DSEP8-06A
HiPerFRED
V
RRM
I
FAV
t
rr
=
=
=
600 V
10 A
30 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSEP8-06A
Backside: cathode
3
1
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
Package:
TO-220
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160926
© 2016 IXYS all rights reserved
DSEP8-06A
Fast Diode
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
1.03
25
0.50
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
= 400 V f = 1 MHz
I
F
=
10 A; V
R
= 300 V
T
VJ
= 45°C
T
VJ
= 25°C
T
VJ
= 25 °C
T
VJ
= 100 °C
T
VJ
= 25 °C
T
VJ
= 100 °C
-di
F
/dt = 200 A/µs
6
3.5
6
30
90
60
50
V
mΩ
K/W
W
A
pF
A
A
ns
ns
min.
typ.
max. Unit
600
V
600
60
0.25
2.10
2.32
1.42
1.68
10
V
µA
mA
V
V
V
V
A
max. non-repetitive reverse blocking voltage
V
R
= 600 V
V
R
= 600 V
I
F
=
I
F
=
I
F
=
I
F
=
10 A
20 A
10 A
20 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
I
RM
t
rr
average forward current
T
C
= 135 °C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
2.5 K/W
reverse recovery time
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160926
© 2016 IXYS all rights reserved
DSEP8-06A
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
mounting torque
mounting force with clip
TO-220
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-55
-55
-55
typ.
max.
35
175
150
150
Unit
A
°C
°C
°C
g
Nm
N
2
0.4
20
0.6
60
Product Marking
Part Number
Logo
Assembly Line
Lot #
Date Code
XXXXXX
Zyyww
abcdef
Ordering
Standard
Ordering Number
DSEP8-06A
Marking on Product
DSEP8-06A
Delivery Mode
Tube
Quantity
50
Code No.
474711
Similar Part
DSEP8-06B
Package
TO-220AC (2)
Voltage class
600
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Fast
Diode
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
1.03
22
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160926
© 2016 IXYS all rights reserved
DSEP8-06A
Outlines TO-220
= supplier option
A
Dim.
A
A1
A2
b
b2
C
D
E
e
H1
L
L1
ØP
Q
Q
E
A1
Millimeter
Min.
Max.
4.32
1.14
2.29
0.64
1.15
0.35
14.73
9.91
5.08
5.85
12.70
2.79
3.54
2.54
4.82
1.39
2.79
1.01
1.65
0.56
16.00
10.66
BSC
6.85
13.97
5.84
4.08
3.18
Inches
Min.
Max.
0.170
0.045
0.090
0.025
0.045
0.014
0.580
0.390
0.200
0.230
0.500
0.110
0.139
0.100
0.190
0.055
0.110
0.040
0.065
0.022
0.630
0.420
BSC
0.270
0.550
0.230
0.161
0.125
ØP
4
1
3
2x b2
L1
2x b
e
L
D
H1
C
A2
3
1
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160926
© 2016 IXYS all rights reserved
DSEP8-06A
Fast Diode
30
25
T
VJ
= 150°C
20
T
VJ
= 100°C
T
VJ
= 25°C
15
1.4
1.2
1.0
0.8
0.6
10
5
0
0.0
I
F
= 20 A
I
F
= 10 A
I
F
= 5 A
T
VJ
= 100°C
V
R
= 300 V
30
40
T
VJ
= 100°C
V
R
= 300 V
I
F
= 20 A
I
F
= 10 A
I
F
= 5 A
I
F
[A]
Q
r
[μC]
I
RM
20
[A]
10
0.4
0.2
0.0
100
0
1000
0
200
400
600
800
1000
0.5
1.0
1.5
2.0
2.5
V
F
[ V ]
Fig. 1 Forward current
I
F
versus V
F
-di
F
/dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Q
r
versus -di
F
/dt
-di
F
/dt [A/μs]
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
2.0
120
T
VJ
= 100°C
V
R
= 300 V
20
T
VJ
= 100°C
I
F
= 10 A
15
1.2
110
1.5
100
0.9
t
fr
0.6
[μs]
K
f
1.0
I
RM
0.5
Q
r
0.0
0
40
80
120
160
trr
90
I
F
= 20 A
I
F
= 10 A
I
F
= 5 A
VFR
10
[ns]
80
[V]
5
V
FR
t
rr
0.3
70
0
0
200
400
600
800
1000
0
200
400
600
800
0.0
1000
T
VJ
[°C]
Fig. 4 Dynamic parameters
Q
r
, I
RM
versus T
VJ
10
-di
F
/dt [A/μs]
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
-di
F
/dt [A/μs]
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Constants for Z
thJC
calculation:
1
Z
thJC
0.1
i
1
2
3
R
thi
[K/W]
1.449
0.5578
0.4931
t
i
[s]
0.0052
0.0003
0.0169
[K/W]
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t [s]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160926
© 2016 IXYS all rights reserved
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