200mA / 30V Low V
CE
(sat) Digital transistors
(with built-in resistors)
DTD713ZE / DTD713ZM
Applications
Inverter, Interface, Driver
Feature
1) V
CE
(sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation,
making the device design easy.
Dimensions
(Unit : mm)
DTD713ZE
1.6
0.3
(3)
0.7
0.55
0.8
(2)
(1)
1.6
0.2
0.5 0.5
1.0
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.2
0.15
0.1Min.
0.13
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : P21
DTD713ZM
0.2
0.8
1.2
0.22
(1)(2)
1.2
0.32
(3)
Structure
NPN epitaxial plannar silicon transistor
(Resistor built-in type)
VMT3
0.4 0.4
0.8
0.5
(1) IN
(2) GND
(3) OUT
0.2
Each lead has same dimensions
Packaging specifications
Package
Packaging type
Code
Part No.
DTD713ZE
DTD713ZM
−
Basic ordering
unit (pieces)
EMT3
Taping
TL
3000
VMT3
Taping
T2L
8000
−
Abbreviated symbol : P21
Absolute maximum ratings
(Ta=25°C
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1
∗2
Inner circuit
Limits
Unit
R
1
OUT
Symbol
V
CC
V
IN
I
C (max)
P
D
Tj
Tstg
DTD713ZE DTD713ZM
30
−5
to
+10
200
150
150
−55
to
+150
V
V
IN
R
2
GND
mA
mW
C
C
IN
GND
OUT
∗1
Characteristics of built-in transistor.
∗2
Each terminal mounted on a recommended land.
R
1
=1.0kΩ / R
2
=10kΩ
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c
○
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.05 - Rev.B
DTD713ZE / DTD713ZM
Electrical characteristics
(Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
∗
Input resistance
Resistance ratio
∗
Characteristics of built-in transistor.
Data Sheet
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
f
T
R
1
R
2
/R
1
Min.
−
2.5
−
−
−
140
−
0.7
8.0
Typ.
−
−
70
−
−
−
260
1.0
10
Max.
0.3
−
300
6.4
0.5
−
−
1.3
12
Unit
V
mV
mA
µA
−
MHz
kΩ
−
Conditions
V
CC
= 5V, I
O
= 100µA
V
O
= 0.3V, I
O
= 20mA
I
O
/I
I
=50mA / 2.5mA
V
I
= 5V
V
CC
= 30V, V
I
=0V
V
O
= 2V, I
O
= 100mA
V
CE
= 10V, I
E
=
−5mA,
f=100MHz
−
−
Electrical characteristics curves
10
OUTPUT CURRENT : I
O
(mA)
INPUT VOLTAGE : V
I
(on) (V)
Ta=
－
40
℃
25
℃
85
℃
125
℃
1
100
V
CC
= 5V
10
1
Ta=125
℃
85
℃
25
℃
－
40
℃
0.1
0.1
V
0
= 0.3V
1
10
100
1000
0.1
0
0.5
1
1.5
2
INPUT VOLTAGE : V
I
(off) (V)
OUTPUT CURRENT : I
O
(mA)
1000
Ta=125
℃
85
℃
DC CURENT GAIN : G
I
100
25
℃
－
40
℃
V
O
= 2V
OUTPUT VOLTAGE : V
O
(on) (V)
1
I
O
/I
I
=20
Ta=125
℃
85
℃
0.1
25
℃
－
40
℃
10
1
0.1
1
10
100
OUTPUT CURENT : I
O
(mA)
1000
0.01
1
10
100
1000
OUOPUT CURRENT : I
O
(mA)
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c
○
2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.05 - Rev.B
Notice
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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use of such technical information.
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