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DUL1506S

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Gallium Arsenide, TO-276AB, SMD-3

器件类别：分立半导体    二极管   

厂商名称：Micross

厂商官网：https://www.micross.com

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
Micross
零件包装代码
TO-276AB
包装说明
SMD-3
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
LOW LEAKAGE CURRENT
应用
EFFICIENCY
外壳连接
ANODE
配置
SINGLE
二极管元件材料
GALLIUM ARSENIDE
二极管类型
RECTIFIER DIODE
JEDEC-95代码
TO-276AB
JESD-30 代码
R-XBCC-N3
最大非重复峰值正向电流
150 A
元件数量
1
相数
1
端子数量
3
最高工作温度
260 °C
最低工作温度
-65 °C
最大输出电流
15 A
封装主体材料
UNSPECIFIED
封装形状
RECTANGULAR
封装形式
CHIP CARRIER
认证状态
Not Qualified
最大重复峰值反向电压
600 V
最大反向恢复时间
0.075 µs
表面贴装
YES
端子形式
NO LEAD
端子位置
BOTTOM
文档预览
August 2009
DUL1506 – 600V, 15A
HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE
General Description
The DUL1506 is a GaAs P-I-N Rectifier. It uses a
patented liquid phase epitaxy (LPE) construction
to provide temperature performance above current
Silicon, Silicon Carbide and Gallium Nitride
products of a similar specification. The device is
able to function stably well above the maximum T
J
of more traditional diodes of this type while
maintaining parity of performance in terms of key
parameters such as recovery time and forward
voltage.
Preliminary
Features
High maximum junction temperature; up to
+260° vs. +175° for silicon diodes
C
C
Lower and
temperature independent
dynamic recovery characteristics over the
full specified temperature range
Lower leakage current at all operating
temperatures
Very low capacitance
Package Types
Applications
High temperature electronics
Power Modules
Hybrid circuits
TO-257
TO-276AB (SMD)
BARE DIE
Thermal Characteristics
SYMBOL
PARAMETER
PACKAGE
RATINGS
UNITS
R
θJC
MAXIMUM THERMAL RESISTANCE, JUNCTION TO CASE
TO-276Al
3.51
°
C/W
R
θJC
MAXIMUM THERMAL RESISTANCE, JUNCTION TO CASE
TO-257AlN
1.45
°
C/W
R
θJC
MAXIMUM THERMAL RESISTANCE, JUNCTION TO CASE
TO-276AB
1.24
°
C/W
TO-257Al / TO-257AlN
TO-276AB
BARE DIE (3.1mm²)
1
1
ORDERING
PART #
PACKAGE
TEMP RANGE
1 2 3
1.
2.
3.
2
3
1.
2.
CATHODE
ANODE
(DIE BACKSIDE)
DUL1506AL
DUL1506ALN
DUL1506S
DUL1506-AG
DUL1506-GG
TO-257Al
TO-257AlN
TO-276AB
BARE DIE
BARE DIE
-65 TO 260°
C
-65 TO 260°
C
-65 TO 260°
C
-65 TO 260°
C
-65 TO 260°
C
ANODE
COMMON CATHODE
COMMON CATHODE
1
2
3
CATHODE
ANODE
CATHODE
Europe:
sales@mintech.co.uk
USA :
ussales@mintech.co.uk
China:
chinasales@mintech.co.uk
Rev. 1.4 7
TH
August 2009
1
© Mintech Semiconductors Ltd
www.mintech.co.uk
Absolute Maximum Ratings
SYMBOL
PARAMETER
RATINGS
UNITS
V
RRM
PEAK REPETETIVE REVERSE VOLTAGE
600
V
V
RWM
V
R
I
F(AV)
I
FSM
T
J
,T
STG
WORKING PEAK REPETETIVE REVERSE VOLTAGE
600
V
DC BLOCKING VOLTAGE
600
V
AVERAGE RECTIFIED FORWARD CURRENT @ 260°
C
15
A
NON-REPETETIVE PEAK SURGE CURRENT
60Hz SINGLE HALF-SINE WAVE
OPERATING AND STORAGE TEMPERATURE RANGE
150
A
-65 to +260
°
C
Electrical Characteristics
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
V
FM
1
I
F
=15A
T
C
= 25°
C
T
C
= 175°
C
T
C
= 260°
C
T
C
= 25°
C
C
T
C
= 175°
T
C
= 260°
C
T
C
= 25°
C
T
C
= 175°
C
T
C
= 260°
C
-
-
-
1.55
1.45
1.42
1.60
1.50
1.45
V
I
RM
1
V
R
=600V
-
-
-
0.40
125
1000
1
130
1100
µA
t
RR
I
F
=1A, di/dt = 200 A/µs, V
R
=30V
-
-
-
30
30
30
40
40
40
ns
t
RR
I
RR
Q
RR
I
F
=15A, di/dt = 200 A/µs, V
R
=200V
T
C
= 25°
C
-
-
-
65
9
300
75
11
370
ns
A
nC
t
RR
I
RR
Q
RR
t
RR
I
RR
Q
RR
I
F
=15A, di/dt = 200 A/µA, V
R
=200V
T
C
= 175°
C
-
-
-
65
9
300
75
11
370
ns
A
nC
I
F
=15A, di/dt = 200 A/µA, V
R
=200V
T
C
= 260°
C
-
-
-
65
9
300
75
11
370
ns
A
nC
C
J
C,
T
J
= 25° f = 1MHz, V
R
= 200V
-
-
18
22
pF
W
AVL
AVALANCHE ENERGY ( L=2Mh )
-
10
-
-
mJ
Notes:
1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
Rev. 1.4 7
TH
August 2009
2
© Mintech Semiconductors Ltd
www.mintech.co.uk
Typical Performance Characteristics
Typical Forward Voltage Drop Versus Forward Current
260°
C
175°
C
Forward Current If (A)
260°
C
175°
C
25°
C
25°
C
Forward Voltage Vf (V)
25°
C
TBA – IRR
VS DI/DT
Rev. 1.4 7
TH
August 2009
3
© Mintech Semiconductors Ltd
www.mintech.co.uk
CURRENT DERATING, FREQUENCY
(Sinusoidal Wave)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
16
14
12
10
8
6
4
2
0
10,000
100,000
Duty cycle
T
δ=
t
p
/T t
p
δ=0.2
0.3
0.5
T
C
=200°
C
1,000,000
10,000,000
f, FREQUENCY (Hz)
I
F(AV)
, AVERAGE FORWARD CURRENT
(A)
CURRENT DERATING, FREQUENCY
(Rectangular Wave
δ
= 0.5)
18
16
14
12
10
8
6
4
2
0
10,000
T
C
=200°
C
dI
F
/dt T
dI
F
/dt =100 A/µs
300 A/µs
500 A/µs
δ=
t
p
/T t
p
100,000
1,000,000
f, FREQUENCY (Hz)
10,000,000
Rev. 1.4 7
TH
August 2009
4
© Mintech Semiconductors Ltd
www.mintech.co.uk
Mechanical Dimensions
TO-257
Note:
All dimensions in millimetres
Pins must not be bent less than
4.0mm from case
Finish – Electroless Ni 3-5 µm thick
TO-276AB(SMD)
Note:
All dimensions in millimeters [inches]
Rev. 1.4 7
TH
August 2009
5
© Mintech Semiconductors Ltd
www.mintech.co.uk
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参数对比
与DUL1506S相近的元器件有：DUL1506ALN、DUL1506AL、DUL1506-GG、DUL1506-AG。描述及对比如下：
型号 DUL1506S DUL1506ALN DUL1506AL DUL1506-GG DUL1506-AG
描述 Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Gallium Arsenide, TO-276AB, SMD-3 Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Gallium Arsenide, TO-257AA, TO-257ALN, 3 PIN Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Gallium Arsenide, TO-257AA, TO-257AL, 3 PIN Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Gallium Arsenide, 3.1 X 3.1 MM, DIE-2 Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Gallium Arsenide, 3.1 X 3.1 MM, DIE-2
零件包装代码 TO-276AB TO-257AA TO-257AA DIE DIE
包装说明 SMD-3 TO-257ALN, 3 PIN TO-257AL, 3 PIN 3.1 X 3.1 MM, DIE-2 3.1 X 3.1 MM, DIE-2
针数 3 3 3 2 2
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT
应用 EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 R-XBCC-N3 R-XSFM-P3 R-XSFM-P3 S-XUUC-N2 S-XUUC-N2
最大非重复峰值正向电流 150 A 150 A 150 A 150 A 150 A
元件数量 1 1 1 1 1
相数 1 1 1 1 1
端子数量 3 3 3 2 2
最高工作温度 260 °C 260 °C 260 °C 260 °C 260 °C
最低工作温度 -65 °C -65 °C -65 °C -65 °C -65 °C
最大输出电流 15 A 15 A 15 A 15 A 15 A
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR SQUARE SQUARE
封装形式 CHIP CARRIER FLANGE MOUNT FLANGE MOUNT UNCASED CHIP UNCASED CHIP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 600 V 600 V 600 V 600 V 600 V
最大反向恢复时间 0.075 µs 0.075 µs 0.075 µs 0.075 µs 0.075 µs
表面贴装 YES NO NO YES YES
端子形式 NO LEAD PIN/PEG PIN/PEG NO LEAD NO LEAD
端子位置 BOTTOM SINGLE SINGLE UPPER UPPER
厂商名称 Micross Micross Micross - -
JEDEC-95代码 TO-276AB TO-257AA TO-257AA - -
Base Number Matches - 1 1 1 1
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