Technical Data Sheet
Opto Interrupter
EAITRDA8
Features
․Fast
response time
․High
analytic
․High
sensitivity
․Cut-off
visible wavelength λP=940nm
․Pb
Free
․This
product itself will remain within RoHS compliant version.
Description
The
EAITRDA8
consist of an infrared emitting diode and an NPN silicon phototransistor,
encased side-by-side on converging optical axis in a black thermoplastic housing,
The phototransistor receives radiation from the IR only .This is the normal situation.
But when an object is in between , phototransistor could not receives the radiation.
For additional component information , please refer to IR and PT
Applications
․Mouse
Copier
․Switch
Scanner
․Floppy
disk driver
․Non-contact
Switching
․For
Direct Board
1
Copyright © 2010, Everlight Americas Inc. Release Date : 10.18.2013. Issue No:DIR-000xxx
www.everlightamericas.com
DATASHEET
EAITRDA8
Device Selection Guide
Device No.
IR
PT
Chip Material
GaAlAs
Silicon
LENS COLOR
Blue
Black
Absolute Maximum Ratings (Ta=25℃)
Parameter
Power Dissipation at(or below) 25℃Free
Air Temperature
Input
Reverse Voltage
Forward Current
Peak Forward Current (*1) Pulse width
≦100μs,
Duty cycle=1%
Collector Power Dissipation
Output
Collector Current
Collector-Emitter Voltage
Emitter-Collector Voltage
Operating Temperature
Storage Temperature
Lead Soldering Temperature (*2) (1/16 inch form
body for 5 seconds)
Notes:
(*1)
tw=100 μsec. ,
T=10 msec.
(*2)
t=5 Sec
Symbol
Pd
V
R
I
F
I
FP
P
d
I
C
B V
CEO
B V
ECO
Topr
Tstg
Tsol
Ratings
100
5
50
1
100
50
30
5
-25~+85
-40~+85
260
Unit
mW
V
mA
A
mW
mA
V
V
℃
℃
℃
2
Copyright © 2010, Everlight Americas Inc. Release Date : 10.18.2013. Issue No:DIR-000xxx
www.everlightamericas.com
DATASHEET
EAITRDA8
Electro-Optical Characteristics (Ta=25℃)
Parameter
Forward Voltage
Input
Reverse Current
Peak Wavelength
Dark Current
Output
C-E Saturation
Voltage
Collector Current
Rise Time
Fall Time
Symbol
V
F1
V
F2
V
F3
I
R
λ
P
I
CEO
V
CE(sat)
I
C(ON)
t
R
t
F
Min.
-
-
-
-
-
-
-
200
-
-
Typ.
1.2
1.4
2.6
-
940
-
-
-
15
15
Max.
1.5
1.85
4.0
10
-
100
0.4
-
-
-
Unit
V
μA
nm
nA
V
μA
μs
μs
V
CE
=5V, I
C
=1mA, R
L
=1K
Condition
I
F
=20mA
I
F
=100mA,tp=100μ s,tp/T=0.01
I
F
=1A,tp=100μ s,tp/T=0.01
V
R
=5V
I
F
=20mA
V
CE
=20V,Ee=0mW/cm
2
I
C
=2mA,Ee=1mW/cm
V
CE
=5V,I
F
=20mA
Response
Time
3
Copyright © 2010, Everlight Americas Inc. Release Date : 10.18.2013. Issue No:DIR-000xxx
www.everlightamericas.com
DATASHEET
EAITRDA8
Typical Electrical/Optical/Characteristics Curves for IR
Collector Power Dissipation vs Ambient Temperature
Spectral Distribution
Relative Radiant Intensity vs Forward Current
Relative Radiant Intensity vs Angular Displacement
4
Copyright © 2010, Everlight Americas Inc. Release Date : 10.18.2013. Issue No:DIR-000xxx
www.everlightamericas.com
DATASHEET
EAITRDA8
Typical Electro/Optical/Characteristics Curves for PT
Collector Power Dissipation vs. Ambient Temperature
Spectral Sensitivity
Relative collector current vs. Ambient Temperature
Collector Current vs. Irradiance
5
Copyright © 2010, Everlight Americas Inc. Release Date : 10.18.2013. Issue No:DIR-000xxx
www.everlightamericas.com
