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EGP50F/93

Rectifier Diode, 1 Phase, 1 Element, 5A, 300V V(RRM), Silicon, PLASTIC, GP20, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Vishay(威世)
包装说明
O-PALF-W2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用
EFFICIENCY
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
O-PALF-W2
JESD-609代码
e0
最大非重复峰值正向电流
150 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-65 °C
最大输出电流
5 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
300 V
最大反向恢复时间
0.05 µs
表面贴装
NO
端子面层
TIN LEAD
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
EGP50A thru EGP50G
Vishay Semiconductors
Glass Passivated Ultrafast Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
j
max.
5.0 A
50 V to 400 V
150 A
50 ns
0.95 V, 1.25 V
150 °C
®
ted*
aten
P
*Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly to
Patent No. 3,930,306
GP20
Features
Cavity-free glass-passivated junction
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
GP20, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Maximum Ratings
T
A
= 25 °C unless otherwise specified
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
L
= 55 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Operating and storage temperature range
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
,T
STG
EGP50A EGP50B EGP50C EGP50D EGP50F EGP50G
50
35
50
100
70
100
150
105
150
5
150
- 65 to + 150
200
140
200
300
210
300
400
280
400
Unit
V
V
V
A
A
°C
Document Number 88585
10-Aug-05
www.vishay.com
1
EGP50A thru EGP50G
Vishay Semiconductors
Electrical Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Maximum instantaneous
forward voltage
Maximum DC reverse
current at rated DC
blocking voltage
Maximum reverse
recovery time
Typical junction
capacitance
Test condition
at 5.0 A
T
A
= 25 °C
T
A
= 125 °C
at I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
at 4.0 V, 1 MHz
Symbol EGP50A EGP50B EGP50C EGP50D EGP50F EGP50G
V
F
I
R
0.95
5.0
50
50
95
75
1.25
Unit
V
µA
t
rr
C
J
ns
pF
Thermal Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Typical thermal resistance
(1)
Notes:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
Symbol
R
θJA
R
θJL
EGP50A EGP50B EGP50C EGP50D EGP50F EGP50G
20
5.0
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
6.0
175
Resistive or Inductive Load
Average Forward Rectified Current (A)
Peak Forward Surge Current (A)
5.0
150
125
100
75
50
25
0
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
4.0
3.0
Copper Heatsinks
2.0
1.0
0
0
L
T
L
0.375" (9.5mm) Lead Length
25
50
75
100
125
150
175
1
10
100
Lead Temperature ( °C)
Number of Cycles at 60 H
Z
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88585
10-Aug-05
EGP50A thru EGP50G
Vishay Semiconductors
50
Instantaneous Forward Current (A)
Pulse Width = 300
µs
1% Duty Cycle
210
180
T
J
= 150 °C
Junction Capacitance (pF)
10
T
J
= 25 °C
f = 1.0 MH
Z
Vsig = 50mVp-p
150
120
90
60
30
0
0.1
1
T
J
= 25 °C
0.1
EGP50A — EGP50D
EGP50F & EGP50G
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
EGP50A — EGP50D
EGP50F & EGP50G
1
10
100
1,000
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
Instantaneous Reverse Leakage Current
(µA)
100
T
J
= 150°C
10
T
J
= 125°C
1
T
J
= 75°C
0.1
100
Transient Thermal Impedance (°C/W)
100
10
1.0
0.01
T
J
= 25°C
0.001
0
20
40
60
80
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t, Pulse Duration (sec.)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
GP20
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.037 (0.94)
DIA.
Document Number 88585
10-Aug-05
www.vishay.com
3
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