100 V, 47 A, 13.2 mΩ Low R
DS(ON)
N ch Trench Power MOSFET
EKI10198
Features
V
(BR)DSS
-------------------------------- 100 V (I
D
= 100
µA)
I
D
---------------------------------------------------------- 47 A
R
DS(ON)
-------- 18.4 mΩ max. (V
GS
= 10 V, I
D
= 23.4 A)
Q
g
------27.1 nC (V
GS
= 4.5 V, V
DS
= 50 V, I
D
= 23.4 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Package
TO-220
(4)
D
(1) (2) (3)
G D S
Not to scale
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Equivalent circuit
D(2)(4)
G(1)
S(3)
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Single Pulse Avalanche Energy
Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Unless otherwise specified, T
A
= 25 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
SM
E
AS
I
AS
P
D
T
J
T
STG
T
C
= 25 °C
PW ≤ 100µs
Duty cycle ≤ 1 %
V
DD
= 50 V, L = 1 mH,
I
AS
=11.2 A, unclamped,
R
G
= 4.7 Ω
Refer to Figure 1
T
C
= 25 °C
PW ≤ 100µs
Duty cycle ≤ 1 %
Test conditions
Rating
100
± 20
47
94
47
94
126
23.3
116
150
− 55 to 150
Unit
V
V
A
A
A
A
mJ
A
W
°C
°C
EKI10198-DS Rev.1.3
May. 29, 2014
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
1
EKI10198
Thermal Characteristics
Parameter
Thermal Resistance
(
Junction to Case)
Thermal Resistance
(
Junction to Ambient)
Unless otherwise specified, T
A
= 25 °C
Symbol
R
θJC
R
θJA
Test Conditions
Min.
−
−
Typ.
−
−
Max.
1.1
62.5
Unit
°C/W
°C/W
Electrical Characteristics
Unless otherwise specified, T
A
= 25 °C
Parameter
Drain to Source Breakdown
Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate Threshold Voltage
Static Drain to Source
On-Resistance
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (V
GS
= 10 V)
Total Gate Charge (V
GS
= 4.5 V)
Gate to Source Charge
Gate to Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source to Drain Diode Forward
Voltage
Source to Drain Diode Reverse
Recovery Time
Source to Drain Diode Reverse
Recovery Charge
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
R
G
C
iss
C
oss
C
rss
Q
g1
Q
g2
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V
I
D
= 23.4 A
V
GS
= 10 V, R
G
= 4.7 Ω
Refer to Figure 2
V
DS
= 50 V
I
D
= 23.4 A
Test Conditions
I
D
= 100 μA, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 23.4 A, V
GS
= 10 V
I
D
= 11.7 A, V
GS
= 4.5 V
f = 1 MHz
V
DS
= 25 V
V
GS
= 0 V
f = 1 MHz
Min.
100
−
−
1.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
2.0
13.2
14.0
1.1
3990
300
160
57.7
27.1
10.1
7.5
7.0
6.5
34.2
13.9
0.9
49.2
92.7
Max.
−
100
± 100
2.5
18.4
19.3
−
−
−
−
−
−
−
−
−
−
−
−
1.5
−
−
Unit
V
µA
nA
V
mΩ
mΩ
Ω
pF
nC
ns
V
SD
t
rr
Q
rr
I
S
= 23.4 A, V
GS
= 0 V
I
F
= 23.4 A
di/dt = 100 A/µs
Refer to Figure 3
−
−
−
V
ns
nC
EKI10198-DS Rev.1.3
May. 29, 2014
SANKEN ELECTRIC CO.,LTD.
2
EKI10198
Test Circuits and Waveforms
L
I
D
V
DS
R
G
V
GS
0V
V
DD
E
AS
½
V
(BR)DSS
1
2
L
I
AS
2
V
(BR)DSS
V
DD
V
(BR)DSS
I
AS
V
DS
I
D
V
DD
(a) Test Circuit
Figure 1 Unclamped Inductive Switching
(b) Waveform
R
L
90%
V
GS
V
DS
R
G
V
GS
0V
P.W. = 10
μs
Duty cycle
≤
1 %
(a) Test Circuit
Figure 2 Switching Time
t
d(on)
t
r
t
on
t
d(off)
t
f
t
off
10%
V
DD
V
DS
90%
10%
(b) Waveform
D.U.T.
I
F
L
I
F
V
DD
R
G
V
GS
0V
0V
di/dt
t
rr
I
RM
× 90 %
I
RM
(a) Test Circuit
Figure 3 Diode Reverse Recovery Time
(b) Waveform
EKI10198-DS Rev.1.3
May. 29, 2014
SANKEN ELECTRIC CO.,LTD.
3
EKI10198
RDS(ON)-ID characteristics (typical)
VGS=10V
45
40
35
40
Tc = 125℃
RDS(ON)-ID characteristics (typical)
VGS=4.5V
50
100
90
80
70
30
Tc = 125℃
ID-VGS characteristics (typical)
VDS=5V
RDS(ON) (mΩ )
RDS(ON) (mΩ )
30
25
20
15
10
5
0
0
60
ID (A)
75℃
75℃
50
40
20
25℃
25℃
30
10
20
10
0
Tc =125℃
75℃
25℃
10 20 30 40 50 60 70 80 90 100
0
0
10 20 30 40 50 60 70 80 90 100
0
1
2
3
4
5
ID (A)
ID (A)
VGS (V)
VDS-VGS characteristics (typical)
Tc=25℃
0.8
0.7
0.6
IDR-VSD characteristics (typical)
Tc=25℃
100
90
80
70
100
90
80
70
VGS=10V
IDR-VSD characteristics (typical)
VDS=0V
IDR (A)
VDS (V)
0.5
0.4
0.3
0.2
0.1
0.0
0
5
10
15
ID=23.4A
ID=20.4A
ID=11.7A
50
40
30
20
10
0
0
0.5
1
1.5
3V
0V
VGS=4.5V
IDR (A)
60
60
50
40
75℃
Tc =125℃
30
20
10
0
0
0.5
1
1.5
25℃
VGS (V)
VSD (V)
VSD (V)
Capacitance-VDS characteristics (typical)
10000
Ciss
Capacitance (pF)
VGS - Qg characteristics (typical)
15
3
Vth-Tc characteristics (typical)
Coss
VGS (V)
100
Ta=25℃
VGS=0V
f =1MHz
10
0
10
20
30
Crss
5
Tc=25℃
VDS=50V
ID=23.4A
Vth (V)
1000
10
2
1
ID=1mA
VGS=VDS
40
50
0
0
20
40
60
0
25
50
75
100
125
150
VDS (V)
Qg (nC)
Tc (℃)
RDS(ON)-Tc characteristics (typical)
35
30
25
35
30
RDS(ON)-Tc characteristics (typical)
130
125
25
BVDSS-Tc characteristics (typical)
RDS（ON） (mΩ)
RDS（ON） (mΩ)
20
15
10
5
0
25
50
75
100
125
150
20
15
10
5
0
25
50
75
100
125
150
BVDSS (V)
120
115
110
ID=23.4A
VGS=10V
ID=1mA
VGS=0V
ID=11.7A
VGS=4.5V
105
100
25
50
75
100
125
150
Tc (℃)
Tc (℃)
Tc (℃)
EKI10198-DS Rev.1.3
May. 29, 2014
SANKEN ELECTRIC CO.,LTD.
4
EKI10198
PD-Ta Derating
120
SAFE OPERATING AREA
1000
ID(pulse) MAX
PT=100μs
90
100
ID (A)
ＰＤ
(W)
60
10
PT=1ms
30
1
1 shot
Tc=25℃
0
0.1
0
50
100
150
0.1
1
10
100
Ta (℃)
VDS (V)
TRANSIENT THERMAL RESISTANCE - PULSE WIDTH
1.E+01
Rth j-c (℃/W)
1.E+00
1.E-01
Tc = 25℃
1shot
VDS < 10V
1.E-02
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
P.T. (sec)
EKI10198-DS Rev.1.3
May. 29, 2014
SANKEN ELECTRIC CO.,LTD.
5
