
Fast Recovery
Epitaxial Diode (FRED)
V
RSM
V
600
600
V
RRM
V
600
600
DSEI 60-06A
DSEI 60-06AT
Type
I
FAV
= 60 A
V
RRM
= 600 V
t
rr
= 35 ms
TO-247 AD
C
A
A
C
C
TO-268 AA
(AT Type)
A
A
A = Anode, C = Cathode
C
Symbol
I
FRMS
I
FAVM
I
FRM
I
FSM
Conditions
T
C
= 70°C; rectangular, d = 0.5
t
p
< 0 µs; rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C;
t = 0 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
00
60
550
600
480
520
50
490
50
20
-55...+50
50
-55...+50
A
A
A
A
A
2
s
A
2
s
°C
°C
°C
W
Nm
g
Features
• International standard package
JEDEC TO-247 AD
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Anti saturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
T
VJ
= 50°C; t = 0 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
I
2
t
T
VJ
= 45°C;
t = 0 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
= 50°C; t = 0 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
Symbol
I
R
T
C
= 25°C
mounting torque
typical
Conditions
V
R
= V
RRM
V
R
= 0.8·V
RRM
V
R
= 0.8·V
RRM
I
F
= 70 A
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 50°C
T
VJ
= 25°C
66
0.8....2
6
Characteristic Values
typ.
max.
200
00
4
.5
.8
.3
4.7
0.75
0.25
35
6.0
50
7.5
µA
µA
mA
V
V
V
mW
K/W
K/W
ns
A
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
• Operating at lower temperature or
space saving by reduced cooling
V
F
V
T0
r
T
R
thJC
R
thCH
t
rr
I
RM
For power-loss calculations only
T
VJ
= T
VJM
(version A)
I
F
= A; -di/dt = 200 A/µs; V
R
= 30 V; T
VJ
= 25°C
V
R
= 350 V; I
F
= 60 A; -di
F
/dt = 480 A/µs
L < 0.05 µH; T
VJ
= 00°C
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
-3
2007049
I
FAVM
rating includes reverse blocking losses at T
VJM
. V
R
=
0.8·V
RRM
,
duty cycle d = 0.5
DSEI 60-06A
DSEI 60-06AT
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -di
F
/dt.
Fig. 3 Peak reverse current versus
-di
F
/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -di
F
/dt.
Fig. 6 Peak forward voltage
versus di
F
/dt.
Fig. 7 Transient thermal impedance junction to case.
0549
IXYS reserves the right to change limits, test conditions and dimensions
© 2007 IXYS All rights reserved
2-2
DSEI60-06A
DSEI60-06AT
Dimensions TO-247 AD
C
F
L
Dim.
A
B
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32
5.4
1.65
-
1.0
10.8
4.7
0.4
1.5
5.49
6.2
2.13
4.5
1.4
11.0
5.3
0.8
2.49
Inches
Min.
Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
E
B
D
H
C
D
E
F
A
G
H
J
K
G
K
Dimensions TO-268 AA
J
M
N
L
M
N
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
3-3
2007049
