CYStech Electronics Corp.
NPN Digital Transistors (Built-in Resistors)
Spec. No. : C380N3
Issued Date : 2005.04.15
Revised Date :2005.06.24
Page No. : 1/6
DTD143TN3
Features
•
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
•
The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
•
Only the on/off conditions need to be set for operation, making device design easy.
•
Complements the DTB143TN3
•
Pb-free package
Equivalent Circuit
DTD143TN3
Outline
SOT-23
R1=4.7kΩ ,
B : Base
C : Collector
E : Emitter
Absolute Maximum Ratings
(Ta=25℃)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
50
40
5
600
200
150
-55 ~ +150
Unit
V
V
V
mA
mW
°C
°C
DTD143TN3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25℃)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation
Voltage
DC Current Gain
Input Resistance
Transition Frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
Spec. No. : C380N3
Issued Date : 2005.04.15
Revised Date :2005.06.24
Page No. : 2/6
Min. Typ. Max. Unit
Test Conditions
50
-
-
V I
C
=50µA
40
5
-
-
-
100
3.29
-
-
-
-
-
40
-
4.7
200
-
-
0.5
0.5
60
V
V
µA
µA
mV
I
C
=1mA
I
E
=50µA
V
CB
=50V
V
EB
=4V
I
C
=50mA, I
B
=2.5mA
600
-
V
CE
=5V, I
C
=50mA
6.11 kΩ -
-
MHz V
CE
=10V, I
C
=50mA, f=100MHz *
*
Transition frequency of the device
Ordering Information
Device
DTD143TN3
Package
SOT-23
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
F03
DTD143TN3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
Saturation Voltage---(mV)
1000
Spec. No. : C380N3
Issued Date : 2005.04.15
Revised Date :2005.06.24
Page No. : 3/6
Saturation Voltage vs Collector Current
Current Gain---
HFE
100
VCESAT@IC=20IB
VCE=5V
100
0.1
1
10
100
Collector Current---IC(mA)
1000
10
0.1
1
10
100
Collector Current --- IC(mA)
1000
Power Derating Curve
250
Power Dissipation---PD(mW)
200
150
100
50
0
0
50
100
150
Ambient Temperature --- Ta(℃ )
200
DTD143TN3
CYStek Product Specification
CYStech Electronics Corp.
Product Designation
Spec. No. : C380N3
Issued Date : 2005.04.15
Revised Date :2005.06.24
Page No. : 4/6
DT X X X X X
(1)
(2)
(3)
(4)
(5)
(6)
XX
(7)
(1) Indicates that transistor is digital
(2) Indicates polarity
A, B
‧‧‧‧
PNP
C, D
‧‧‧‧
NPN
(3) Indicates device specification
(4) Indicates the basis of the R
1
resistance value
1‧‧‧1.0
2‧‧‧2.2
3‧‧‧3.3
4‧‧‧4.7
6‧‧‧6.8
(5) Indicates power-of-ten of R
1
value
3‧‧‧10
4‧‧‧10
3
4
(6) Indicates resistance ratio R
1
/R
2
E
‧‧‧R
1
/R
2
=1/1
X
‧‧‧R
1
/R
2
=2/1
Y
‧‧‧R
1
/R
2
=5/1
Z
‧‧‧R
1
/R
2
=10/1
J
‧‧‧R
1
/R
2
=20/1
W‧‧‧R
1
/R
2
=1/2
U
‧‧‧R
1
/R
2
=1/5
V
‧‧‧R
1
/R
2
=1/10
T
‧‧‧R
1
only
G
‧‧‧T
2
only
(7) Indicates package shape
N3‧‧‧SOT-23
A3‧‧‧TO-92
The value of R1 is indicates by combining (4) and (5)
24‧‧‧2.2×10 =22kΩ
43‧‧‧4.7×10 =22kΩ
3
4
DTD143TN3
CYStek Product Specification
CYStech Electronics Corp.
Recommended IR reflow profile
Spec. No. : C380N3
Issued Date : 2005.04.15
Revised Date :2005.06.24
Page No. : 5/6
DTD143TN3
CYStek Product Specification
Microchip MCU
