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DZ23C3V0-G3-18

Zener Diodes 3.0Volt 0.3 Watt 5%

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Vishay(威世)
包装说明
R-PDSO-G3
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
12 weeks
Is Samacsys
N
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
ZENER DIODE
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
湿度敏感等级
1
元件数量
2
端子数量
3
最高工作温度
150 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性
UNIDIRECTIONAL
最大功率耗散
0.3 W
标称参考电压
3 V
表面贴装
YES
技术
ZENER
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
10
最大电压容差
5%
工作测试电流
5 mA
Base Number Matches
1
文档预览
DZ23-G Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes, Dual
FEATURES
3
• Dual silicon planar Zener diodes, common
cathode
• The Zener voltages are graded according to
the international E24 standard. Standard
Zener voltage tolerance is ± 5 %.
1
2
• The parameters are valid for both diodes in
one case.
V
Z
and
R
zj
of the two diodes in
one case is
5 %
• AEC-Q101 qualified
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
• Base P/N-G3 - green, commercial grade
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.7 to 51
5
Pulse current
Dual common cathode
UNIT
V
mA
ORDERING INFORMATION
DEVICE NAME
DZ23-G-Series
DZ23C2V7-G3-18 to DZ23C51-G3-18
10 000 (8 mm tape on 13" reel)
15 000
ORDERING CODE
DZ23C2V7-G3-08 to DZ23C51-G3-08
TAPED UNITS PER REEL
3000 (8 mm tape on 7" reel)
MINIMUM ORDER QUANTITY
10 000
PACKAGE
PACKAGE NAME
SOT-23
WEIGHT
8.1 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Thermal resistance,
junction to ambient air
Junction temperature
Storage temperature range
Operating temperature range
Zener current
TEST CONDITION
Device on fiberglass substrate,
see layout on page 6
Device on fiberglass substrate,
see layout on page 6
SYMBOL
P
tot
R
thJA
T
j
T
stg
T
op
I
Z
VALUE
300
420
150
- 65 to + 150
- 55 to + 150
P
tot
/V
Z
UNIT
mW
K/W
°C
°C
°C
mA
Rev. 1.1, 01-Mar-13
Document Number: 85879
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DZ23-G Series
www.vishay.com
Vishay Semiconductors
DYNAMIC
RESISTANCE
f = 1 kHz
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
MAX.
-
-
-
-
-
-
-
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
MAX.
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
VZ
at I
ZT1
10
-4
/°C
MIN.
MAX.
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
(1)
PART NUMBER
MARKING
CODE
MIN.
DZ23C2V7-G
DZ23C3V0-G
DZ23C3V3-G
DZ23C3V6-G
DZ23C3V9-G
DZ23C4V3-G
DZ23C4V7-G
DZ23C5V1-G
DZ23C5V6-G
DZ23C6V2-G
DZ23C6V8-G
DZ23C7V5-G
DZ23C8V2-G
DZ23C9V1-G
DZ23C10-G
DZ23C11-G
DZ23C12-G
DZ23C13-G
DZ23C15-G
DZ23C16-G
DZ23C18-G
DZ23C20-G
DZ23C22-G
DZ23C24-G
DZ23C27-G
DZ23C30-G
DZ23C33-G
DZ23C36-G
DZ23C39-G
DZ23C43-G
DZ23C47-G
DZ23C51-G
V41
V42
V43
V44
V45
V46
V47
V48
V49
V50
V51
V52
V53
V54
V55
V56
V57
V58
V59
V60
V61
V62
V63
V64
V65
V66
V67
V68
V69
V70
V71
V72
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
V
Z
at I
ZT1
V
NOM.
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
MAX.
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
TEST
CURRENT
I
ZT1
mA
I
ZT2
REVERSE
VOLTAGE
V
R
at I
R
V
MAX.
-
-
-
-
-
-
-
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
nA
Note
(1)
Tested with pulses t = 5 ms
p
Rev. 1.1, 01-Mar-13
Document Number: 85879
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DZ23-G Series
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
mA
10
3
10
2
Ω
100
T
J
= 25 °C
5
4
I
F
10
1
10
-1
10
-2
10
-3
10
-4
10
-5
0
18114
T
J
= 100 °C
r
zj
3
2
33
27
22
18
15
12
10
6.8/8.2
6.2
T
J
= 25 °C
10
5
4
3
2
1
0.2
0.4
0.6
0.8
1V
0.1
18119
2
5
1
2
5
V
F
10
I
Z
2
5
100 mA
Fig. 1 -
Forward Characteristics
Fig. 4 -
Dynamic Resistance vs. Zener Current
mW
500
Ω
10
3
7
T
j
= 25 °C
400
5
4
P
tot
300
200
R
zj
3
2
47 + 51
43
39
36
10
2
7
5
4
3
2
100
0
0
18115
100
200 °C
10
0.1
18120
2
3
4 5
1
2
3 4 5
T
amb
I
Z
10
mA
Fig. 2 -
Admissible Power Dissipation vs.
Ambient Temperature
Fig. 5 -
Dynamic Resistance vs. Zener Current
Ω
1000
5
4
3
2
Ω
10
3
T
J
= 25 °C
5
4
3
2
R
zth
= R
thA
x
V
Z
x
Δ
V
Z
Δ
T
j
r
zj
R
zth
10
2
100
5
4
3
2
5
4
3
2
10
5
4
3
2
2.7
3.6
4.7
5.1
5.6
10
5
4
3
2
negative
positive
1
0.1
18117
2
5
1
1
18121
2
3
4 5
1
2
5
10
I
Z
2
5
100 mA
10
2
3 4 5
100
V
V
Z
at I
Z
= 5 mA
Fig. 3 -
Dynamic Resistance vs. Zener Current
Fig. 6 -
Thermal Differential Resistance vs. Zener Voltage
Rev. 1.1, 01-Mar-13
Document Number: 85879
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DZ23-G Series
www.vishay.com
Vishay Semiconductors
Ω
100
7
5
4
mV/°C
100
I
Z
= 5 mA
R
zj
3
2
Δ
V
Z
Δ
T
j
80
60
10
7
5
4
3
2
40
20
T
j
= 25 °C
I
Z
= 5 mA
1
2
3
4 5
1
10
2
3 4 5
100
V
0
0
18125
20
40
60
80
100
V
18122
V
Z
V
Z
Fig. 7 -
Dynamic Resistance vs. Zener Voltage
Fig. 10 -
Temperature Dependence of Zener Voltage vs.
Zener Voltage
mV/°C
25
20
15
10
5
0
-5
1
18123
2
3
4 5
V
9
8
5 mA
I
Z
= 1 mA
20 mA
7
Δ
V
Z
Δ
T
j
Δ
V
Z
6
5
4
3
2
1
0
51
43
36
10
2
3 4 5
100
V
-1
0
18126
I
Z
= 2 mA
20
40
60
80 100 120
T
j
140 °C
V
Z
Fig. 8 -
Temperature Dependence of Zener Voltage vs.
Zener Voltage
Fig. 11 -
Change of Zener Voltage vs. Junction Temperature
V
0.8
0.7
0.6
V
Z
at I
Z
= 5 mA
25
15
10
V
1.6
1.4
1.2
Δ
V
Z
= R
zth
x I
Z
Δ
V
Z
0.5
0.4
0.3
0.2
0.1
0
-1
- 0.2
0
18124
3.6
4.7
8
7
6.2
5.9
5.6
5.1
Δ
V
Z
1
0.8
0.6
0.4
0.2
0
- 0.2
- 0.4
20
40
60
80
100 120 140 C
18127
1
2
3
4 5
10
2
3 4 5
100
V
T
j
V
Z
at I
Z
= 5 mA
Fig. 9 -
Change of Zener Voltage vs. Junction Temperature
Fig. 12 -
Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener voltage
Rev. 1.1, 01-Mar-13
Document Number: 85879
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DZ23-G Series
www.vishay.com
Vishay Semiconductors
V
5
mA
30
Δ
V
Z
= R
zth
x I
Z
l
Z
10
12
T
j
= 25 °C
4
Δ
V
Z
3
I
Z
= 5 mA
20
15
18
22
2
1
Test
10 current
I
Z
5 mA
27
33 36
I
Z
= 2 mA
0
0
18112
0
0
18128
20
40
60
80
100
V
10
20
V
Z
30
40
V
V
Z
Fig. 13 -
Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener voltage
Fig. 15 -
Breakdown Characteristics
mA
50
T
j
= 25 °C
mA
10
2.7
3.9 5.6
3.3 4.7
6.8
8.2
8
l
Z
6
Test
current
I
Z
5 mA
39
43
51
47
T
j
= 25 °C
40
l
Z
30
20
Test
current
I
Z
5 mA
4
10
0
0
18111
2
0
1
2
3
4
5
6
V
Z
7
8
9 10
V
18113
0
10 20 30 40 50 60 70 80 90 100
V
V
Z
Fig. 14 -
Breakdown Characteristics
Fig. 16 -
Breakdown Characteristics
LAYOUT FOR R
thJA
TEST
Thickness: fiberglass 0.059" (1.5 mm)
Copper leads 0.012" (0.3 mm)
7.5 (0.3)
3 (0.12)
1 (0.4)
12 (0.47)
15 (0.59)
0.8 (0.03)
2 (0.8)
1 (0.4)
2 (0.8)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Rev. 1.1, 01-Mar-13
Document Number: 85879
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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