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EK09V

Rectifier Diode, Schottky, 1 Element, 0.7A, Silicon,

器件类别:分立半导体    二极管   

厂商名称:SANKEN

厂商官网:http://www.sanken-ele.co.jp/en/

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器件参数
参数名称
属性值
厂商名称
SANKEN
包装说明
O-PALF-W2
Reach Compliance Code
unknown
ECCN代码
EAR99
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
O-PALF-W2
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-40 °C
最大输出电流
0.7 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
认证状态
Not Qualified
最大反向恢复时间
0.1 µs
表面贴装
NO
技术
SCHOTTKY
端子形式
WIRE
端子位置
AXIAL
文档预览
SANKEN ELECTRIC CO., LTD.
EK09
1. Scope
The present specifications shall apply to an EK09.
2. Outline
Type
Structure
Applications
Silicon Schottky Barrier Diode
Resin Molded
High Frequency Rectification
3. Flammability
UL94V-0(Equivalent)
050323
1/5
61426-01
SANKEN ELECTRIC CO., LTD.
4. Absolute maximum ratings
No.
1
2
3
4
5
6
7
Item
Transient Peak Reverse Voltage
Peak Reverse Voltage
Average Forward Current
Peak Surge Forward Current
I
2
t Limiting Value
Junction Temperature
Storage Temperature
Symbol
Unit
Rating
EK09
Conditions
V
RSM
V
RM
I
F(AV)
I
FSM
I
2
t
T
j
T
stg
V
V
A
A
A
2
s
°C
°C
90
90
0.7
10
0.5
-40~+150
-40~+150
Refer to Derating of 7
10msec.
Half sinewave, one shot
1msec≤t≤10msec
5. Electrical characteristics (Ta=25°C
,unless
otherwise specified)
No.
1
2
3
Item
Symbol
Unit
Value
Conditions
Forward Voltage Drop
Reverse Leakage Current
Reverse Leakage Current Under
High Temperature
Thermal Resistance
V
F
I
R
H½I
R
R
th(j-l)
V
mA
mA
0.81 max.
1.0 max.
30 max.
I
F
=0.7A
V
R
=V
RM
V
R
=V
RM
, T
j
=150°C
4
°C /W
20 max.
Between Junction and Lead
050323
2/5
61426-01
SANKEN ELECTRIC CO., LTD.
6. Characteristics
EK09
I
F(AV)
- P
F
0.7
0.6
t
T
Tj=150°C
Forward Power Dissipation (W)
0.5
0.4
0.3
t/T=1/2
t/T=1/6
P
F
(W)
t/T=1/3,sinewave
0.2
0.1
0.0
0.0
0.1
0.2
0.3
0.4
DC
0.5
0.6
0.7
Average Forward Current (A)
I
F(AV)
(A)
V
R
- P
R
3.0
Tj=150°C
t
T
Reverse Power Dissipation (W)
2.0
1-t/T=5/6
P
R
(W)
1-t/T=2/3
1.0
1-t/T=1/2
sinewave
0.0
0
10
20
30
40
50
60
70
80
90
Reverse Voltage (V)
V
R
(V)
050323
3/5
61426-01
SANKEN ELECTRIC CO., LTD.
7. Derating
EK09
Tl - I
F(AV)
0.7
0.6
t/T=1/6
Average Forward Current (A)
DC
V
R
=90V
0.5
t/T=1/3
I
F(AV)
(A)
0.4
t/T=1/2
0.3
sinewave
0.2
0.1
0.0
50
Tj=150°C
t
T
60
70
80
90
100
110
120
130
140
150
Tl (°C)
Lead
Temperature (
°C
)
050323
4/5
61426-01
SANKEN ELECTRIC CO., LTD.
8. Package information
8-1Package type, physical dimensions and material
EK09
62.3
±0.7
5.0
±0.2
※3
*1
*2
*3
The allowance position of Body against the center of whole lead wire is 0.5mm(max.)
The centric allowance of lead wire against center of physical body is 0.3mm(max.)
The burr may exit up to 2mm from the body of lead
φ0.6
±0.05
φ2.7
±
※1
0.2
※2
Dimensions in
8-2Appearance
The body shall be clean and shall not bear any stain, rust or flaw.
8-3Marking
Type number EK09 is abbreviated as
カ½ード表示
Cathode Band
K0
9
Lot number 1
First digit: Last digit of Year
Second digit: Month
From 1 to 9 for Jan. to Sep.
O for Oct., N for Nov., and D for Dec.
Lot number 2 (ten days)
½:
Top of the month
½½:
Middle of month
½½½:
End of month
050323
5/5
61426-01
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参数对比
与EK09V相近的元器件有:EK09V0、EK09W、EK09V1。描述及对比如下:
型号 EK09V EK09V0 EK09W EK09V1
描述 Rectifier Diode, Schottky, 1 Element, 0.7A, Silicon, Rectifier Diode, Rectifier Diode, Schottky, 1 Element, 0.7A, Silicon, Rectifier Diode, Schottky, 1 Element, 0.7A, Silicon,
厂商名称 SANKEN SANKEN SANKEN SANKEN
Reach Compliance Code unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99
包装说明 O-PALF-W2 - O-PALF-W2 O-PALF-W2
外壳连接 ISOLATED - ISOLATED ISOLATED
配置 SINGLE - SINGLE SINGLE
二极管元件材料 SILICON - SILICON SILICON
二极管类型 RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 O-PALF-W2 - O-PALF-W2 O-PALF-W2
元件数量 1 - 1 1
端子数量 2 - 2 2
最高工作温度 150 °C - 150 °C 150 °C
最低工作温度 -40 °C - -40 °C -40 °C
最大输出电流 0.7 A - 0.7 A 0.7 A
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND - ROUND ROUND
封装形式 LONG FORM - LONG FORM LONG FORM
认证状态 Not Qualified - Not Qualified Not Qualified
最大反向恢复时间 0.1 µs - 0.1 µs 0.1 µs
表面贴装 NO - NO NO
技术 SCHOTTKY - SCHOTTKY SCHOTTKY
端子形式 WIRE - WIRE WIRE
端子位置 AXIAL - AXIAL AXIAL
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