This product complies with the RoHS Directive (EU 2002/95/EC).
DZ2J110
Silicon epitaxial planar type
For constant voltage / waveform clipper and surge absorption circuit
Low noise type
Features
Excellent rising characteristics of zener current I
z
Low zener operating resistance R
Z
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
SMini2-F5-B
Name
Pin
1. Cathode
2. Anode
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: PJ, PU
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Repetitive peak forward current
Total power dissipation
*
Junction temperature
Storage temperature
Symbol
I
FRM
P
T
T
j
T
stg
Rating
200
200
150
–55 to +150
Unit
mA
mW
°C
°C
Note) *: P
T
= 200 mW achieved with a printed circuit board.
Common Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Zener voltage
*1, 2, 4
Zener operating resistance
Zener rise operating resistance
Reverse current
Temperature coefficient of zener voltage
*3
Symbol
V
F
V
Z
R
Z
R
ZK
I
R
S
Z
I
F
= 10 mA
I
Z
= 5 mA
I
Z
= 5 mA
I
Z
= 0.5 mA
V
R
= 8 V
I
Z
= 5 mA
8.3
10.45
Conditions
Min
Typ
Max
1.0
11.55
30
60
0.05
Unit
V
V
W
W
mA
mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1: The temperature must be controlled 25°C for V
Z
measurement. V
Z
value measured at other temperature must be adjusted to V
Z
(25°C)
*2 : V
Z
guaranteed 20 ms after current
flow.
*3 : T
j
= 25°C to 150°C
*4 : Rank classification
Code
Rank
V
Z
Marking Symbol
M
M
10.73 to 11.28
PU
0
No-rank
10.45 to 11.55
PJ
Publication date: February 2011
Ver. DED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DZ2J110
DZ2J110_IF-VF
I
F
V
F
DZ2J110_IZ-VZ
DZ2J110_IR-VR
I
Z
V
Z
I
R
V
R
T
a
= 25°C
10
−5
10
3
10
2
T
a
=
25°C
10
2
T
a
= 25°C
Forward current I
F
(mA)
10
1
10
−1
10
−2
10
−3
10
Reverse current I
R
(mA)
Zener current I
Z
(mA)
10
−7
1
10
−9
0
Forward voltage V
F
(V)
DZ2J110_RZ-IZ
0.4
0.8
1.2
10
−1
0
Zener voltage V
Z
(V)
DZ2J110_SZ-IZ
5
10
15
20
25
10
−11
0
Reverse voltage V
R
(V)
DZ2J110_Ct-VR
2
4
6
8
R
Z
I
Z
S
Z
I
Z
C
t
V
R
T
a
= 25°C
Temparature coefficient of zener voltage S
Z
(mV/°C)
10
2
10
20
T
a
= 25°C
Zener operating resistance R
Z
(Ω)
Terminal capacitance C
t
(pF)
0
2
4
6
8
10
8
15
6
10
10
4
2
5
1
10
−1
1
10
10
2
0
0
Zener current I
Z
(mA)
Zener current I
Z
(mA)
0
Reverse voltage V
R
(V)
2
4
6
8
2
Ver. DED
This product complies with the RoHS Directive (EU 2002/95/EC).
DZ2J110
SMini2-F5-B
Unit: mm
1.25
±0.10
0.35
±0.05
2
0.13
−0.02
+0.05
0 to 0.05
1
0.50
±0.05
0.4
±0.1
5°
0.7
±0.1
5
°
(0.15)
1.7
±0.1
2.5
±0.2
Ver. DED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
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equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
–
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life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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