Doc No.
TT4-EA-11553
Revision.
3
Product Standards
Zener Diode
DZ2J1100L
DZ2J1100L
Silicon epitaxial planar type
Unit: mm
For constant voltage / For surge absorption circuit
Features
Excellent rising characteristics of zener current Iz
Low zener operating resistance Rz
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1.25
0.35
2
0.13
Marking Symbol: PJ or PU
0.5
1
1.7
2.5
0.7
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Cathode
2. Anode
Panasonic
JEITA
Code
SMini2-F5-B
SC-90A
―
Absolute Maximum Ratings Ta = 25
C
Parameter
Symbol
Repetitive peak forward current
Total power dissipation
*1
Electrostatic discharge
*2
Junction temperature
Operating ambient temperature
Storage temperature
Note)
Rating
200
200
8
150
-40 to +85
-55 to +150
Unit
mA
mW
kV
C
C
C
IFRM
PT
ESD
Tj
Topr
Tstg
Internal Connection
2
*1 Mounted on glass epoxy print board ( 45 mm
45 mm
1 mm )
Solder in ( Recommended land pattern )
*2 Test method : IEC61000_4_2
( C = 150 pF, R = 330
,
Contact discharge : 10 times )
1
Electrical Characteristics Ta = 25
C
3
C
Parameter
Symbol
Forward voltage
Zener voltage
*1, *2
Zener operating resistance
Zener rise operating resistance
Reverse current
Temperature coefficient of zener voltage
Note)
Conditions
IF = 10 mA
IZ = 5 mA
IZ = 5 mA
IZ = 0.5 mA
VR = 8 V
IZ = 5 mA
Min
10.45
Typ
Max
1.0
11.55
Unit
V
V
A
mV/C
*3
VF
VZ
RZ
RZK
IR
SZ
30
60
0.05
8.3
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1 The temperature must be controlled 25
C
for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25
C).
*2 VZ guaranted 20 ms after current flow
Rank classification
*3 Tj = 25
C
to 150
C
Code
M
0
M
No-rank
10.73
to
11.28 10.45
to
11.55
Marking symbol
PU
PJ
Page 1 of 4
Rank
VZ
Established : 2009-10-14
Revised
: 2013-07-11
Doc No.
TT4-EA-11553
Revision.
3
Product Standards
Zener Diode
DZ2J1100L
Technical Data ( reference )
PT - Ta
Total power dissipation PT (mW)
IF - VF
1.E+00
Forward current IF (A)
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
0.0
Ta = 25 °C
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160 180 200
Ambient temperature Ta (°C)
Mounted on glass epoxy print board.
Board size : 45 mm × 45 mm x 1 mm
Solder in : land pattern
0.2
0.4
0.6
0.8
1.0
1.2
Forward voltage VF (V)
IZ - VZ
1.E-01
Reverse current IR (A)
1.E-06
Ta = 25 °C
IR - VR
1.E-07
1.E-08
1.E-09
1.E-10
1.E-11
1.E-12
Zener current IZ (A)
1.E-02
Ta = 125 °C
1.E-03
1.E-04
1.E-05
1.E-06
0
25 °C
-40 °C
85 °C
5
10
15
20
25
0
1
2
3
4
5
6
7
8
Zener voltage VZ (V)
Reverse voltage VR (V)
RZ - IZ
100
Zener operating resistance RZ
)
Temparature coefficient of zener
voltage SZ (mV/°C)
SZ - IZ
12
Ta = 25 °C
10
8
6
4
2
0
10
1
0.0001
0.001
0.01
0.1
0
2
4
6
8
10
Zener current IZ (A)
Zener current IZ (mA)
Page 2 of 4
Established : 2009-10-14
Revised
: 2013-07-11
Doc No.
TT4-EA-11553
Revision.
3
Product Standards
Zener Diode
DZ2J1100L
Technical Data ( reference )
Ct - VR
20
18
16
14
12
10
8
6
4
2
0
0
2
Rth - t
1000
Thermal resistance Rth (°C/W)
Terminal capacitance Ct (pF)
Ta = 25 °C
f = 1 MHz
(1)
Rth(j-l) = 80 °C/W
(2)
100
10
(1) Non-heat sink
(2) Mounted on glass epoxy print board.
Board size : 45 mm × 45 mm x 1 mm
Solder in : land pattern
4
6
Reverse voltage VR (V)
8
1
0.001
0.01
0.1
1
10
Time t (s)
100
1000
PZSM - tw
100
Non-repetitive reverse surge power
dissipation PZSM (W)
Ta = 25 °C
10
1
0.1
100
1000
Pulse width tw (μs)
10000
Page 3 of 4
Established : 2009-10-14
Revised
: 2013-07-11
Doc No.
TT4-EA-11553
Revision.
3
Product Standards
Zener Diode
DZ2J1100L
SMini2-F5-B
1.25
±0.10
0.35
±0.05
2
Unit: mm
0.13
-0.02
+0.05
1.7
±0.1
2.5
±0.2
1
0.50
±0.05
0.4
±0.1
(5°)
0 to 0.05
(5°)
0.7
±0.1
Land Pattern (Reference) (Unit: mm)
0.9
0.9
2.4
1.1
Page 4 of 4
Established : 2009-10-14
Revised
: 2013-07-11
0.9
(0.15)
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semiconductors described in this book
(1)
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Consult our sales staff in advance for information on the following applications:
–
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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