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EL5221CY-T7

Dual 12MHz Rail-to-Rail Input-Output Buffer

厂商名称:ELANTEC (Renesas )

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EL5221C
EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
Features
12MHz -3dB bandwidth
Unity gain buffer
Supply voltage = 4.5V to 16.5V
Low supply current (per buffer) =
500µA
• High slew rate = 10V/µs
• Rail-to-rail operation
General Description
The EL5221C is a dual, low power, high voltage rail-to-rail input-out-
put buffer. Operating on supplies ranging from 5V to 15V, while
consuming only 500µA per channel, the EL5221C has a bandwidth of
12MHz (-3dB). The EL5221C also provides rail-to-rail input and out-
put ability, giving the maximum dynamic range at any supply voltage.
The EL5221C also features fast slewing and settling times, as well as
a high output drive capability of 30mA (sink and source). These fea-
tures make the EL5221C ideal for use as voltage reference buffers in
Thin Film Transistor Liquid Crystal Displays (TFT-LCD). Other
applications include battery power, portable devices, and anywhere
low power consumption is important.
The EL5221C is available in space-saving SOT23-6 and MSOP-8
packages and operates over a temperature range of -40°C to +85°C.
Applications
TFT-LCD drive circuits
Electronics notebooks
Electronics games
Personal communication devices
Personal Digital Assistants (PDA)
Portable instrumentation
Wireless LANs
Office automation
Active filters
ADC/DAC buffer
Connection Diagrams
Ordering Information
Part No.
EL5221CW-T7
EL5221CW-T13
EL5221CY-T7
EL5221CY-T13
Package
SOT23-6
SOT23-6
MSOP-8
MSOP-8
Tape & Reel
7”
13”
7”
13”
Outline #
MDP0038
MDP0038
MDP0043
MDP0043
VINA 1
VS- 2
VINB 3
SOT23-6
6 VOUTA
5 VS+
4 VOUTB
VOUTA 1
NC 2
VINA 3
VS- 4
MSOP-8
8 VS+
November 7, 2000
7 VOUTB
6 NC
5 VINB
Note:
All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
© 2000 Elantec Semiconductor, Inc.
EL5221C
EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
Absolute Maximum Ratings
(T
A
= 25°C)
Values beyond absolute maximum ratings can cause the device to be pre-
maturely damaged. Absolute maximum ratings are stress ratings only and
functional device operation is not implied
+18V
Supply Voltage between V
S
+ and V
S
-
Input Voltage
V
S
- - 0.5V, V
S
+ +0.5V
Maximum Continuous Output Current
30mA
Maximum Die Temperature
Storage Temperature
Operating Temperature
Power Dissipation
ESD Voltage
+125°C
-65°C to +150°C
-40°C to +85°C
See Curves
2kV
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: T
J
= T
C
= T
A
Electrical Characteristics
V
S+
= +5V, V
S
- = -5V, R
L
= 10kΩ and C
L
= 10pF to 0V, T
A
= 25°C unless otherwise specified.
Parameter
Input Characteristics
V
OS
TCV
OS
I
B
R
IN
C
IN
A
V
V
OL
V
OH
I
SC
PSRR
I
S
SR
t
S
BW
CS
Input Offset Voltage
Average Offset Voltage Drift
Input Bias Current
Input Impedance
Input Capacitance
Voltage Gain
Output Swing Low
Output Swing High
Short Circuit Current
Power Supply Rejection Ratio
Supply Current (Per Buffer)
Slew Rate
[2]
Settling to +0.1%
-3dB Bandwidth
Channel Separation
-4.5V
V
OUT
4.5V
I
L
= -5mA
I
L
= 5mA
Short to GND
V
S
is moved from ±2.25V to ±7.75V
No Load
-4.0V
V
OUT
4.0V, 20% to 80%
V
O
=2V Step
R
L
= 10kΩ, C
L
= 10pF
f = 5MHz
7
60
4.85
0.995
-4.92
4.92
±120
80
500
10
500
12
75
750
V
CM
= 0V
[1]
Description
Condition
Min
Typ
2
5
2
1
1.35
Max
12
50
Unit
mV
µV/°C
nA
GΩ
pF
V
CM
= 0V
1.005
-4.85
V/V
V
V
mA
dB
µA
V/µs
ns
MHz
dB
Output Characteristics
Power Supply Performance
Dynamic Performance
1. Measured over the operating temperature range
2. Slew rate is measured on rising and falling edges
2
EL5221C
EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
Electrical Characteristics
V
S
+ = +5V, V
S
- = 0V, R
L
= 10kΩ and C
L
= 10pF to 2.5V, T
A
= 25°C unless otherwise specified.
Parameter
Input Characteristics
V
OS
TCV
OS
I
B
R
IN
C
IN
A
V
V
OL
V
OH
I
SC
PSRR
I
S
SR
t
S
BW
CS
Input Offset Voltage
Average Offset Voltage Drift
Input Bias Current
Input Impedance
Input Capacitance
Voltage Gain
Output Swing Low
Output Swing High
Short Circuit Current
Power Supply Rejection Ratio
Supply Current (Per Buffer)
Slew Rate
[2]
Settling to +0.1%
-3dB Bandwidth
Channel Separation
0.5
V
OUT
4.5V
I
L
= -5mA
I
L
= 5mA
Short to GND
V
S
is moved from 4.5V to 15.5V
No Load
1V
V
OUT
≤4V,
20% to 80%
V
O
= 2V Step
R
L
= 10 kΩ, C
L
= 10pF
f = 5MHz
7
60
4.85
0.995
80
4.92
±120
80
500
10
500
12
75
750
V
CM
= 2.5V
[1]
Description
Condition
Min
Typ
2
5
2
1
1.35
Max
10
50
Unit
mV
µV/°C
nA
GΩ
pF
V
CM
= 2.5V
1.005
150
V/V
mV
V
mA
dB
µA
V/µs
ns
MHz
dB
Output Characteristics
Power Supply Performance
Dynamic Performance
1. Measured over the operating temperature range
2. Slew rate is measured on rising and falling edges
3
EL5221C
EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
Electrical Characteristics
V
S
+ = +15V, V
S
- = 0V, R
L
= 10kΩ and C
L
= 10pF to 7.5V, T
A
= 25°C unless otherwise specified.
Parameter
Input Characteristics
V
OS
TCV
OS
I
B
R
IN
C
IN
A
V
V
OL
V
OH
I
SC
PSRR
I
S
SR
t
S
BW
CS
Input Offset Voltage
Average Offset Voltage Drift
Input Bias Current
Input Impedance
Input Capacitance
Voltage Gain
Output Swing Low
Output Swing High
Short Circuit Current
Power Supply Rejection Ratio
Supply Current (Per Buffer)
Slew Rate
[2]
Settling to +0.1%
-3dB Bandwidth
Channel Separation
0.5
V
OUT
14.5V
I
L
= -5mA
I
L
= 5mA
Short to GND
V
S
is moved from 4.5V to 15.5V
No Load
1V
V
OUT
≤14V,
20% to 80%
V
O
= 2V Step
R
L
= 10 kΩ, C
L
= 10pF
f = 5MHz
7
60
14.85
0.995
80
14.92
±120
80
500
10
500
12
75
750
V
CM
= 7.5V
[1]
Description
Condition
Min
Typ
2
5
2
1
1.35
Max
14
50
Unit
mV
µV/°C
nA
GΩ
pF
V
CM
= 7.5V
1.005
150
V/V
mV
V
mA
dB
µA
V/µs
ns
MHz
dB
Output Characteristics
Power Supply Performance
Dynamic Performance
1. Measured over the operating temperature range
2. Slew rate is measured on rising and falling edges
4
EL5221C
EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
Typical Performance Curves
Input Offset Voltage Distribution
2000
V
S
=±5V
T
A
=25°C
1600
Quantity (Buffers)
Typical
Production
Distribution
Quantity (Buffers)
35
30
25
1200
20
15
10
400
5
0
1
3
5
7
9
11
13
15
17
-12
-10
10
12
Input Offset Voltage (mV)
Input Offset Voltage, TCVOS (µ V/°C)
19
150
150
-8
-6
-4
-2
0
2
4
6
8
V
S
=±5V
T
A
=25°C
Typical
Production
Distribution
Input Offset Voltage Drift
800
0
Input Offset Voltage vs Temperature
10
4
Input Bias Current vs Temperature
Input Offset Voltage (mV)
5
0
Input Bias Current (nA)
V
S
=±5V
2
V
S
=±5V
0
-5
-2
-10
-50
0
50
Temperature (°C)
100
150
-4
-50
0
50
Temperature (°C)
100
Output High Voltage vs Temperature
4.97
-4.91
-4.92
Output High Voltage (V)
Output Low Voltage (V)
4.96
V
S
=±5V
I
OUT
=5mA
-4.93
-4.94
-4.95
-4.96
4.93
-50
Output Low Voltage vs Temperature
V
S
=±5V
I
OUT
=-5mA
4.95
4.94
0
50
Temperature (°C)
100
150
-4.97
-50
0
50
Temperature (°C)
100
5
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参数对比
与EL5221CY-T7相近的元器件有:EL5221C。描述及对比如下:
型号 EL5221CY-T7 EL5221C
描述 Dual 12MHz Rail-to-Rail Input-Output Buffer Dual 12MHz Rail-to-Rail Input-Output Buffer
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