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DTC114Y_15

NPN DIGITAL TRANSISTOR

厂商名称:UNISONIC TECHNOLOGIES CO.,LTD

厂商官网:http://www.unisonic.com.tw/

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UNISONIC TECHNOLOGIES CO., LTD
DTC114Y
NPN DIGITAL TRANSISTOR
(BUILT- IN BIAS RESISTORS)
FEATURES
NPN SILICON TRANSISTOR
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Package
SOT-23
SOT-323
SOT-523
TO-92
TO-92
TO-92SP
TO-92SP
Pin Assignment
1
2
3
G
I
O
G
I
O
G
I
O
G
O
I
G
O
I
G
O
I
G
O
I
Packing
Tape Reel
Tape Reel
Tape Reel
Bulk
Tape Box
Bulk
Tape Box
Ordering Number
Lead Free
Halogen Free
-
DTC114YG-AE3-R
-
DTC114YG-AL3-R
-
DTC114YG-AN3-R
DTC114YL-T92-K
DTC114YG-T92-K
DTC114YL-T92-B
DTC114YG-T92-B
DTC114YL-T9S-K
DTC114YG-T9S-K
DTC114YL-T9S-B
DTC114YG-T9S-B
Note: Pin Assignment: G: GND
I: IN
O: OUT
MARKING
SOT-23 / SOT-323 / SOT-523
TO-92
TO-92SP
CB4Y
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R223-003.F
DTC114Y
PARAMETER
SYMBOL
V
CC
V
IN
I
OUT
I
O(MAX.)
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless others specified)
RATINGS
UNIT
Supply Voltage
50
V
Input Voltage
-6 ~ +40
V
70
mA
Output Current
100
mA
SOT-23/SOT-323
200
SOT-523
150
Power Dissipation
P
D
mW
TO-92
625
TO-92SP
550
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS
(T
A
=25°C, unless others specified)
PARAMETER
MIN
1.4
0.1
0.3
0.88
0.5
13
5.7
MHz
TYP
MAX
0.3
UNIT
V
V
V
mA
μA
KΩ
SYMBOL
TEST CONDITIONS
V
IN(OFF)
V
CC
=5V, I
OUT
=100μA
Input Voltage
V
IN(ON)
V
OUT
=0.3V, I
OUT
=1mA
Output Voltage
V
OUT(ON)
I
OUT
/I
IN
=5mA/0.25mA
Input Current
I
IN
V
IN
=5V
Output Current
I
OUT(OFF)
V
CC
=50V, V
IN
=0V
DC Current Gain
h
FE
V
OUT
=5V, I
OUT
=5mA
Input Resistance
R
1
R
2
Resistor Ratio
R
1
Transition Frequency
f
T
V
CE
=10V, I
E
=−5mA, f=100MHz
Note: Transition frequency of the device
68
7
3.7
10
4.7
250
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R223-003.F
DTC114Y
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R223-003.F
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