型号
- 型号
- 关键词
SRAM Module, 512KX8, 35ns, Hybrid, PDIP32,
厂商名称：Microsemi
厂商官网：https://www.microsemi.com
下载文档| 型号 | EDI8F8513C35M6C | EDI8F8513C20M6C | EDI8F8513C25M6C |
|---|---|---|---|
| 描述 | SRAM Module, 512KX8, 35ns, Hybrid, PDIP32, | SRAM Module, 512KX8, 20ns, Hybrid, PDIP32, | SRAM Module, 512KX8, 25ns, Hybrid, PDIP32, |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
| 最长访问时间 | 35 ns | 20 ns | 25 ns |
| I/O 类型 | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PDIP-T32 | R-PDIP-T32 | R-PDIP-T32 |
| JESD-609代码 | e0 | e0 | e0 |
| 内存密度 | 4194304 bit | 4194304 bit | 4194304 bit |
| 内存集成电路类型 | SRAM MODULE | SRAM MODULE | SRAM MODULE |
| 内存宽度 | 8 | 8 | 8 |
| 端子数量 | 32 | 32 | 32 |
| 字数 | 524288 words | 524288 words | 524288 words |
| 字数代码 | 512000 | 512000 | 512000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C |
| 组织 | 512KX8 | 512KX8 | 512KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | DIP | DIP |
| 封装等效代码 | DIP32,.6 | DIP32,.6 | DIP32,.6 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 最大压摆率 | 0.39 mA | 0.57 mA | 0.57 mA |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO |
| 技术 | HYBRID | HYBRID | HYBRID |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL |
| 厂商名称 | Microsemi | Microsemi | - |
