Ordering number : ENA1418B
ECH8309
P-Channel Power MOSFET
–12V, –9.5A, 16m
Ω
, Single ECH8
Features
•
•
•
http://onsemi.com
1.8V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
2
×0.8mm)
Conditions
Ratings
--12
±10
--9.5
--40
1.5
150
-
-55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-002
Top View
0.25
2.9
0.15
8
5
0 to 0.02
2.8
2.3
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
ECH8309-TL-H
Packing Type : TL
Marking
JL
TL
Lot No.
0.25
1
0.65
4
0.3
Electrical Connection
8
7
6
5
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
1
Bottom View
2
3
4
0.07
0.9
ECH8
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM/22509PE MSIM TC-00001633 No. A1418-1/7
ECH8309
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=--9.5A, VGS=0V
VDS=--6V, VGS=--4.5V, ID=--9.5A
See specified Test Circuit.
VDS=--6V, f=1MHz
Conditions
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
VGS=±8V, VDS=0V
VDS=--6V, ID=--1mA
VDS=--6V, ID=--4.5A
ID=--4.5A, VGS=--4.5V
ID=--2A, VGS=--2.5V
ID=--1A, VGS=--1.8V
Ratings
min
--12
--10
±10
--0.4
9.6
16
12
18
30
1780
540
390
22
110
157
123
18
2.8
4.9
-
-0.8
-
-1.2
16
26
53
-
-1.3
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
VDD= --6V
0V
--4.5V
VIN
PW=10μs
D.C.≤1%
G
D
ID= --4.5A
RL=1.3Ω
VOUT
P.G
ECH8309
50Ω
S
Ordering Information
Device
ECH8309-TL-H
Package
ECH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1418-2/7
ECH8309
--8.0V
--6.0V
--7
--6
ID -- VDS
--4.5
--2.5
V
V
--10
--9
--8
ID -- VGS
VDS= --6V
--1.8
V
Drain Current, ID -- A
--5
--4
--3
--2
--1
Drain Current, ID -- A
--7
--6
--5
--3
--2
Ta=7
5
°
C
0
--0.5
--1.5V
--4
VGS= --1.2V
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
--1
0
25
°
C
--25
°
C
--1.0
--1.5
--2.0
--2.5
IT13986
Drain-to-Source Voltage, VDS -- V
50
RDS(on) -- VGS
IT13985
45
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
40
35
30
25
20
15
10
5
0
0
--1
--2
--3
--4
--5
--6
--7
--8
ID=
--1.0A
--2.0A
--4.5A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
45
40
35
30
25
20
15
10
5
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
0A
= --1.
8V, I D
= --1.
V GS
0A
= --2.
V, I D
5
= --2.
V GS
A
= --4.5
4.5V, I D
--
V GS=
Gate-to-Source Voltage, VGS -- V
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
--0.01
|
y
fs
|
-- ID
C
IT14418
2
--10
7
5
Ambient Temperature, Ta --
°
C
IS -- VSD
IT14419
Forward Transfer Admittance,
|
y
fs
|
-- S
VDS= --6V
25
°
5
°
C
--2
=
Ta
C
75
°
VGS=0V
Source Current, IS -- A
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
2
1000
SW Time -- ID
5 7 --10
IT13989
--0.01
0
--0.2
--0.4
Ta=
7
5
°
C
25
°
C
--25
°
C
--0.6
--0.8
--1.0
--1.2
IT13990
5
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
VDD= --6V
VGS= --4.5V
Ciss, Coss, Crss -- pF
f=1MHz
3
2
Switching Time, SW Time -- ns
7
5
3
2
100
7
5
3
2
10
--0.01
Ciss
td(off)
tf
1000
7
5
3
2
Coss
Crss
tr
td(on)
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
100
0
--2
--4
--6
--8
--10
--12
IT13992
Drain Current, ID -- A
IT13991
Drain-to-Source Voltage, VDS -- V
No. A1418-3/7
ECH8309
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
2
4
6
8
10
12
14
16
18
VGS -- Qg
VDS= --6V
ID= --9.5A
Gate-to-Source Voltage, VGS -- V
--100
7
5
3
2
ASO
IDP= --40A
PW≤10μs
1m
s
10
ms
Drain Current, ID -- A
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
ID= --9.5A
DC
10
op
era
tio
n
0m
s
(T
a=
Operation in this area
is limited by RDS(on).
25
°
C
)
--0.01
--0.01
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm
2
×0.8mm)
2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
5 7 --10
2
3
Total Gate Charge, Qg -- nC
1.8
PD -- Ta
IT14420
Drain-to-Source Voltage, VDS -- V
IT14421
Allowable Power Dissipation, PD -- W
1.6
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
When mounted on ceramic substrate
(900mm
2
×0.8mm)
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT14422
No. A1418-4/7
ECH8309
Embossed Taping Specification
ECH8309-TL-H
No. A1418-5/7
FPGA/CPLD
