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TUNING VARACTOR

Selection guide

TUNING VARACTOR

Selection Guide

PAGE

SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR

1-32

HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR

VBR = 30 V

VBR = 45 V

1-34

1-35

SILICON HYPERABRUPT JUNCTION TUNING VARACTOR

1-36

MICROWAVE SILICON HYPERABRUPT JUNCTION TUNING VARACTOR

1-39

A tuning varactor is a P-N diode that acts as a voltage controlled capacitor. These devices perform the

same function as the familiar, bulky, air dielectric stacked capacitors featured in traditional broadcast

band receivers.

1-31

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TUNING VARACTOR

Plastic package Surface Mount Silicon abrupt tuning varactor

SOT23 SURFACE MOUNT SILICON ABRUPT

TUNING VARACTOR

Description

This series of silicon tuning varactors have an epitaxial mesa design with a high temperature

passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family

is designed for a low cost medium to high volume market that may be supplied in tape and reel

for automated pick and place assembly on surface mount circuit boards.

Applications

The DH71000 series abrupt tuning varactor are offered in a large selection of capacitance range.

They provide the highest Q factor (low reverse series resistance) available for a 30 volts silicon device.

Typical applications include low noise narrow and moderate frequency bandwidth applications

(VCO mainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned

ﬁlters, phase shifters, delay line, etc.

NOTE:

Variation of the junction capacitance versus reverse voltage follows this equation:

)

(0 V)

1 + V

[

]

Reverse voltage

Built-in potential .7V for Si

.5 for abrupt tuning varactor

1-32

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TUNING VARACTOR

Plastic package Surface Mount Silicon abrupt tuning varactor

Electrical characteristics at Ta = +25° C

Reverse breakdown voltage, Vb = @10 µA: 30 V min.

Electrical

parameters

Test Conditions

Type

Breakdown

voltage

= 10 µA

min.

Junction

capacitance

F = 1 MHz

= 4 V

(1)

Tuning

ratio

Figure

of merit

= 4 V

F = 50 MHz

typ.

4300

4100

3900

3400

2200

2600

2200

Cj0V/Cj30V

typ.

4.0

4.5

4.6

4.7

4.8

4.9

5.0

DH71010

DH71016

DH71020

DH71030

DH71045

DH71067

DH71100

(1)

Other tolerance on request

Temperature ranges:

Operating junction (T

Packages

SOD323

Packages

SOT23

1.0 ± 20%

1.6 ± 20%

2.0 ± 20%

3.0 ± 20%

4.5 ± 20%

6.7 ± 10%

10 ± 10%

-55° C to +125° C

Storage:

-65° C to +150° C

SOT23

SOT143

DH71010

DH71016

DH71020

DH71030

DH71045

DH71067

DH71100

DH71010-60

DH71016-60

DH71020-60

DH71030-60

DH71045-60

DH71067-60

DH71100-60

DH71010-51

DH71016-51

DH71020-51

DH71030-51

DH71045-51

DH71067-51

DH71100-51

DH71010-53

DH71016-53

DH71020-53

DH71030-53

DH71045-53

DH71067-53

DH71100-53

DH71010-54

DH71016-54

DH71020-54

DH71030-54

DH71045-54

DH71067-54

DH71100-54

DH71010-70

DH71016-70

DH71020-70

DH71030-70

DH71045-70

DH71067-70

DH71100-70

(1) Other conﬁguration available on request.

How to order?

DH71010

Diode type

Package

information

51: single SOT23

53: dual common

cathode SOT23

54: dual common

anode SOT23

60: single SOD323

70: dual SOT143

Conditioning

T3: 3000 pieces

tape & reel

T10: 10000 pieces

tape & reel

blank: bulk

1-33

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TUNING VARACTOR

High Q silicon abrupt junction tuning varactor

HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR

30 V

Description

This series of high Q epi-junction microwave tuning varactors (30 V) incorporates a passivated mesa

technology. It is well suited for frequency tuning applications up to Ku band.

HIP

IODES

Gold

dia

HIP AND

ACKAGED

IODES

(10 µA)

≥

30 V

junction

capacitance

= 4 V

f = 1 MH

µm

typ.

EH71004

EH71006

EH71008

EH71010

EH71012

EH71016

EH71020

EH71025

EH71030

EH71037

EH71045

EH71054

EH71067

EH71080

EH71100

EH71120

EH71150

EH71180

EH71200

EH71220

EH71270

EH71330

EH71390

EH71470

EH71560

EH71680

EH71820

EH71999

C2a

C2b

C2c

C2d

100

110

120

140

150

170

180

200

220

250

270

300

330

350

370

410

450

500

540

590

650

720

800

± 20 % (2)

0.4

0.6

0.8

1.0

1.2

1.6

2.0

2.5

3.0

3.7

4.5

5.4

± 10 % (2)

6.7

8.0

10.0

12.0

15.0

18.0

20.0

22.0

27.0

33.0

39.0

47.0

56.0

68.0

82.0

100.0

min.

4500

4400

4300

4200

4100

3900

3600

3400

3200

3000

2800

2600

2400

2200

2000

1800

1700

1500

1400

1300

1200

950

750

650

500

400

300

DH71004

DH71006

DH71008

DH71010

DH71012

DH71016

DH71020

DH71025

DH71030

DH71037

DH71045

DH71054

DH71067

DH71080

DH71100

DH71120

DH71150

DH71180

DH71200

DH71220

DH71270

DH71330

DH71390

DH71470

DH71560

DH71680

DH71820

DH71999

Fig. of

merit

= 4 V

f = 50 MH

Type

ASE

APACITANCE

Case

Cb= 0.18 pF (3)

F27d

Cb= 0.18 pF (3)

F27d

min.

3.0

3.4

3.7

4.0

4.3

4.5

4.6

4.7

4.8

4.9

5.0

5.1

5.2

ACKAGED

IODES

(1)

Standard cases

Other cases

Tuning

ratio

ASE

APACITANCE

Case

Cb= 0.12 pF (3) min.

M208

3.3

M208

3.7

M208

4.0

M208

4.3

M208

4.5

M208

4.6

M208

4.7

M208

4.8

M208

4.8

M208

4.8

M208

4.9

M208

4.9

Cb= 0.2 pF (3)

BH142

4.9

5.0

5.1

5.2

Tuning

ratio

Characteristics at 25°C

Test Conditions

Type

Case

(1) Custom cases available on request

(2) Closer capacitance tolerances available on request

(3) C

= Cj + Cb

1-34

Temperature ranges:

Operating junction (T

) : -55° C to +150° C

Storage

: -65° C to +175° C

SALES OFFICES: VISIT OUR WEB SITE AT

http://www.temex.net

TUNING VARACTOR

High Q silicon abrupt junction tuning varactor

45 V

Description

This series of high Q epi-junction microwave tuning varactors (45 V) incorporates a passivated mesa

technology. It is well suited for frequency tuning applications up to X band.

Chip diodes

OLD

Characteristics at 25° C D

Test conditions

Type

Case

µm

typ.

EH72004

EH72006

EH72008

EH72010

EH72012

EH72016

EH72020

EH72025

EH72030

EH72037

EH72045

EH72054

EH72067

EH72080

EH72100

EH72120

EH72150

EH72180

EH72200

EH72220

EH72270

EH72330

EH72390

EH72470

EH72560

EH72680

EH72820

EH72999

(1)

(2)

(3)

Chip and packaged diodes

(10 µA)

≥

45 V

Junction

apacitance

= 4 V

f = 1 MH

± 20 % (2)

0.4

0.6

0.8

1.0

1.2

1.6

2.0

2.5

3.0

3.7

4.5

5.4

± 10 % (2)

6.7

8.0

10.0

12.0

15.0

18.0

20.0

22.0

27.0

33.0

39.0

± 10 % (2)

47.0

56.0

68.0

± 10 % (2)

82.0

100.0

3000

2900

2800

2700

2600

2500

2400

2300

2200

2000

1900

1800

1700

1600

1500

1400

1300

1200

1100

1000

900

800

700

600

450

350

250

Fig. of

erit

= 4 V

f = 50 MH

TANDARD

ASES

Packaged diodes (1)

THER

ASES

Tuning

Ratio

Tuning

Ratio

Case

Capacitance

Case

min. Cb

3.5

3.9

4.2

4.5

4.7

5.0

5.2

5.4

5.5

5.6

5.7

5.8

5.9

6.0

= 0.12 pF (3)

M208

= 0.2pF (3)

BH142

min.

3.7

4.1

4.5

4.7

4.9

5.2

5.5

5.6

5.7

5.8

5.9

6.0

Case

Capacitance

Type

min.

DH72004

DH72006

DH72008

DH72010

DH72012

DH72016

DH72020

DH72025

DH72030

DH72037

DH72045

DH72054

DH72067

DH72080

DH72100

DH72120

DH72150

DH72180

DH72200

DH72220

DH72270

DH72330

DH72390

DH72470

DH72560

DH72680

DH72820

DH72999

Case

Cb = 0.18 pF (3)

F27d

Cb =0.18pF (3)

F27d

Cb = 0.18 pF (3)

BH28

Cb = 0.4 pF (3)

BH141

C2a

C2b

C2c

C2d

C2g

110

120

140

150

170

190

210

230

250

280

310

340

380

420

440

470

520

570

620

680

740

820

900

1000

Custom cases available on request

Closer capacitance tolerances available on request

CT = Cj + Cb

Temperature ranges:

Operating junction (Tj) : -55° C to +150° C

Storage

: -65° C to +175° C

1-35

SALES OFFICES: VISIT OUR WEB SITE AT

http://www.temex.net