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EB52W4E50N-40.000M

TCXO, CLOCK, LVCMOS OUTPUT

器件类别:无源元件    振荡器   

厂商名称:ECLIPTEK

厂商官网:http://www.ecliptek.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
ECLIPTEK
Reach Compliance Code
unknown
其他特性
TR, 14 INCH
老化
1 PPM/YEAR
最长下降时间
10 ns
频率调整-机械
YES
频率稳定性
5%
JESD-609代码
e4
制造商序列号
EB52W4
安装特点
SURFACE MOUNT
标称工作频率
40 MHz
最高工作温度
85 °C
最低工作温度
-40 °C
振荡器类型
LVCMOS
输出负载
15 pF
物理尺寸
18.3mm x 11.7mm x 4.5mm
最长上升时间
10 ns
最大供电电压
3.465 V
最小供电电压
3.135 V
标称供电电压
3.3 V
表面贴装
YES
最大对称度
60/40 %
端子面层
Nickel/Gold (Ni/Au)
文档预览
EB52W4E50N-40.000M
EB52W4 E 50 N -40.000M
Series
3.3Vdc LVCMOS PCB SMD TCXO
Operating Temperature Range
-40°C to +85°C
Frequency Stability
±5.0ppm Maximum
Nominal Frequency
40.000MHz
Control Voltage
None (No Connect on Pin 1)
ELECTRICAL SPECIFICATIONS
Nominal Frequency
Frequency Stability
Frequency Stability vs. Input Voltage
Aging at 25°C
Frequency Stability vs. Load
Operating Temperature Range
Supply Voltage
Input Current
Output Voltage Logic High (Voh)
Output Voltage Logic Low (Vol)
Rise/Fall Time
Duty Cycle
Load Drive Capability
Output Logic Type
Control Voltage
Internal Trim
Modulation Bandwidth
Input Impedance
Phase Noise
Storage Temperature Range
40.000MHz
±5.0ppm Maximum (Inclusive of Operating Temperature Range)
±0.3ppm Maximum (±5%)
±1ppm/Year Maximum
±0.2ppm Maximum (±2pF)
-40°C to +85°C
3.3Vdc ±5%
35mA Maximum
90% of Vdd Minimum
10% of Vdd Maximum
10nSec Maximum (Measured at 20% to 80% of waveform)
50% ±10% (Measured at 50% of waveform)
15pF Maximum
CMOS
None (No Connect on Pin 1)
±3ppm Minimum (Top of Can)
10kHz Minimum (Measured at -3dB with a Control Voltage of 1.65Vdc)
10kOhms Typical
-70dBc at 10Hz Offset, -100dBc at 100Hz Offset, -130dBc at 1kHz Offset, -140dBc at 10kHz Offset, -
145dBc at 100kHz Offset (Typical Values Fo=19.200MHz at 25°C at Nominal Vdd and Vc)
-40°C to +85°C
ENVIRONMENTAL & MECHANICAL SPECIFICATIONS
Fine Leak Test
Gross Leak Test
Lead Integrity
Mechanical Shock
Resistance to Soldering Heat
Resistance to Solvents
Solderability
Temperature Cycling
Vibration
MIL-STD-883, Method 1014 Condition A (Internal Crystal Only)
MIL-STD-883, Method 1014 Condition C (Internal Crystal Only)
MIL-STD-883, Method 2004
MIL-STD-202, Method 213 Condition C
MIL-STD-202, Method 210
MIL-STD-202, Method 215
MIL-STD-883, Method 2003
MIL-STD-883, Method 1010
MIL-STD-883, Method 2007 Condition A
www.ecliptek.com | Specification Subject to Change Without Notice | Rev A 2/16/2010 | Page 1 of 4
EB52W4E50N-40.000M
MECHANICAL DIMENSIONS (all dimensions in millimeters)
PIN
1
2
3
4
CONNECTION
No Connect
Ground
Output
Supply Voltage
1.5
±0.3
DIA 3.5 ±0.5
4.5
±0.3
4.0 ±0.3
1.7
±0.4
4
7.62
±0.30
3
11.7
±0.5
4.0 ±0.3
2
1.0
±0.1
18.3 ±0.5
21.3 ±0.5
LINE MARKING
1
2
3
ECLIPTEK
40.000M
M=MHz
XXYZZ
XX=Ecliptek Manufacturing
Code
Y=Last Digit of the Year
ZZ=Week of the Year
1
Suggested Solder Pad Layout
All Dimensions in Millimeters
1.6 (X4)
3.5 (X4)
14.8
Solder Land
(X4)
5.9
All Tolerances are ±0.1
OUTPUT WAVEFORM
CLOCK OUTPUT
V
OH
80% of Waveform
50% of Waveform
20% of Waveform
V
OL
Fall
Time
Rise
Time
T
W
T
Duty Cycle (%) = T
W
/T x 100
www.ecliptek.com | Specification Subject to Change Without Notice | Rev A 2/16/2010 | Page 2 of 4
EB52W4E50N-40.000M
Test Circuit for CMOS Output
Oscilloscope
Frequency
Counter
+
+
Power
Supply
_
+
Voltage
Meter
_
Current
Meter
_
Supply
Voltage
(V
DD
)
Probe
(Note 2)
Output
0.01µF
(Note 1)
0.1µF
(Note 1)
Ground
C
L
(Note 3)
No Connect
or Tri-State
Note 1: An external 0.1µF low frequency tantalum bypass capacitor in parallel with a 0.01µF high frequency
ceramic bypass capacitor close to the package ground and V
DD
pin is required.
Note 2: A low capacitance (<12pF), 10X attenuation factor, high impedance (>10Mohms), and high bandwidth
(>300MHz) passive probe is recommended.
Note 3: Capacitance value C
L
includes sum of all probe and fixture capacitance.
www.ecliptek.com | Specification Subject to Change Without Notice | Rev A 2/16/2010 | Page 3 of 4
EB52W4E50N-40.000M
Recommended Solder Reflow Methods
T
P
Critical Zone
T
L
to T
P
Ramp-up
Ramp-down
Temperature (T)
T
L
T
S
Max
T
S
Min
t
S
Preheat
t 25°C to Peak
t
L
t
P
Time (t)
Low Temperature Infrared/Convection 240°C
T
S
MAX to T
L
(Ramp-up Rate)
Preheat
- Temperature Minimum (T
S
MIN)
- Temperature Typical (T
S
TYP)
- Temperature Maximum (T
S
MAX)
- Time (t
S
MIN)
Ramp-up Rate (T
L
to T
P
)
Time Maintained Above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Target Peak Temperature (T
P
Target)
Time within 5°C of actual peak (t
p
)
Ramp-down Rate
Time 25°C to Peak Temperature (t)
Moisture Sensitivity Level
5°C/second Maximum
N/A
150°C
N/A
60 - 120 Seconds
5°C/second Maximum
150°C
200 Seconds Maximum
240°C Maximum
240°C Maximum 1 Time / 230°C Maximum 2 Times
10 seconds Maximum 2 Times / 80 seconds Maximum 1 Time
5°C/second Maximum
N/A
Level 1
Low Temperature Manual Soldering
185°C Maximum for 10 seconds Maximum, 2 times Maximum.
High Temperature Manual Soldering
260°C Maximum for 5 seconds Maximum, 2 times Maximum.
www.ecliptek.com | Specification Subject to Change Without Notice | Rev A 2/16/2010 | Page 4 of 4
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参数对比
与EB52W4E50N-40.000M相近的元器件有:EB52W4E50N-40.000M TR。描述及对比如下:
型号 EB52W4E50N-40.000M EB52W4E50N-40.000M TR
描述 TCXO, CLOCK, LVCMOS OUTPUT OSCILLATORS 5.0PPM -40+85 3.3V 4 40.000MHZ CMOS 18.3X21.3MM PCB SMD
是否Rohs认证 不符合 不符合
Reach Compliance Code unknown unknown
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