FM120-M
DTA144EUA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
.004(0.10)MIN.
•
Features
•
•
Mechanical data
isolation to allow negative biasing of the input. They also have the
advantage of
:
almost completely eliminating parasitic effects.
•
Epoxy UL94-V0 rated flame retardant
Only the on/off conditions need to be set for operation, making
•
Case : Molded plastic, SOD-123H
device design easy
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.024(0.6)
.010(0.25)
.003(0.08)
0.031(0.8) Typ.
0.031(0.8) Typ.
Typ
Max
Unit
-50
---
V
V
IN
Input voltage
---
10
V
-30
I
O
Output
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
current
---
---
mA
I
C(MAX)
-100
P
d
Power
ambient temperature unless otherwise specified.
---
---
200
mW
Ratings at 25℃
dissipation
T
j
Junction temperature
resistive of inductive
---
150
---
Single phase half wave, 60Hz,
load.
T
stg
capacitive load, derate current by 20%
Storage temperature
-55
---
150
For
RATINGS
Min
---
-40
.056(1.40)
Marking Code
Electrical Characteristics @ 25
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
.047(1.20)
Maximum Recurrent Peak Reverse Voltage
V
RRM
Max
Symbol
Parameter
Min
Typ
28
Maximum RMS Voltage
(V
CC
=-5V, I
O
=-100A)
V
RMS
---
14
---
V
I(off)
-0.5
Input voltage
---
DC
---
20
-3.0
V
I(on)
(V
O
=-0.3V, I
O
=-2mA)
Maximum DC Blocking Voltage
40
V
V
O(on)
Output voltage (I
O
/I
I
-10mA/-0.5mA
=
---
---
-0.3
Maximum Average Forward Rectified Current
I
I
=
I
-5V)
Input current (V
---
I
O
---
-0.18
I
O(off)
Output current (V
CC
=
I
0)
=-50V, V
---
---
-0.5
Peak Forward Surge Current 8.3 ms single half sine-wave
G
I
DC current gain (V
O
=-5V, I
O
-5mA)
=
68
I
FSM
---
---
superimposed on
resistance
(JEDEC method)
rated load
R
1
Input
32.9
47
61.1
K¡
Typical
Resistance ratio
R
R
2
/R
1
Thermal Resistance (Note 2)
0.8
ΘJA
1.0
1.2
MHz
Transition frequency
Typical Junction Capacitance (Note 1)
f
T
---
C
J
250
---
(V
O
=-10V, I
O
=5mA, f=100MHz)
-55 to +125
Operating Temperature Range
T
J
Storage Temperature Range
TSTG
12
20
Dimensions in inches and
+150
-55 to
(millimeters)
-
65
to +175
120
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
*Marking:
Rated DC Blocking Voltage
Suggested
FM1100-MH
FM1150-MH
FM1200-MH
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
Solder
V
F
0.50
0.70
10
0.90
Pad Layout
0.85
0.70
0.5
.043(1.10)
.032(0.80)
13
30
Unit
21
V
30
V
V
mA
A
14
40
15
50
35
16
60
.054(1.35)
.045(1.15)
•
maximum ratings @ 25
Absolute
Polarity : Indicated by cathode band
Symbol
•
Mounting Position : Any
Parameter
V
CC
Supply voltage
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
.087(2.20)
.070(1.80)
18
80
56
10
100
70
.096(2.45)
.078(2.00)
0.040(1.0)
•
•
•
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
Pb-Free package is available
•
High surge capability.
RoHS product for
overvoltage protection.
”G”
•
Guardring for
packing code suffix
•
Ultra high-speed
for packing code suffix “H”
Halogen free product
switching.
Epoxy meets
epitaxial planar chip, metal
rating
junction.
•
Silicon
UL 94 V-0 flammability
silicon
Moisure Sensitivity Level 1
•
Lead-free parts meet environmental standards of
Built-in
MIL-STD-19500
enable the configuration of an inverter circuit
bias resistors
/228
•
connecting external
code
resistors
without
RoHS product for packing
input
suffix "G"
Halogen free
consist of thin-film resistors
The bias resistors
product for packing code suffix "H"
with complete
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
115
150
105
150
120
200
140
42
50
.004(0.10)MAX.
80
60
100
1.0
30
.016(0.40)
.008(0.20)
40
200
0.9
0.92
@T A=125℃
16
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
1.90 mm
2- Thermal Resistance From Junction to Ambient
0.65
0.65
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
FM120-M
DTA144EUA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
