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ECLAMP0501T.TCT

Low Profile EClamp垄莽1-Line ESD protection

器件类别:分立半导体    二极管   

厂商名称:SEMTECH

厂商官网:http://www.semtech.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
SEMTECH
包装说明
R-PBCC-N3
Reach Compliance Code
compli
ECCN代码
EAR99
最大击穿电压
10 V
最小击穿电压
6 V
击穿电压标称值
8 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
R-PBCC-N3
JESD-609代码
e4
湿度敏感等级
1
最大非重复峰值反向功率耗散
25 W
元件数量
1
端子数量
3
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
CHIP CARRIER
极性
UNIDIRECTIONAL
参考标准
IEC-61000-4-2, 4-4
最大重复峰值反向电压
5 V
表面贴装
YES
技术
AVALANCHE
端子面层
Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式
NO LEAD
端子位置
BOTTOM
文档预览
Low Profile EClamp
®
1-Line ESD protection
PROTECTION PRODUCTS - EMIClamp
®
Description
The EClamp
®
0501T TVS diode is designed to protect sen-
sitive electronics from damage or latch-up due to ESD.
This state-of-the-art device utilizes solid-state silicon-ava-
lanche technology for superior clamping performance and
DC electrical characteristics. It has been optimized for
protection of digital lines in cellular phones and other
portable electronics.
The device replaces two discrete components in a
small footprint. It consists of a TVS diode and a series
1K Ohm resistor. The TVS diode presents a maximum
loading capacitance of 15pF for maximum signal
integrity. The TVS diodes provide effective suppression
of ESD voltages in excess of ±15kV (air discharge) and
±8kV (contact discharge) per IEC 61000-4-2, level 4.
The EClamp0501T is in a 3-pin, SLP1006P3T package.
It measures 1.0 x 0.6 mm with a nominal height of only
0.4mm. The leads are spaced at a pitch of 0.65mm
and are finished with lead-free NiPdAu. Each device
will protect one line operating at 5 volts. It gives the
designer the flexibility to protect single lines in applica-
tions where arrays are not practical. The small pack-
age makes it ideal for use in portable electronics such
as cell phones, digital still cameras, and PDAs.
EClamp0501T
Features
Transient protection for data lines to
IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
Cable Discharge Event (CDE)
Ultra-small package (1.0 x 0.6 x 0.4mm)
Protects one data line
TVS working voltage: 5V
Series Resistor: 1K Ohm
Capacitance: 15pF (Maximum at VR = 0V)
Low leakage current
Solid-state silicon-avalanche technology
Mechanical Characteristics
SLP1006P3T package
Pb-Free, Halogen Free, RoHS/WEEE Compliant
Nominal Dimensions: 1.0 x 0.6 x 0.4 mm
Lead Finish: NiPdAu
Molding compound flammability rating: UL 94V-0
Marking : Marking code, cathode band
Packaging : Tape and Reel
Applications
Cellular Handsets & Accessories
Personal Digital Assistants (PDAs)
Notebooks & Handhelds
Portable Instrumentation
Peripherals
MP3 Players
Schematic
Package Configuration
1.0
1K
Ω
1
15pF
2
0.60
0.65
3
0.40
3 Pin SLP package (Bottom Side View)
Nominal Dimensions in mm
1
www.semtech.com
Pin Identification and Configuration
(Top Side View)
Revision 04/14/2010
EClamp0501T
PROTECTION PRODUCTS
Absolute Maximum Rating
R ating
Peak Pulse Power (tp = 8/20
μ
s)
Maximum Peak Pulse Current (tp = 8/20
μ
s)
ESD p er IEC 61000-4-2 (Air)
1
ESD p er IEC 61000-4-2 (Contact)
Op erating Temp erature
Storage Temp erature
1
Symbol
P
p k
I
p p
V
ESD
T
J
T
STG
Value
25
2
+/- 17
+/- 12
-40 to +85
-55 to +150
Units
Watts
A mp s
kV
°C
°C
Notes:
1) ESD rating between pin 1 and ground. Pin 2 not rated for IEC level ESD discharges
Electrical Characteristics (T=25
o
C)
P ar am et er
T VS Reverse Stand-Off Voltage
T VS Reverse Breakdown Voltage
T VS Reverse Leakage Current
Total Series Resistance
Total Cap acitance
S y m b ol
V
RWM
V
BR
I
R
R
C
in
I
t
= 1mA
V
RWM
= 5.0V
Each Line
Inp ut to Gnd,
Each Line
V
R
= 0V, f = 1MHz
850
10
1000
12
6
8
Con d i t i on s
Mi n i mu m
Ty p i c a l
M ax i m u m
5
10
0.5
1150
15
Units
V
V
μ
A
Ohms
pF
Pin Identification and Configuration
Pin
1
2
3
Symbol
I/O In
I/O Out
GN D
Identification
Data Inp ut (Connector Side)
Data Outp ut (To Protected IC)
Ground
2
1
3
Pin Configuration (Top View)
©
2010 Semtech Corp.
2
www.semtech.com
EClamp0501T
PROTECTION PRODUCTS
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
10
Power Derating Curve
110
100
90
% of Rated Power or I
PP
80
70
60
50
40
30
20
10
0
Peak Pulse Power - P
PP
(kW)
1
0.1
0.01
0.1
1
10
100
Pulse Duration - tp (us)
0
25
50
75
100
o
125
150
Ambient Temperature - T
A
( C)
Normalized Junction Capacitance vs. Reverse Voltage
1.1
1
0.9
0.8
C
J
(V
R
) / C
J
(V
R
=0)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
Reverse Voltage - V
R
(V)
4
5
f = 1 MHz
Forward Voltage vs. Forward Current
8
7
Forward Voltage - V
F
V)
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Forward Current - I
F
(A)
Waveform
Parameters:
tr = 8μs
td = 20μs
ESD Clamping (Measured between Pin2 and Gnd)
(8kV Contact per IEC 61000-4-2)
CH1 S21
Insertion Loss S21
LOG
6 dB / REF 0 dB
1: -23.787 dB
300.797 MHz
0 dB
-6 dB
-12 dB
-18 dB
-24 dB
1
4
5
2: -30.249 dB
800.000 MHz
3: -30.785 dB
900.000 MHz
4: -26.674 dB
1.8 GHz
5: -21.176 dB
2.5 GHz
-30 dB
2
3
-36 dB
1
MHz
10
MHz
100
MHz
3
1
GHz GHz
.
STOP 3000 000000 MHz
Note: Data is taken with a 10x attenuator
©
2010 Semtech Corp.
3
START. 030 MHz
www.semtech.com
EClamp0501T
PROTECTION PRODUCTS
Applications Information
Device Connection Options
This device is designed to protect one data line. The
device is unidirectional and may be used on lines
where the signal polarity is above ground. The cathode
band should be placed towards the line that is to be
protected.
Circuit Board Layout Recommendations for Suppres-
sion of ESD.
Good circuit board layout is critical for the suppression
of ESD induced transients. The following guidelines are
recommended:
Place the TVS near the input terminals or connec-
tors to restrict transient coupling.
Minimize the path length between the TVS and the
protected line.
Minimize all conductive loops including power and
ground loops.
The ESD transient return path to ground should be
kept as short as possible.
Never run critical signals near board edges.
Use ground planes whenever possible.
Circuit Diagram
1K
Ω
1
15pF
2
3
©
2010 Semtech Corp.
4
www.semtech.com
EClamp0501T
PROTECTION PRODUCTS
Applications Information - Spice Model
R1
1
D1
1K
Ω
2
3
EClamp0501T Spice Model
Table 1 - EClamp0501T Spice Parameters
Parameter
IS
BV
VJ
RS
IB V
CJO
TT
M
N
EG
Unit
Amp
Volt
Volt
Ohm
A mp
Farad
sec
--
--
eV
D1 (T VS)
2E-15
7.56
0.776
0.912
1.0E-3
11.5E-12
2.541E-9
0.23
1.1
1.11
©
2010 Semtech Corp.
5
www.semtech.com
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参数对比
与ECLAMP0501T.TCT相近的元器件有:ECLAMP0501T。描述及对比如下:
型号 ECLAMP0501T.TCT ECLAMP0501T
描述 Low Profile EClamp垄莽1-Line ESD protection Low Profile EClamp垄莽1-Line ESD protection
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