EDI88128CS
128Kx8 Monolithic SRAM, SMD 5962-89598
FEATURES
Access Times of 15*, 17, 20, 25, 35, 45, 55ns
CS# and OE# Functions for Bus Control
2V Data Retention (EDI88128LPS)
TTL Compatible Inputs and Outputs
Fully Static, No Clocks
Organized as 128Kx8
Commercial, Industrial and Military Temperature Ranges
Thru-hole and Surface Mount Packages JEDEC Pinout
• 32 pin Ceramic DIP, 400 mil (Package 102)
• 32 pin Ceramic DIP, 600 mil (Package 9)
• 32 lead Ceramic ZIP (Package 100)
• 32 lead Ceramic SOJ (Package 140)
• 32 pad Ceramic LCC (Package 141)
• 32 lead Ceramic Flatpack (Package 142)
Single +5V (±10%) Supply OperationThe EDI88128CS is
a high speed, high performance, 128Kx8 megabit density
Monolithic CMOS Static RAM.
The device has eight bi-directional input-output lines to provide
simultaneous access to all bits in a word. An automatic power down
feature permits the on-chip circuitry to enter a very low standby
mode and be brought back into operation at a speed equal to the
address access time.
A Low Power version with 2V Data Retention (EDI88128LPS) is
also available for battery back-up opperation. Military product is
available compliant to MIL-PRF-38535.
* 15ns access time is advanced information, contact factory for availability.
This product is subject to change without notice.
FIGURE 1 – PIN CONFIGURATION
32 DIP
32 SOJ
32 LCC
32 FLATPACK
TOP VIEW
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 V
CC
31 A15
30 NC
29 WE#
28 A13
27 A8
26 A9
25 A11
24 OE#
23 A10
22 CS#
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
PIN DESCRIPTION
32 ZIP
TOP VIEW
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
2 V
CC
4
A15
6
NC
8
WE#
10 A13
12 A8
14 A9
16 A11
18 OE#
20 A10
22 CS#
24 I/O7
26 I/O6
28 I/O5
30 I/O4
32 I/O3
A
0-16
I/O0-7
A0-16
WE#
CS#
OE#
VCC
VSS
NC
Data Inputs/Outputs
Address Inputs
Write Enable
Chip Select
Output Enable
Power (+5V ±10%)
Ground
Not Connected
BLOCK DIAGRAM
Memory Array
Address
Buffer
Address
Decoder
I/O
Circuits
I/O
0-7
WE#
CS#
OE#
Microsemi Corporation reserves the right to change products or specifications without notice.
October 2011
Rev. 12
© 2011 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
EDI88128CS
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
SS
Operating Temperature T
A
(Ambient)
Commercial
Industrial
Military
Storage Temperature, Plastic
Power Dissipation
Output Current
Junction Temperature, T
J
-0.5 to 7.0
0 to +70
-40 to +85
-55 to +125
-65 to +150
1.5
20
175
Unit
V
°C
°C
°C
°C
W
mA
°C
OE#
X
H
L
X
CS#
H
L
L
L
WE#
X
H
H
L
TRUTH TABLE
Mode
Standby
Output Deselect
Read
Write
Output
High Z
High Z
Data Out
Data In
Power
Icc2, Icc3
Icc1
Icc1
Icc1
Recommended Operating Conditions
Parameter
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
4.5
0
2.2
-0.3
Typ
5.0
0
—
—
Max
5.5
0
V
CC
+0.5
+0.8
Unit
V
V
V
V
NOTE:
Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions greater than those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE
T
A
= +25°C
Parameter
Symbol
Condition
Max
CSOJ,
LLC
ZIP, DIP,
Flatpack
Unit
Address Lines
Data Lines
C
I
C
O
V
IN
= V
CC
or V
SS
, f = 1.0MHz
V
OUT
= V
CC
or V
SS
, f = 1.0MHz
12
14
pF
pF
These parameters are sampled, not 100% tested.
DC CHARACTERISTICS
V
CC
= 5.0V, -55°C
≤
T
A
≤
+125°C
Parameter
Input Leakage Current
Output Leakage Current
Operating Power Supply Current
Standby (TTL) Power Supply Current
Full Standby Power Supply Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions : V
IL
= 0.3V, V
IH
= V
CC
-0.3V
Symbol
I
LI
I
LO
Icc
1
Icc
2
Icc
3
V
OL
V
OH
Conditions
V
IN
= 0V to V
CC
V
I/O
= 0V to V
CC
WE# = V
IH
, CS# = V
IL
, I
I/O
= 0mA, CS2 = V
IH
CS#
≥
V
IH
, V
IN
≤
V
IH
or
≥
V
IL,
f = 0Hz
CS#
≥
V
CC
-0.2V
V
IN
≥
V
CC
-0.2V or V
IN
≤
0.2V, f = 0Hz
I
OL
= 8.0mA
I
OH
= -4.0mA
(15-17ns)
(20ns)
(25-55ns)
(17-55ns)
(15ns)
CS (17-55ns)
CS (15ns)
LPS
Min
—
—
—
—
—
—
—
—
—
—
—
2.4
Typ
—
—
3
—
—
—
—
Max
±5
±10
300
225
200
25
60
10
15
5
0.4
—
Units
μA
μA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
Microsemi Corporation reserves the right to change products or specifications without notice.
October 2011
Rev. 12
© 2011 Microsemi Corporation. All rights reserved.
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
EDI88128CS
AC CHARACTERISTICS – READ CYCLE (15 to 20ns)
V
CC
= 5.0V, Vss = 0V, -55°C
≤
T
A
≤
+125°C
Parameter
JEDEC
Read Cycle Time
Address Access Time
Chip Enable Access Time
Chip Enable to Output in Low Z (1)
Chip Disable to Output in High Z (1)
Output Hold from Address Change
Output Enable to Output Valid
Output Enable to Output in Low Z (1)
Output Disable to Output in High Z(1)
Chip Enable to Power Up (1)
Chip Enable to Power Down (1)
1. This parameter is guaranteed by design but not tested.
t
AVAV
t
AVQV
t
ELQV
t
ELQX
t
EHQZ
t
AVQX
t
GLQV
t
GLQX
t
GHQZ
t
ELICCH
t
EHICCL
Symbol
Alt.
t
RC
t
AA
t
ACS
t
CLZ
t
CHZ
t
OH
t
OE
t
OLZ
t
OHZ
t
PU
t
PD
0
0
0
3
Min
15
15ns*
Max
15
15
3
8
0
6
0
6
0
15
Min
17
17ns
Max
17
17
3
8
0
6
0
6
0
17
Min
20
20ns
Max
Units
ns
20
20
10
8
8
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC CHARACTERISTICS – READ CYCLE (25 to 55ns)
V
CC
= 5.0V, Vss = 0V, -55°C
≤
T
A
≤
+125°C
Symbol
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access Time
Chip Enable to Output in Low Z (1)
Chip Disable to Output in High Z (1)
Output Hold from Address Change
Output Enable to Output Valid
Output Enable to Output in Low Z (1)
Output Disable to Output in High Z(1)
Chip Enable to Power Up (1)
Chip Enable to Power Down (1)
1. This parameter is guaranteed by design but not tested.
JEDEC
t
AVAV
t
AVQV
t
ELQV
t
ELQX
t
EHQZ
t
AVQX
t
GLQV
t
GLQX
t
GHQZ
t
ELICCH
t
EHICCL
Alt.
t
RC
t
AA
t
ACS
t
CLZ
t
CHZ
t
OH
t
OE
t
OLZ
t
OHZ
t
PU
t
PD
0
25
0
10
0
35
0
10
0
15
0
45
3
12
0
15
0
20
0
55
Min
25
25
25
3
20
0
20
0
20
25ns
Max
Min
35
35ns
Max
35
35
3
Min
45
45ns
Max
45
45
3
20
0
Min
55
55ns
Max
55
55
20
25
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC TEST CONDITIONS
Figure 1
Vcc
Figure 2
Vcc
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
NOTE: For t
EHQZ
, t
GHQZ
and t
WLQZ
, CL = 5pF Figure 2
480Ω
480Ω
V
SS
to 3.0V
5ns
1.5V
Figure 1
Q
255Ω
30pF
Q
255Ω
5pF
Microsemi Corporation reserves the right to change products or specifications without notice.
October 2011
Rev. 12
© 2011 Microsemi Corporation. All rights reserved.
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
EDI88128CS
AC CHARACTERISTICS – WRITE CYCLE (15 to 20ns)
V
CC
= 5.0V, Vss = 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Write Cycle Time
Chip Enable to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Data Hold Time
Write to Output in High Z (1)
Data to Write Time
Output Active from End of Write (1)
1. This parameter is guaranteed by design but not tested.
Symbol
JEDEC
t
AVAV
t
ELWH
t
ELEH
t
AVWL
t
AVEL
t
AVWH
t
AVEH
t
WLWH
t
WLEH
t
WHAX
t
EHAX
t
WHDX
t
EHDX
t
WLQZ
t
DVWH
t
DVEH
t
WHQX
15ns*
Alt.
t
WC
t
CW
t
CW
t
AS
t
AS
t
AW
t
AW
t
WP
t
WP
t
WR
t
WR
t
DH
t
DH
t
WHZ
t
DW
t
DW
t
WLZ
Min
15
12
12
0
0
12
12
12
12
0
0
0
0
0
7
7
3
Max
Min
17
13
13
0
0
13
13
13
13
0
0
0
0
0
8
8
3
17ns
Max
Min
20
15
15
0
0
15
15
15
15
0
0
0
0
0
10
10
3
20ns
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7
8
8
AC CHARACTERISTICS – WRITE CYCLE (25 to 55ns)
V
CC
= 5.0V, Vss = 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Write Cycle Time
Chip Enable to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Data Hold Time
Write to Output in High Z (1)
Data to Write Time
Output Active from End of Write (1)
1. This parameter is guaranteed by design but not tested.
Symbol
JEDEC
Alt.
t
AVAV
t
WC
t
E1LWH
t
CW
t
ELEH
t
CW
t
AVWL
t
AS
t
AVEL
t
AS
t
AVWH
t
AW
t
AVEH
t
AW
t
WLWH
t
WP
t
WLEH
t
WP
t
WHAX
t
WR
t
EHAX
t
WR
t
WHDX
t
DH
t
EHDX
t
DH
t
WLQZ
t
WHZ
t
DVWH
t
DW
t
DVEH
t
DW
t
WHQX
t
WLZ
25ns
Min
25
20
20
0
0
20
20
20
20
0
0
0
0
0
15
15
3
Max
Min
35
25
25
0
0
25
25
30
30
0
0
0
0
0
20
20
3
35ns
Max
Min
45
35
35
0
0
35
35
30
30
5
5
0
0
0
20
20
3
45ns
Max
Min
55
45
45
0
0
45
45
35
35
5
5
0
0
0
25
25
3
55ns
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
13
15
20
Microsemi Corporation reserves the right to change products or specifications without notice.
October 2011
Rev. 12
© 2011 Microsemi Corporation. All rights reserved.
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
EDI88128CS
FIGURE 2 – TIMING WAVEFORM – READ CYCLE
t
AVAV
ADDRESS
t
AVAV
CS#
t
AVQV
ADDRESS 2
ADDRESS
ADDRESS 1
t
AVQV
DATA I/O
t
AVQX
DATA 1
DATA 2
t
ELQV
t
ELQX
t
ELICCH
Icc
t
EHQZ
t
EHICCL
OE#
READ CYCLE 1 (WE# HIGH; OE#, CS# LOW)
DATA I/O
t
GLQV
t
GLQX
READ CYCLE 2 (WE# HIGH)
t
GHQZ
FIGURE 3 – WRITE CYCLE – WE# CONTROLLED
t
AVAV
ADDRESS
t
AVWH
t
ELWH
CS#
t
WHAX
t
AVWL
WE#
t
WLWH
t
DVWH
t
WHDX
DATA IN
DATA VALID
t
WLQZ
DATA OUT
HIGH Z
t
WHQX
WRITE CYCLE 1, WE# CONTROLLED
FIGURE 4 – WRITE CYCLE – CS# CONTROLLED
t
AVAV
ADDRESS
t
AVEH
t
ELEH
CS#
t
EHAX
t
AVEL
WE#
t
WLEH
t
DVEH
t
EHDX
DATA IN
DATA OUT
HIGH Z
DATA VALID
WRITE CYCLE 2, CS# CONTROLLED
Microsemi Corporation reserves the right to change products or specifications without notice.
October 2011
Rev. 12
© 2011 Microsemi Corporation. All rights reserved.
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
