BL
FEATURES
GALAXY ELECTRICAL
EGP10A(Z) --- EGP10G(Z)
VOLTAGE RANGE: 50 --- 400 V
CURRENT: 1.0 A
HIGH EFFICIENCY RECTIFIER
Low cost
Diffused junction
Low leakage
Low forward voltage
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO - 41
MECHANICAL DATA
Case:JEDEC DO--41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-750,Method 2026
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EGP
10A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
@T
A
=25
at rated DC blocking voltage @T
A
=125
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse uoltage of 4.0V DC.
3.Thermal resistance f rom junction to ambient.
EGP
10B
100
70
100
EGP
10C
150
105
150
1.0
EGP
10D
200
140
200
EGP
10F
300
210
300
EGP
10G
400
280
400
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
50
35
50
@T
A
=75
30.0
A
0.95
5.0
100.0
50
22
50
- 55 ---- + 150
- 55 ---- + 150
1.25
V
A
ns
pF
／Ｗ
(Note2)
(Note3)
15
Operating junction temperature range
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Document Number 0262008
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
EGP10A
(Z)---EGP10G(Z)
FIG.1 --TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
t
rr
+0.5A
D.U.T.
(+)
25VDC
(approx)
(-)
(+)
PULSE
GENERATOR
(NOTE2)
0
-0.25A
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
(-)
-1.0A
1cm
NOTE
S:1.RISETIM =7ns M
E
AX.INP IM E
UT P DANCE
Ω.22pF
=1M
2.RISETIM =10ns M
E
AX.SOUR IM E
CE P DANCE
=50Ω.
SE TIM BASEFOR 20/30 ns/cm
T E
FIG.3 --TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT
AMPERES
PEAK FORWARD SURGE CURRENT
AMPERES
FIG.4--TYPICAL REVERSE CHARACTERISTICS
100
10
1.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
T
J
=25
Pulse Width=300
µ
S
1.0
50\100\150\200V
300\400V
0.5
0.1
0.04
0.375"(9.5mm)LEAD LENGTH
0
0.01
0
0
25
50
75
100 125
150
175
0.2
0.4
0.6 0.8 1
1.2 1.4
1.6 1.8 2
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
NUMBER OF CYCLES AT 60Hz
FIG.5--TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,pF
FIG.6--FORWARD DERATING CURVE
35
30
25
20
15
10
5
0
0.1
EGP10A-EGP10D
EGP10F&EGP10G
T
J
=25
AVERAGE FORWARD CURRENT
30
25
20
15
10
5
0
E G P 10 A -E G P 10 G
T
J
= 1 25
8 .3 m s S in g le H a lf
S in e-W ave
AMPERES
1
4
10
100
1
10
100
REVERSE VOLTAGE,VOLTS
AMBIENT TEMPERATURE,
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Document Number 0262008
BL
GALAXY ELECTRICAL
2.
嵌入式系统
