DTD123EK / DTD123ES
Transistors
500mA / 50V Digital transistors
(with built-in resistors)
DTD123EK / DTD123ES
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for
operation, making the device design easy.
External dimensions
(Unit : mm)
DTD123EK
2.9
0.4
(3)
1.6
2.8
1.1
0.8
(2)
(1)
0.95 0.95
0.15
1.9
ROHM : SMT3
EIAJ : SC-59
(1) GND
(2) IN
(3) OUT
Each lead has same dimension
Abbreviated symbol: F22
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
DTD123ES
3.0
4.0
2.0
(15Min.)
Package specifications
Package
Packaging type
Code
SMT3
Taping
T146
3000
−
SPT
Taping
3Min.
0.45
TP
5000
−
ROHM : SPT
EIAJ : SC-72
2.5
5.0
(1) (2) (3)
0.5
0.45
Part No.
DTD123EK
DTD123ES
Basic ordering unit (pieces)
(1) GND
(2) OUT
(3) IN
Taping specifications
Abbreviated symbol: D123ES
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CC
V
IN
I
C
Pd
Tj
Tstg
200
150
−55
to
+150
Limits
DTD123EK DTD123ES
50
−10
to
+12
500
300
Unit
Equivalent circuit
R
1
OUT
V
V
mA
mW
C
IN
R
2
GND
IN
GND
OUT
C
R
1
=R
2
=2.2kΩ
Rev.B
0.3Min.
1/2
DTD123EK / DTD123ES
Transistors
Electrical characteristics
(Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
∗
Min.
−
3
−
−
−
39
1.54
0.8
−
Typ.
−
−
0.1
−
−
−
2.2
1
200
Max.
0.5
−
0.3
3.8
0.5
−
2.86
1.2
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
V
CC
=
5V, I
O
=
100µA
V
O
=
0.3V, I
O
=
20mA
I
O
/I
I
=
50mA/2.5mA
V
I
=
5V
V
CC
=
50V, V
I
=
0V
V
O
=
5V, I
O
=
50mA
−
−
V
CE
=
10V, I
E
=
−50mA,
f
=
100MHz
∗
Characteristics of built-in transistor.
Electrical characteristics curves
100
50
V
O
=0.3V
OUTPUT CURRENT : Io
(A)
10m
5m
V
CC
=5V
1k
500
V
O
=5V
Ta=100 C
25 C
−40
C
INPUT VOLTAGE : V
I(on)
(V)
20
10
5
2
1
500m
200m
100m
500
µ
1m
2m
5m 10m 20m
50m 100m 200m 500m
DC CURRENT GAIN : G
I
1.0
1.5
2.0
2.5
3.0
Ta=100 C
25 C
2m
−40
C
1m
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
0.5
200
100
50
20
10
5
2
1
500µ 1m
2m
Ta=
−40
C
25 C
100 C
5m 10m 20m
50m 100m 200m 500m
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I(off)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain
vs. output current
1
500m
l
O
/l
I
=20
Ta=100 C
25 C
−40
C
OUTPUT VOLTAGE : V
O(on)
(V)
200m
100m
50m
20m
10m
5m
2m
1m
500µ 1m
2m
5m 10m 20m
50m 100m 200m 500m
OUTPUT CURRENT : I
O
(A)
Fig.4 Output voltage vs. output current
Rev.B
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
