参数对比
与EBE11FD8AGFN-6E-E相近的元器件有:EBE11FD8AGFN-5C-E、EBE11FD8AGFN、EBE11FD8AGFD、EBE11FD8AGFD-6E-E。描述及对比如下:
型号 |
EBE11FD8AGFN-6E-E |
EBE11FD8AGFN-5C-E |
EBE11FD8AGFN |
EBE11FD8AGFD |
EBE11FD8AGFD-6E-E |
描述 |
1GB Fully Buffered DIMM |
1GB Fully Buffered DIMM |
1GB Fully Buffered DIMM |
1GB Fully Buffered DIMM |
1GB Fully Buffered DIMM |
厂商名称 |
ELPIDA |
ELPIDA |
- |
- |
ELPIDA |
零件包装代码 |
DIMM |
DIMM |
- |
- |
DIMM |
包装说明 |
DIMM, |
DIMM, |
- |
- |
DIMM, |
针数 |
240 |
240 |
- |
- |
240 |
Reach Compliance Code |
unknow |
unknown |
- |
- |
unknown |
ECCN代码 |
EAR99 |
EAR99 |
- |
- |
EAR99 |
访问模式 |
DUAL BANK PAGE BURST |
DUAL BANK PAGE BURST |
- |
- |
DUAL BANK PAGE BURST |
其他特性 |
AUTO/SELF REFRESH |
AUTO/SELF REFRESH |
- |
- |
AUTO/SELF REFRESH |
JESD-30 代码 |
R-XDMA-N240 |
R-XDMA-N240 |
- |
- |
R-XDMA-N240 |
内存密度 |
9663676416 bi |
9663676416 bit |
- |
- |
9663676416 bit |
内存集成电路类型 |
DDR DRAM MODULE |
DDR DRAM MODULE |
- |
- |
DDR DRAM MODULE |
内存宽度 |
72 |
72 |
- |
- |
72 |
功能数量 |
1 |
1 |
- |
- |
1 |
端口数量 |
1 |
1 |
- |
- |
1 |
端子数量 |
240 |
240 |
- |
- |
240 |
字数 |
134217728 words |
134217728 words |
- |
- |
134217728 words |
字数代码 |
128000000 |
128000000 |
- |
- |
128000000 |
工作模式 |
SYNCHRONOUS |
SYNCHRONOUS |
- |
- |
SYNCHRONOUS |
最高工作温度 |
85 °C |
85 °C |
- |
- |
85 °C |
组织 |
128MX72 |
128MX72 |
- |
- |
128MX72 |
封装主体材料 |
UNSPECIFIED |
UNSPECIFIED |
- |
- |
UNSPECIFIED |
封装代码 |
DIMM |
DIMM |
- |
- |
DIMM |
封装形状 |
RECTANGULAR |
RECTANGULAR |
- |
- |
RECTANGULAR |
封装形式 |
MICROELECTRONIC ASSEMBLY |
MICROELECTRONIC ASSEMBLY |
- |
- |
MICROELECTRONIC ASSEMBLY |
认证状态 |
Not Qualified |
Not Qualified |
- |
- |
Not Qualified |
自我刷新 |
YES |
YES |
- |
- |
YES |
最大供电电压 (Vsup) |
1.9 V |
1.9 V |
- |
- |
1.9 V |
最小供电电压 (Vsup) |
1.7 V |
1.7 V |
- |
- |
1.7 V |
标称供电电压 (Vsup) |
1.8 V |
1.8 V |
- |
- |
1.8 V |
表面贴装 |
NO |
NO |
- |
- |
NO |
技术 |
CMOS |
CMOS |
- |
- |
CMOS |
温度等级 |
OTHER |
OTHER |
- |
- |
OTHER |
端子形式 |
NO LEAD |
NO LEAD |
- |
- |
NO LEAD |
端子位置 |
DUAL |
DUAL |
- |
- |
DUAL |