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EGP10C/70

Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Vishay(威世)
零件包装代码
DO-41
包装说明
O-PALF-W2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-204AL
JESD-30 代码
O-PALF-W2
JESD-609代码
e0
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-65 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
150 V
最大反向恢复时间
0.05 µs
表面贴装
NO
端子面层
TIN LEAD
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
EGP10A thru EGP10G
Vishay General Semiconductor
Glass Passivated Ultrafast Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
j
max.
1.0 A
50 V to 200 V
30 A
50 ns
0.95 V, 1.25 V
150 °C
®
*Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
*
nted
Pate
DO-204AL (DO-41)
Features
Cavity-free glass-passivated junction
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-204AL, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Maximum Ratings
T
A
= 25 °C unless otherwise specified
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 0.375"
(9.5 mm) lead length at T
A
= 55 °C
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
Operating and storage temperature range
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
,T
STG
EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G
50
35
50
100
70
100
150
105
150
1.0
30
- 65 to + 150
200
140
200
300
210
300
400
280
400
Unit
V
V
V
A
A
°C
Document Number 88582
24-Oct-05
www.vishay.com
1
EGP10A thru EGP10G
Vishay General Semiconductor
Electrical Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Maximum instantaneous
forward voltage
Maximum DC reverse
current at rated DC blocking
voltage
Maximum reverse recovery
time
Typical junction capacitance
Test condition
at 1.0 A
T
A
= 25 °C
T
A
= 125 °C
at I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
at 4.0 V, 1 MHz
Symbol EGP10A EGP10B EGP10C EGP10D
V
F
I
R
0.95
5.0
100
50
22
15
EGP10F
EGP10G Unit
V
µA
1.25
t
rr
C
J
ns
pF
Thermal Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Typical thermal resistance
(1)
Notes:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
Symbol
R
θJA
EGP10A
EGP10B
EGP10C
50
EGP10D
EGP10F EGP10G
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
1.0
30
Average Forward Rectified Current (A)
Peak Forward Surge Current (A)
25
20
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
0.5
15
10
5.0
0
Resistive or Inductive Load
0.375” (9.5mm) Lead Length
0
0
25
50
75
100
125
150
175
1
10
100
Lead Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88582
24-Oct-05
EGP10A thru EGP10G
Vishay General Semiconductor
50
70
Pulse
Width
= 300
µs
1% Duty Cycle
10
T
J
= 150 °C
60
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50mVp-p
Instantaneous Forward Current (A)
Junction Capacitance (pF)
50
40
30
20
10
0
1
T
J
= 25 °C
0.1
EGP10A – EGP10D
EGP10F – EGP10G
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
EGP10A – EGP10D
EGP10F – EGP10G
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
1000
100
100
T
J
= 150 °C
10
T
J
= 100 °C
Transient Thermal Impedance (°C/W)
80
100
Instantaneous Reverse Leakage
Current (µA)
10
1
1
0.1
T
J
= 25 °C
0.01
0
20
40
60
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
Pulse Duration, sec. (t)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
NOTE:
Lead diameter is
0.026 (0.66)
for suffix “E” part numbers
0.023 (0.58)
Document Number 88582
24-Oct-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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