The EL2001 is a low cost monolithic high slew rate buffer
amplifier Built using the Elantec monolithic Complementary
Bipolar process this patented buffer has a
b
3 dB bandwidth of
70 MHz and delivers 100 mA yet draws only 1 3 mA of supply
current It typically operates from
g
15V power supplies but
will work with as little as
g
5V
This high speed buffer may be used in a wide variety of applica-
tions in military video and medical systems A typical example
is a general purpose op amp output current booster where the
buffer must have sufficiently high bandwidth and low phase
shift at the maximum frequency of the op amp
Elantec’s products and facilities comply with MIL-I-45208A
and other applicable quality specifications For information on
Elantec’s processing see the Elantec document QRA-1
Elan-
tec’s Processing Monolithic Integrated Circuits
Applications
Op amp output current booster
Cable line driver
A D input buffer
Low standby current systems
Connection Diagrams
EL2001 DIP Pinout
EL2001 SOL Pinout
Ordering Information
Part No
EL2001ACN
EL2001CM
EL2001CN
Temp Range
0 C to
a
75 C
0 C to
a
75 C
0 C to
a
75 C
Pkg
P-DIP
20-Lead SOL
P-DIP
Outline
MDP0031
MDP0027
MDP0031
2001 – 1
Top View
2001 – 2
Top View
Note Non-designated pins are no connects and are not electrically connected
internally
December 1995 Rev G
Manufactured under U S Patent No 4 833 424 4 827 223 U K Patent No
2217134
Note
All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication however this data sheet cannot be a ‘‘controlled document’’ Current revisions if any to these
specifications are maintained at the factory and are available upon your request We recommend checking the revision level before finalization of your design documentation
1989 Elantec Inc
EL2001C
Low Power 70 MHz Buffer Amplifier
Absolute Maximum Ratings
V
S
V
IN
I
IN
P
D
Supply Voltage (V
a b
V
b
)
Input Voltage (Note 1)
Input Current (Note 1)
Power Dissipation (Note 2)
Output Short Circuit
Duration (Note 3)
g
18V or 36V
g
15V or V
S
g
50 mA
See Curves
T
A
T
J
T
ST
Operating Temperature Range
EL2001AC EL2001C
Operating Junction Temperature
Storage Temperature
0 C to
a
75 C
150 C
b
65 C to
a
150 C
Continuous
Important Note
All parameters having Min Max specifications are guaranteed The Test Level column indicates the specific device testing actually
performed during production and Quality inspection Elantec performs most electrical tests using modern high-speed automatic test
equipment specifically the LTX77 Series system Unless otherwise noted all tests are pulsed tests therefore T
J
e
T
C
e
T
A
Test Level
I
II
III
IV
V
Test Procedure
100% production tested and QA sample tested per QA test plan QCX0002
100% production tested at T
A
e
25 C and QA sample tested at T
A
e
25 C
T
MAX
and T
MIN
per QA test plan QCX0002
QA sample tested per QA test plan QCX0002
Parameter is guaranteed (but not tested) by Design and Characterization Data
Parameter is typical value at T
A
e
25 C for information purposes only
Electrical Characteristics
V
S
e
g
15V
Parameter
Description
V
IN
V
OS
Offset Voltage
EL2001A EL2001AC
EL2001 EL2001C
0
I
IN
Input Current
EL2001A EL2001AC
EL2001 EL2001C
0
R
IN
Input Resistance
%
%
0
R
S
e
50X unless otherwise specified
Limits
Min
b
10
b
15
b
30
b
40
b
3
b
6
b
5
b
10
Test Conditions
Load
%
Temp
25 C
T
MIN
T
MAX
25 C
T
MIN
T
MAX
0
%
25 C
T
MIN
T
MAX
25 C
T
MIN
T
MAX
g
12V
EL2001AC
EL2001C
Max
I
a
15
Units
Typ
2
Test
Level
I
III
I
III
I
III
I
III
I
III
mV
mV
mV
mV
mA
mA
mA
TD is 2 5in
mA
MX
MX
2
a
30
a
40
1
a
3
a
6
1
a
5
a
10
100X
25
T
MIN
T
MAX
1
05
8
2
EL2001C
Low Power 70 MHz Buffer Amplifier
Electrical Characteristics
V
S
e
g
15V
Parameter
Description
V
in
A
V1
Voltage Gain
g
12V
R
S
e
50X unless otherwise specified
Limits
Min
0 990
0 985
0 83
0 80
0 82
0 79
g
10
g
9 5
g
11
Contd
EL2001AC
EL2001C
Max
Test
Level
I
III
V V
V V
V V
V V
V V
V V
V
V
X
X
mA
mA
mA
mA
dB
dB
TD is 4 2in
ns
ns
V
ms
Test Conditions
Load
%
Temp
25 C
T
MIN
T
MAX
A
V2
Voltage Gain
g
10V
Units
Typ
0 998
100X
25 C
T
MIN
T
MAX
0 93
I
III
A
V3
Voltage Gain
with V
S
e
g
5V
Output Voltage
Swing
Output Resistance
g
3V
100X
25 C
T
MIN
T
MAX
0 89
I
III
I
III
V
O
g
12V
100X
25 C
T
MIN
T
MAX
R
OUT
g
2V
100X
25 C
T
MIN
T
MAX
10
15
18
I
III
I
III
I
OUT
Output Current
g
12V
(Note 4)
25 C
T
MIN
T
MAX
g
100
g
95
g
160
I
S
Supply Current
0
%
25 C
T
MIN
T
MAX
13
20
25
I
III
I
III
PSRR
Supply Rejection
(Note 5)
Rise Time
Propagation Delay
Slew Rate (Note 6)
0
0 5V
0 5V
g
10V
%
25 C
T
MIN
T
MAX
60
50
75
t
r
t
d
SR
100X
100X
100X
25 C
25 C
25 C
1200
42
20
2000
V
V
IV
Note 1 If the input exceeds the ratings shown (or the supplies) or if the input to output voltage exceeds
g
7 5V then the input
current must be limited to
g
50 mA See the applications section for more information
Note 2 The maximum power dissipation depends on package type ambient temperature and heat sinking See the characteristic
curves for more details
Note 3 A heat sink is required to keep the junction temperature below the absolute maximum when the output is short circuited
